Fabrication of Planar Diamond Electron Emitters for Flat Panel Displays

1999 ◽  
Vol 558 ◽  
Author(s):  
H. Kawamura ◽  
S. Kato ◽  
T. Maki ◽  
T. Kobayashi
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Driving Voltage ◽  
Effective Work ◽  
Chemical Vapor Deposited ◽  
Low Threshold ◽  
Electron Emitters ◽  
Planar Electron

ABSTRACTA planar electron emitter was fabricated employing chemical vapor deposited (CVD) diamond thin films. This device is composed of CVD diamond films selectively deposited on a pair of patterned Au/Cr films separated 2 micrometers from each other. When the driving voltage (Vd) was applied between the Au/Cr films, the extremely low threshold emission from diamond film was observed (Vd ∼ 10 V). Furthermore, by applying high voltage on anode screen placed above this device, part of emitted current was drawn to the anode and the luminescence from phosphors was clearly seen under Vd = 50V. The mechanism of electron emission from the diamond films used in this device was also discussed by comparing with the electron emission from isolated diamond particles. It was found that the effective work functions differ between the isolated particles and the continuous films. This result suggests a difference in the emission site of electrons.

Electron Emission Mechanism of Doped CVD Diamond Characterized Using Combined XPS/UPS/FES System

2006 ◽  
Vol 956 ◽  
Author(s):  
Hisato Yamaguchi ◽  
Ichitaro Saito ◽  
Yuki Kudo ◽  
Tomoaki Masuzawa ◽  
Takatoshi Yamada ◽  
...  
Keyword(s):  
Electron Emission ◽  
Anode Voltage ◽  
Natural Diamond ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Threshold Field ◽  
Emission Mechanism ◽  
Chemical Vapor Deposited ◽  
Low Threshold ◽  
Successful Observation

ABSTRACTElectric field of less than 5 V/μm is enough to extract electrons from diamond, whereas field of one to two orders of magnitude higher is needed to extract electrons from metal emitter tips. Despite such low-threshold field, the difficulty in clarification of electron emission mechanism is the factor preventing diamond from being used in a practical use. Quite a few numbers of possible mechanisms were proposed to better understand the origin and properties of the observed emission. Most of these mechanisms were, however, based on the conventional I (Emission current)-V (Anode voltage) characteristics. Energy distribution of the field-emitted electrons is essential in direct clarification of the mechanism. In this study, combined XPS/UPS/FES system was used to characterize the electron emission mechanism of doped chemical vapor deposited (CVD) diamond. The results indicated successful observation of the origin of field-emitted electrons from doped CVD diamond comparison with natural diamond, used as a reference.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Electrical Properties in Cvd Diamond Films

1993 ◽  
Vol 302 ◽  
Author(s):  
S. Zhao ◽  
K.K. Gan ◽  
H. Kagan ◽  
R. Kass ◽  
R. Malchow ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Average Distance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Time Resolved ◽  
Chemical Vapor Deposited ◽  
Natural Type ◽  
Cvd Diamond Film

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

Influence of the deposition conditions on the elastic properties of chemical vapor deposited (CVD) diamond films studied by laser ultrasonics

1999 ◽  
Vol 105 (2) ◽  
pp. 1229-1229
Author(s):  
Kris Van de Rostyne ◽  
Christ Glorieux ◽  
Weimin Gao ◽  
Walter Lauriks ◽  
Jan Thoen ◽  
...  
Keyword(s):  
Elastic Properties ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Laser Ultrasonics ◽  
Chemical Vapor Deposited ◽  
Deposition Conditions

Stable secondary electron emission from chemical vapor deposited diamond films coated with alkali‐halides

1995 ◽  
Vol 66 (2) ◽  
pp. 242-244 ◽  
Author(s):  
G. T. Mearini ◽  
I. L. Krainsky ◽  
J. A. Dayton ◽  
Yaxin Wang ◽  
Christian A. Zorman ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Alkali Halides ◽  
Chemical Vapor Deposited

Band gap structure and electron emission property of chemical-vapor-deposited diamond films

2001 ◽  
Vol 45 (6) ◽  
pp. 915-919 ◽  
Author(s):  
J.J Liu ◽  
D.Y.T Chiu ◽  
D.C Morton ◽  
D.H Kang ◽  
V.V Zhirnov ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Emission Property ◽  
Chemical Vapor Deposited ◽  
Band Gap Structure ◽  
Gap Structure

Observation of a non Fowler–Nordheim field-induced electron emission phenomenon from chemical vapor deposited diamond films

1999 ◽  
Vol 75 (9) ◽  
pp. 1323-1325 ◽  
Author(s):  
J. Chen ◽  
S. Z. Deng ◽  
N. S. Xu ◽  
K. H. Wu ◽  
E. G. Wang
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

TEM cathodoluminescence of chemical vapor deposited diamond

1990 ◽  
Vol 48 (4) ◽  
pp. 620-621
Author(s):  
R.J. Graham ