Optimization of Carrier Distributions in Periodic Gain Structures toward Blue VCSELs

2014 ◽  
Vol 1736 ◽  
Author(s):  
Kenjo Matsui ◽  
Kosuke Horikawa ◽  
Yugo Kozuka ◽  
Kazuki Ikeyama ◽  
Daisuke Komori ◽  
...  
Keyword(s):  
Emission Intensity ◽  
Intermediate Layer ◽  
Intensity Ratio ◽  
Active Regions ◽  
Cavity Surface ◽  
Carrier Injection ◽  
Vertical Cavity Surface ◽  
The Difference ◽  
Emitting Lasers ◽  
Emission Intensity Ratio

ABSTRACTWe have fabricated light emitting diodes (LEDs) in which two active regions separated with a Mg-doped GaN intermediate layer were placed in a single pn junction toward periodic gain structures (PGS) for blue vertical-cavity surface emitting lasers (VCSELs). By current density dependence on a emission intensity ratio from two different active regions, we obtained a very stable emission intensity ratio over 1 kA/cm2. This result is also confirmed with the simulation result. Furthermore, we found that the difference of emission wavelength affect the carrier injection and the emission intensity ratio. On the basis of this result, the optimized well-balanced Mg concentration in the intermediate layer for the two identical active regions were estimated approximately 5 x 1018 cm-3.

(GaIn)(NAsSb): MBE GROWTH, HETEROSTRUCTURE AND NANOPHOTONIC DEVICES

2007 ◽  
Vol 06 (03n04) ◽  
pp. 269-274
Author(s):  
JAMES S. HARRIS
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
High Speed ◽  
Active Regions ◽  
Phase Segregation ◽  
Plasma Source ◽  
Cavity Surface ◽  
Dilute Nitride ◽  
Vertical Cavity Surface ◽  
Emitting Lasers

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers, and high power Raman pump lasers that will be required in the networks to provide high speed communications to the desktop. Because these quantum well active regions can be grown on GaAs , the distributed mirror technology for vertical cavity surface emitting lasers coupling into waveguides and fibers and photonic crystal structures can be readily combined with GaInNAsSb active regions to produce a variety of advanced photonic devices that will be crucial for advanced photonic integrated circuits. GaInNAs ( Sb ) provides several new challenges compared to earlier III–V alloys because of the limited solubility of N , phase segregation, nonradiative defects caused by the low growth temperature, and ion damage from the N plasma source. This paper describes progress in overcoming some of the material challenges and progress in realizing record setting edge emitting lasers, the first VCSELs operating at 1.5 μm based on GaInNAsSb and integrated photonic crystal and nanoaperture lasers.

scholarly journals Исследование аномальной генерации вертикально-излучающих лазеров спектрального диапазона 850 nm с двойной оксидной токовой апертурой при большой величине спектральной расстройки

2020 ◽  
Vol 128 (8) ◽  
pp. 1151
Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
Н.А. Малеев ◽  
А.Г. Кузьменков ◽  
В.М. Устинов
Keyword(s):  
Quantum Wells ◽  
Anomalous Behavior ◽  
Higher Order ◽  
Cavity Surface ◽  
Carrier Injection ◽  
Transverse Modes ◽  
Higher Order Modes ◽  
Wide Range ◽  
Vertical Cavity Surface ◽  
Emitting Lasers

The static characteristics of 850 nm-range vertical-cavity surface-emitting lasers (VCSEL) based on strained InGaAs/AlGaAs quantum wells were studied in the wide range of oxide current aperture sizes and the origins of their anomalous behavior at large gain-to-cavity detuning was analyzed. The higher-order modes localized at the periphery of the oxide current aperture can appear in the studied VCSELs due to the lateral carrier spreading in the quantum wells and the specific profile of the oxide aperture (leading to the formation of a two-stage effective waveguide). Inhomogeneous carrier injection over the current aperture area in wide-aperture lasers leads anomalous start of lasing via high-order transverse modes, and the subsequent transition to the classical lasing via low-order modes with an increase in the current is due to a change of the gain-to-cavity detuning with an increase in the internal laser temperature. Anomalous lasing via higher-order modes in the case of narrow-aperture VCSELs becomes possible due to the increase in diffraction losses at the edge of the oxide current aperture for the fundamental mode, while the subsequent switching to the two-mode lasing is due to not only a decrease in the gain-to-cavity detuning, but also the thermal lens effect.

