X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC

2015 ◽  
Vol 1741 ◽  
Author(s):  
H. Wang ◽  
M. Dudley ◽  
J. Zhang ◽  
B. Thomas ◽  
G. Chung ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Strain Relaxation ◽  
Lattice Parameter ◽  
Relaxation Processes ◽  
Radial Temperature ◽  
X Ray ◽  
Before And After ◽  
Half Loop ◽  
Mismatch Stress ◽  
Epilayer Surface

ABSTRACTA review is presented of Synchrotron X-ray Topography and KOH etching studies carried out on n type 4H-SiC offcut substrates before and after homo-epitaxial growth to study defect replication and strain relaxation processes and identify the nucleation sources of both interfacial dislocations (IDs) and half-loop arrays (HLAs) which are known to have a deleterious effect on device performance. We show that these types of defects can nucleate during epilayer growth from: (1) short segments of edge oriented basal plane dislocations (BPDs) in the substrate which are drawn by glide into the epilayer; and (2) segments of half loops of BPD that are attached to the substrate surface prior to growth which also glide into the epilayer. It is shown that the initial motion of the short edge oriented BPD segments that are drawn from the substrate into the epilayer is caused by thermal stress resulting from radial temperature gradients experienced by the wafer whilst in the epi-chamber. This same stress also causes the initial glide of the surface half-loop into the epilayer and through the advancing epilayer surface. These mobile BPD segments provide screw oriented segments that pierce the advancing epilayer surface that initially replicate as the crystal grows. Once critical thickness is reached, according to the Mathews-Blakeslee model [1], these screw segments glide sideways under the action of the mismatch stress leaving IDs and HLAs in their wake. The origin of the mismatch stress is shown to be associated with lattice parameter differences at the growth temperature, arising from the differences in doping concentration between substrate and epilayer.

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 319-322
Author(s):  
H. Wang ◽  
F. Wu ◽  
Yu Yang ◽  
J.Q. Guo ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Chemical Vapor ◽  
Growth Surface ◽  
Radial Temperature ◽  
Short Edge ◽  
Before And After ◽  
Basal Plane Dislocation ◽  
Half Loop ◽  
Homoepitaxial Layers ◽  
Epilayer Surface

Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition (CVD) has been studied using Synchrotron X-ray Topography and KOH etching. Studies carried out before and after epilayer growth have revealed that, in some cases, short, edge oriented segments of basal plane dislocation (BPD) inside the substrate can be drawn towards the interface producing screw oriented segments intersecting the growth surface. In other cases, BPD half-loops attached to the substrate surface are forced to glide into the epilayer producing similar screw oriented surface intersections. It is shown that the initial motion of the short edge oriented BPD segments that are drawn from the substrate into the epilayer is caused by thermal stress resulting from radial temperature gradients experienced by the wafer whilst in the epi-chamber. This same stress also causes the initial glide of the surface half-loop into the epilayer and through the advancing epilayer surface. These mobile BPD segments provide screw oriented segments that pierce the advancing epilayer surface that initially replicate as the crystal grows. Once critical thickness is reached, according to the Mathews-Blakeslee model, these screw segments glide sideways under the action of the mismatch stress leaving IDs and HLAs in their wake.

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

Epitaxial tilt of partially relaxed InGaAs layers grown on (100) GaAs substrates

1992 ◽  
Vol 70 (10-11) ◽  
pp. 838-842
Author(s):  
P. Maigné ◽  
A. P. Roth ◽  
C. Desruisseaux ◽  
D. Coulas
Keyword(s):  
Residual Strain ◽  
Gaas Substrate ◽  
Strain Relaxation ◽  
Azimuthal Angle ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Mismatch Strain ◽  
Gaas Substrates

