Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices

2006 ◽  
Vol 912 ◽  
Author(s):  
Benjamin Dumont ◽  
Arnaud Pouydebasque ◽  
Bartek Pawlak ◽  
Benjamin Oudet ◽  
Dominique Delille ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Short Channel Effect ◽  
Drive Current ◽  
Enhanced Diffusion ◽  
Channel Effect ◽  
Interstitial Defects ◽  
Shallow Junctions ◽  
Channel Effects ◽  
Large Improvement

AbstractThis work demonstrates the efficiency of a Germanium and Carbon co-implantation that suppresses the Boron Transient Enhanced Diffusion, enhances Boron activation and enables large improvement of Short Channel Effects in PMOS devices while maintaining drive current performances. We present here 65/45nm node devices on conventional bulk substrates featuring Germanium and Carbon engineered shallow junctions that enable to reduce the Drain Induced Barrier Lowering compared to devices implanted only with Boron. This improvement is attributed to the suppression of Boron channelling with Ge pre-amorphization (PAI), and to the reduction of Boron TED due to the trapping of interstitial defects by Carbon with Germanium PAI.

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 613-616
Author(s):  
Tomoyasu Ishii ◽  
Shinichiro Kuroki ◽  
Hiroshi Sezaki ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Threshold Voltage ◽  
High Frequency ◽  
Short Channel Effects ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Channel Effects ◽  
Trench Structure ◽  
High Frequency Operation

Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.

Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

2000 ◽  
Vol 640 ◽  
Author(s):  
A. Konstantinov ◽  
A-M. Saroukhan ◽  
S. Karlsson ◽  
C. Harris ◽  
A. Litwin
Keyword(s):  
Silicon Carbide ◽  
The Other ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Short Channel Effect ◽  
Turn On ◽  
Channel Effect ◽  
Blocking Voltage ◽  
Channel Effects

ABSTRACTWe demonstrate that the performance of silicon carbide MESFETs is largely determined by short-channel effects. Parasitic bipolar transistor turn-on limits the operation voltage to a small fraction of the theoretically expected value for an ideal device. Tradeoffs are shown to exist between optimum gate length and on-state current on one hand, and the maximum blocking voltage on the other hand. Composite p-buffers with an elevated doping in the vicinity of the active layer considerably increase the operation voltage. Silicon carbide MESFETs utilizing composite buffers are reported.

Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

1999 ◽  
Vol 568 ◽  
Author(s):  
M.E. Rubin ◽  
S. Saha ◽  
J. Lutze ◽  
F. Nouri ◽  
G. Scott ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Recombination Rate ◽  
Gate Oxide ◽  
Two Dimensional ◽  
Short Channel ◽  
Short Channel Effect ◽  
Mos Capacitor ◽  
Enhanced Diffusion ◽  
Channel Effect ◽  
Additional Nitrogen

ABSTRACTExperiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.

Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

2002 ◽  
Vol 49 (1) ◽  
pp. 55-60 ◽  
Author(s):  
T. Matsumoto ◽  
S. Maeda ◽  
Y. Hirano ◽  
K. Eikyu ◽  
Y. Yamaguchi ◽  
...  
Keyword(s):  
Floating Body ◽  
Short Channel ◽  
Short Channel Effect ◽  
Drive Current ◽  
Channel Effect ◽  
Floating Body Effects

scholarly journals Design and characterization of a 10 nm finfet

2019 ◽  
Vol 15 (4) ◽  
pp. 609-612
Author(s):  
Kim Ho Yeap ◽  
Jun Yi Lee ◽  
Wei Long Yeo ◽  
Humaira Nisar ◽  
Siu Hong Loh
Keyword(s):  
Leakage Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Drive Current ◽  
Design Specifications ◽  
Transfer Characteristics ◽  
Channel Effects ◽  
Output Characteristics

This paper presents the design, characterization, and analysis of a 10 nm silicon negative channel FinFET. To validate the design, we have simulated the output characteristics and transfer characteristics of the transistor. Both of which comply with the standard characteristics of an operational MOSFET. Owing to its efficacy in suppressing short channel effects, the leakage current of the tri-gate transistor is found to be low; whereas, the drive current is sufficiently high. We have also presented the design specifications of the transistor.

Arsenic deactivation enhanced diffusion and the reverse short-channel effect

1997 ◽  
Vol 18 (2) ◽  
pp. 42-44 ◽  
Author(s):  
P.M. Rousseau ◽  
S.W. Crowder ◽  
P.B. Griffin ◽  
J.D. Plummer
Keyword(s):  
Short Channel ◽  
Short Channel Effect ◽  
Enhanced Diffusion ◽  
Channel Effect
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