Electron Emission Mechanism of Doped CVD Diamond Characterized Using Combined XPS/UPS/FES System

2006 ◽  
Vol 956 ◽  
Author(s):  
Hisato Yamaguchi ◽  
Ichitaro Saito ◽  
Yuki Kudo ◽  
Tomoaki Masuzawa ◽  
Takatoshi Yamada ◽  
...  
Keyword(s):  
Electron Emission ◽  
Anode Voltage ◽  
Natural Diamond ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Threshold Field ◽  
Emission Mechanism ◽  
Chemical Vapor Deposited ◽  
Low Threshold ◽  
Successful Observation

ABSTRACTElectric field of less than 5 V/μm is enough to extract electrons from diamond, whereas field of one to two orders of magnitude higher is needed to extract electrons from metal emitter tips. Despite such low-threshold field, the difficulty in clarification of electron emission mechanism is the factor preventing diamond from being used in a practical use. Quite a few numbers of possible mechanisms were proposed to better understand the origin and properties of the observed emission. Most of these mechanisms were, however, based on the conventional I (Emission current)-V (Anode voltage) characteristics. Energy distribution of the field-emitted electrons is essential in direct clarification of the mechanism. In this study, combined XPS/UPS/FES system was used to characterize the electron emission mechanism of doped chemical vapor deposited (CVD) diamond. The results indicated successful observation of the origin of field-emitted electrons from doped CVD diamond comparison with natural diamond, used as a reference.

Fabrication of Planar Diamond Electron Emitters for Flat Panel Displays

1999 ◽  
Vol 558 ◽  
Author(s):  
H. Kawamura ◽  
S. Kato ◽  
T. Maki ◽  
T. Kobayashi
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Driving Voltage ◽  
Effective Work ◽  
Chemical Vapor Deposited ◽  
Low Threshold ◽  
Electron Emitters ◽  
Planar Electron

ABSTRACTA planar electron emitter was fabricated employing chemical vapor deposited (CVD) diamond thin films. This device is composed of CVD diamond films selectively deposited on a pair of patterned Au/Cr films separated 2 micrometers from each other. When the driving voltage (Vd) was applied between the Au/Cr films, the extremely low threshold emission from diamond film was observed (Vd ∼ 10 V). Furthermore, by applying high voltage on anode screen placed above this device, part of emitted current was drawn to the anode and the luminescence from phosphors was clearly seen under Vd = 50V. The mechanism of electron emission from the diamond films used in this device was also discussed by comparing with the electron emission from isolated diamond particles. It was found that the effective work functions differ between the isolated particles and the continuous films. This result suggests a difference in the emission site of electrons.

Electron emission mechanism of diamond characterized by combined XPS/UPS/FES

2005 ◽  
Vol 891 ◽  
Author(s):  
Hisato Yamaguchi ◽  
Takatoshi Yamada ◽  
Bradford B. Pate ◽  
Masato Kudo ◽  
Yuji Takakuwa ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electron Emission ◽  
Anode Voltage ◽  
Negative Electron Affinity ◽  
Band Diagram ◽  
Emission Mechanism ◽  
High Chemical ◽  
Mechanical Hardness ◽  
Low Threshold ◽  
High Chemical Stability

ABSTRACTDiamond has various advantages as an electron emitter in addition to the low-threshold voltage, negative electron affinity (NEA), high thermal conductivity, high mechanical hardness, and high chemical stability. The difficulty in clarification of electron emission mechanism is preventing diamond from being used in the practical use. It is extremely difficult to identify the surface potential of the emitting diamond from conventional Emission current (I)- Anode voltage (V) characteristics. If one could measure the potential of the emitting surface, the band diagram of emitting diamond can be completed. The combined spectroscopy of XPS/UPS/FES specially built for this study, is one of the most powerful tool, which could identify the potential of the emitting surface. In this study, we have succeeded in observing the origin of field-emitted electrons using our combined XPS/UPS/FES system.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Thermal conductivity and the microstructure of state-of-the-art chemical-vapor-deposited (CVD) diamond

1993 ◽  
Vol 2 (5-7) ◽  
pp. 1059-1063 ◽  
Author(s):  
J.E. Graebner ◽  
S. Jin ◽  
G.W. Kammlott ◽  
Y.-H. Wong ◽  
J.A. Herb ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
State Of The Art ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Chemical Vapor Deposited

Electron emission from chemical vapor deposited diamond and dielectric breakdown

1994 ◽  
Vol 65 (7) ◽  
pp. 863-865 ◽  
Author(s):  
Joseph D. Shovlin ◽  
Martin E. Kordesch
Keyword(s):  
Electron Emission ◽  
Dielectric Breakdown ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Growth of Large-Scale Praseodymium Hexaborides (PrB6) Nanowires and Enhanced Field-Emission Performance

2020 ◽  
Vol 15 (2) ◽  
pp. 276-283 ◽  
Author(s):  
Junqi Xu ◽  
Yanrui Wang ◽  
Wenjie Wang ◽  
Zijun Xu ◽  
Yonglei Jia ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Large Scale ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
Field Electron Emission ◽  
Threshold Field ◽  
Analytical Instruments ◽  
Field Electron ◽  
Pressure Chemical

Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.

Electrical Properties in Cvd Diamond Films

1993 ◽  
Vol 302 ◽  
Author(s):  
S. Zhao ◽  
K.K. Gan ◽  
H. Kagan ◽  
R. Kass ◽  
R. Malchow ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Average Distance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Time Resolved ◽  
Chemical Vapor Deposited ◽  
Natural Type ◽  
Cvd Diamond Film

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

Hydrogen and Hydrogen-Related Defects in CVD Diamond

1998 ◽  
Vol 513 ◽  
Author(s):  
K. M. McNamara Rutledge
Keyword(s):  
Magnetic Resonance ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Active Hydrogen ◽  
Paramagnetic Resonance ◽  
Hydrogen Incorporation ◽  
Chemical Vapor Deposited ◽  
Optical Applications ◽  
Electron Paramagnetic ◽  
Non Destructive

ABSTRACTHydrogen is a detrimental impurity in many chemical vapor deposited (CVD) materials, particularly those involved in electronic or optical applications. For example, active hydrogen defects have been observed in materials such as silicon, Si, gallium arsenide, GaAs, and diamond, C, thin films. Hydrogen and its related defects can be identified, quantified, and observed using magnetic resonance techniques. These techniques allow a unique quantitative, non-destructive view of hydrogen in the solid-state. Nuclear magnetic resonance (NMR) is used to study hydrogenated defects directly, while electron paramagnetic resonance (EPR) is used to observe hydrogen associated with paramagnetic defects. These observations can enhance our understanding of the effects of hydrogen incorporation on the properties of such materials.

Electron Emission Properties of Si Field Emitter Arrays Coated With Nanocrystalline Diamond From Fullerene Precursors

1997 ◽  
Vol 498 ◽  
Author(s):  
T. G. McCauley ◽  
T. D. Corrigan ◽  
A. R. Krauss ◽  
O. Auciello ◽  
D. Zhou ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Threshold Field ◽  
Field Emitter ◽  
Effective Work ◽  
Field Emitter Arrays ◽  
Electron Field

ABSTRACTIn this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C60) and methane (CH4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/μm, with effective work functions as low as 0.59 eV.

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