scholarly journals Влияние параметров короткопериодной сверхрешетки InGaAs/InGaAlAs на эффективность фотолюминесценции

2020 ◽  
Vol 46 (22) ◽  
pp. 27
Author(s):  
С.С. Рочас ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
Е.С. Колодезный ◽  
А.В. Бабичев ◽  
...  
Keyword(s):  
Active Regions ◽  
Cavity Surface ◽  
X Ray Diffraction ◽  
Barrier Layer Thickness ◽  
Inp Substrate ◽  
Short Period ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

The results of the study of heterostructures based on short-period InGaAs/InGaAlAs superlattices fabricated by molecular beam epitaxy on an InP substrate with the aim of using them as active regions for vertical-cavity surface emitting lasers of the 1.3 μm spectral range are studied. Photoluminescence and X-ray diffraction studies of the fabricated heterostructures are carried out. It was shown that a change in the ratio of the quantum well thickness and the barrier layer thickness of the superlattice allows one to controllably shift the position of the photoluminescence peak and to provide the heterostructure parameters necessary to achieve lasing at a wavelength of 1.3 μm, while the photoluminescence efficiency remains practically unchanged.

EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 979-1005
Author(s):  
D. G. DEPPE ◽  
D. L. HUFFAKER
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Three Dimensional ◽  
Active Regions ◽  
Cavity Surface ◽  
Novel Device ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Gaas Quantum Dot ◽  
Vertical Cavity

An important advance in InGaAs/GaAs quantum dot lasers has been the demonstration of lasing at wavelengths significantly longer than that possible using InGaAs strained quantum wells, extending beyond 1.3 μm. These fully GaAs-based active regions are compatible with commercial vertical-cavity surface-emitting laser (VCSEL) technology based on selective oxidation, and offer novel performance due to their three-dimensional electronic confinement. This chapter reviews the status of long wavelength quantum dot edge-emitting lasers and VCSELs, and presents some of the new physical principles needed to understand their novel device characteristics.

Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

1996 ◽  
Vol 421 ◽  
Author(s):  
D.I. Babic ◽  
V. Jayaraman ◽  
N. M. Margalit ◽  
K. Streubel ◽  
M.E. Heimbuch ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Active Regions ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Lattice Matched

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

scholarly journals Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

1998 ◽  
Vol 3 ◽  
Author(s):  
Pawe ,Ma kowiak ◽  
W ,odzimierz Nakwaski
Keyword(s):  
Active Region ◽  
Active Regions ◽  
Optimal Number ◽  
Cavity Surface ◽  
Optical Losses ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Scattering Losses

A detailed threshold analysis of room-temperature pulsed operation of GaN/AlGaN/AlN vertical-cavity surface-emitting lasers (VCSELs) is carried out. The model takes advantage of the latest results concerning gain in active regions, material absorption in the cladding layers, as well as cavity diffraction and scattering losses. The simulation showed that although VCSELs with single (S) or multiple (M) quantum-well (QW) active regions exhibit lower threshold currents, they are much more sensitive to any increase in optical losses than their bulk counterparts. In particular, decreasing the active region radius of gain-guided QW VCSELs below 5 μm (which increases diffraction losses) or increasing dislocation densities (which, in turn, raises scattering losses) gives an enormous rise to their threshold currents. Therefore small-size GaN VCSELs should have an index-guided structure. In the case of MQW VCSELs, the optimal number of quantum wells strongly depends on the reflectivities of resonator mirrors. According to our study, MQW GaN lasers usually require noticeably lower threshold currents compared to SQW lasers. The optimal number of QW active layers is lower in laser structures exhibiting lower optical losses. Although the best result occurred for an active region thickness of 4 nm, threshold currents for the various sizes differ insignificantly.

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