The structural properties of partially relaxed InxGa1−xAs layers grown on (100) GaAs substrates have been investigated, using high-resolution X-ray diffraction, in order to better understand the mechanisms responsible for the relaxation of the mismatch strain. From symmetric [400] reflections recorded as functions of the azimuthal angle [Formula: see text], the (100) InGaAs planes are found to be tilted with respect to the (100) GaAs substrate planes. The tilt magnitude is first seen to decrease then to increase with layer thickness. The direction of the tilt changes from [01-1] to [00-1] in the range of thickness investigated. From [422] asymmetric reflections, the average in-plane lattice parameter, the indium composition as well as the percentage of relaxation can be measured. Our values for relaxation are in qualitative agreement with the Dodson and Tsao model of strain relaxation (Appl. Phys. Lett. 51, 1710 (1987)). In addition, our data show an anisotropy in residual strain along <011> directions. This anisotropy increases with the amount of strain relieved and changes the crystal symmetry of the cell from tetragonal to monoclinic. This monoclinic symmetry can be characterized by an angle β that measures the angle between 90° and the inner angles of the new crystallographic cell. As for the anisotropy in residual strain, |3 increases with the amount of strain relieved. Correlations between tilt magnitude and tilt direction with the formation of 60° type dislocations are discussed.

scholarly journals Quantification of the strain-relaxation processes in silicon nanowire arrays using combined X-ray diffraction analyses

2019 ◽  
Vol 75 (a2) ◽  
pp. e653-e653
Author(s):  
Cosmin Romanitan ◽  
Mihaela Kusko ◽  
Marian Popescu ◽  
Pericle Varasteanu ◽  
Antonio Radoi ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Strain Relaxation ◽  
Nanowire Arrays ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Nanowire Arrays

Misfit dislocations between boron-doped homoepitaxial films and diamond substrates studied by X-ray diffraction topography

2018 ◽  
Vol 51 (6) ◽  
pp. 1684-1690 ◽  
Author(s):  
Marina González-Mañas ◽  
Beatriz Vallejo
Keyword(s):  
Critical Thickness ◽  
Lattice Mismatch ◽  
Lattice Parameter ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Slip Planes ◽  
Half Loop

Boron-doped diamond epilayers grown over diamond substrates have a different lattice parameter from the undoped diamond substrate, which introduces a lattice mismatch between substrates and epilayers. This can generate misfit dislocations at the interface when the epilayer reaches a certain critical thickness. For a boron concentration of about 1 × 1020 atoms cm−3, the calculated lattice mismatch is about 1.3 × 10−4 and the critical thickness is of the order of 0.2 µm. In the epilayers studied, grown over high-pressure high-temperature 1b (001) substrates, the lattice mismatch and the epilayer thickness are 1.3 × 10−4, 30 µm and 6.5 × 10−4, 4 µm. The epitaxial strain has been relaxed by the generation of two orthogonal misfit dislocation systems. These are edge dislocations parallel to the [100] and [010] directions with a Burgers vector making an angle of 45° with the (001) interface. Their lengths are 40–60 µm and their lineal densities 200–240 cm−1. They are heterogeneously nucleated, propagated in the form of half-loops along the slip planes (011) and (101), respectively, and related mainly to 〈111〉 threading dislocations emerging from octahedral growth sectors. Another kind of half-loop originates from the substrate growth sector boundaries. Limited X-ray topography has been demonstrated to be a very useful tool to discriminate between substrate and epilayer defects when their lattice mismatch is not sufficient to separate such defects in conventional Lang topography. X-ray section topography has confirmed the presence of [001] dislocations in the epilayers and the misfit half-loops related to threading dislocations propagating from the interface.

Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

scholarly journals The dependence between the structural-morphological features mixes 0.8SiO2/0.2Al2O3 from the time of mechanicall treatment

2021 ◽  
Vol 22 (3) ◽  
pp. 516-521
Author(s):  
Yu.V. Yavorsky' ◽  
Ya.V. Zaulichny ◽  
M.V. Karpets ◽  
A.I. Dudka ◽  
A.B. Hrubiak ◽  
...  
Keyword(s):  
Mechanical Treatment ◽  
Structural Parameters ◽  
Coherent Scattering ◽  
Lattice Parameter ◽  
Morphological Features ◽  
Sem Images ◽  
X Ray ◽  
Before And After ◽  
Perfect Mixing ◽  
The Relationship

This paper highlights the relationship between changes in structural and morphological features, electronic structure and exanging of time mechanical treatment at microbraker (MBT). Scaning electron microscopy revealed a change in the morphological features of nanoscale powders. From the comparison of SEM images of 0.8SiO2/0.2Al2О3 mixture before and after MBT, it is established that due to MBT, the agglomerates of the initial components are simultaneously crushed with perfect mixing particles of oxides between each other and the formation of new agglomerates with a denser structure. The increase in processing time leads to an increase in the density of the nanocomposite. The effect of time of mechanical treatment  on the structural parameters and phase composition of mixtures of silicon dioxide and titanium were studied using the method of X-ray structural analysis. The established agglomeration is accompanied by a change in the lattice parameter c with a change in the regions of coherent scattering of crystalline Al2О3. Ultra-soft X-ray emission spectroscopy was used to study the distribution of Op-, Sisd- and Alsd- valence electrons in 0.8SiO2/0.2Al2О3 powder mixtures after the different time of mechanicall treatment. An increase in atomic charges has been measured and can be explained by the transfer of electrons from Si and Al to O atoms in split Opπ-binding states.

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by High Temperature Annealing of 4H-SiC Epilayers

2012 ◽  
Vol 1433 ◽  
Author(s):  
Xuan Zhang ◽  
Hidekazu Tsuchida
Keyword(s):  
High Temperature ◽  
Basal Plane ◽  
Image Force ◽  
Line Tension ◽  
Grazing Incidence ◽  
High Temperature Annealing ◽  
X Ray ◽  
Before And After ◽  
Edge Dislocations ◽  
Epilayer Surface

ABSTRACTConversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) has been observed in 4H-SiC epilayers by simple high temperature annealing. Grazing incidence reflection synchrotron X-ray topography was used to image the dislocations in the epilayers. By comparing the X-ray topographs before and after annealing, some of the BPDs were confirmed to convert to TEDs from the epilayer surface. The dislocation behaviors during annealing are explained and the mechanism of BPD conversion is discussed. It is argued that the conversion process is realized by constricted BPD segments cross-slipping to the prismatic plane driven by the image force and TED glide on its slip plane driven by the line tension. Certain kinetic processes may assist the formation of constrictions on the BPDs.

Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

2016 ◽  
Vol 858 ◽  
pp. 297-300 ◽  
Author(s):  
O.Y. Goue ◽  
Yu Yang ◽  
J.Q. Guo ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Carrier Lifetime ◽  
Substrate Surface ◽  
Stacking Faults ◽  
High Density ◽  
Structural Defects ◽  
Middle Region ◽  
X Ray ◽  
Half Loop ◽  
Interfacial Dislocations

Lifetime maps for two 4H-SiC epi-wafers (samples 1 and 2) were recorded using microwave photoconductive decay (μPCD) measurements and correlated with the type and distribution of structural defects mapped by synchrotron X-ray topography (white beam and monochromatic). Sample 1 showed lower lifetime inside one of its higher doped facet regions and along its edges. The low lifetime in the facet region was associated with the presence of a high density of multi-layered Shockley stacking faults (SFs) and low angle grain boundaries (LAGBs). These stacking faults are likely double Shockley stacking faults (DSSFs) and probably nucleated from scratches present on the substrate surface and LAGBs present in that region, propagating during epilayer growth. In contrast, sample 2 showed a reduced carrier lifetime in the middle region associated with a network of interfacial dislocations (IDs) and half loop arrays (HLAs) originating from 3C inclusions that are generated during epilayer growth. Along the edges of both samples, overlapping triangular defects, microcracks and BPD loops lowered lifetime.

Anomalous X-Ray Scattering On Self-Assembled Islands: Direct Evaluation Of Composition Profile, Strain Relaxation, And Elastic Energy

2002 ◽  
Vol 737 ◽  
Author(s):  
A. Malachias ◽  
R. Magalhães-Paniago ◽  
G. Medeiros-Ribeiro ◽  
S. Kycia ◽  
T.I. Kamins ◽  
...  
Keyword(s):  
Elastic Energy ◽  
Strain Relaxation ◽  
Lattice Parameter ◽  
Direct Evaluation ◽  
X Ray ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Temperature Rate ◽  
Ray Scattering

ABSTRACTThe growth of Ge on Si(001) produces a wealth of morphologies of nanocrystals. After the deposition of a two-dimensional Ge film 3.5 monolayers thick, islands are formed, and several shape transitions can be observed depending on the growth temperature, rate and deposited thickness. In this work we combine atomic force microscopy and two different types of measurements of anomalous x-ray scattering to determine this elastic energy both in pyramid and dome shaped islands. By comparing pyramids and domes data, we have observed both an increase of lattice parameter and enhancement of interdiffusion for the domes. These results show that there is a drastic decrease of the elastic energy stored per atom upon this particular shape transition.

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