scholarly journals Design and characterization of a 10 nm finfet

2019 ◽  
Vol 15 (4) ◽  
pp. 609-612
Author(s):  
Kim Ho Yeap ◽  
Jun Yi Lee ◽  
Wei Long Yeo ◽  
Humaira Nisar ◽  
Siu Hong Loh
Keyword(s):  
Leakage Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Drive Current ◽  
Design Specifications ◽  
Transfer Characteristics ◽  
Channel Effects ◽  
Output Characteristics

This paper presents the design, characterization, and analysis of a 10 nm silicon negative channel FinFET. To validate the design, we have simulated the output characteristics and transfer characteristics of the transistor. Both of which comply with the standard characteristics of an operational MOSFET. Owing to its efficacy in suppressing short channel effects, the leakage current of the tri-gate transistor is found to be low; whereas, the drive current is sufficiently high. We have also presented the design specifications of the transistor.

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices

2006 ◽  
Vol 912 ◽  
Author(s):  
Benjamin Dumont ◽  
Arnaud Pouydebasque ◽  
Bartek Pawlak ◽  
Benjamin Oudet ◽  
Dominique Delille ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Short Channel Effect ◽  
Drive Current ◽  
Enhanced Diffusion ◽  
Channel Effect ◽  
Interstitial Defects ◽  
Shallow Junctions ◽  
Channel Effects ◽  
Large Improvement

AbstractThis work demonstrates the efficiency of a Germanium and Carbon co-implantation that suppresses the Boron Transient Enhanced Diffusion, enhances Boron activation and enables large improvement of Short Channel Effects in PMOS devices while maintaining drive current performances. We present here 65/45nm node devices on conventional bulk substrates featuring Germanium and Carbon engineered shallow junctions that enable to reduce the Drain Induced Barrier Lowering compared to devices implanted only with Boron. This improvement is attributed to the suppression of Boron channelling with Ge pre-amorphization (PAI), and to the reduction of Boron TED due to the trapping of interstitial defects by Carbon with Germanium PAI.

scholarly journals Design and software characterization of finFET based full adders

2019 ◽  
Vol 8 (1) ◽  
pp. 51
Author(s):  
Raju Hajare ◽  
C. Lakshminarayana
Keyword(s):  
Field Effect Transistors ◽  
Full Adder ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Switching Speed ◽  
Chip Area ◽  
Channel Effects ◽  
Technology Nodes

Adder is the most important arithmetic block that are used in all processors. Most of the logical circuits till today were designed using Metal Oxide Semiconductor Field Effect Transistors (MOSFET’s). In order to reduce chip area, leakage power and to increase switching speed, MOSFET’s were continuously scaled down. Further scaling below 45nm, MOSFET’s suffers from Short Channel Effects (SCE’s) which leads to degraded performance of the device. Here the Performance of 28T and 16T MOSFET based 1-bit full adder cell is characterized and compared with FinFET based 28T and 16T 1-bit full adders at various  technology nodes using HSPICE software. Results show that FinFET based full adder design gives better performance in terms of speed, power and reliability compared to MOSFET based full adder designs. Hence FinFET are promising candidates and better replacement for MOSFET.

Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

2007 ◽  
Vol 17 (01) ◽  
pp. 49-53 ◽  
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. P. Chow
Keyword(s):  
Leakage Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Enhancement Mode ◽  
Sapphire Substrates ◽  
Channel Effects

In this paper, we have fabricated and compared the performance of lateral enhancement-mode GaN MOSFETs with linear and circular geometries. Circular MOSFETs show 2 to 4 orders of magnitude lower leakage current than that of linear MOSFETs. We also studied short channel behaviors and found that they are similar to those previously reported Si MOSFET.

Characterization of Sub 130 Nanometer Gate Length SOI MOSFET Devices Exhibiting Short Channel Effects

2003 ◽  
Author(s):  
Terence Kane ◽  
Michael P. Tenney ◽  
John Bruley
Keyword(s):  
Electrical Characterization ◽  
Short Channel Effects ◽  
Line Edge Roughness ◽  
Short Channel ◽  
Critical Dimensions ◽  
Technology Roadmap ◽  
Transmission Electron ◽  
Edge Roughness ◽  
Channel Effects

Abstract As MOSFET device gate lengths shrink below the 130 nanometer node, the effects of short channel effects (SCE) and gate line edge roughness (LER) have an increasingly more pronounced affect on device performance [1-8, 10]. The 2001 International Technology Roadmap for Semiconductors (ITRS) predicts increasingly tighter critical dimensions (CD) control limits on LER from 2.7 nm in 2004 to 1.3 nm in 2010 [9,11]. As gate lengths shrink, resist etch processes emerge as the most significant contributor to LER [1-8, 11]. In addition, another contributing factor to SCE is junction implant defects. Examples of gate LER effects and junction defects in 130 nanometer node SOI SRAM MOSFET devices identified by sub-micron electrical characterization with analysis by high resolution transmission electron microscopy (TEM) are discussed.

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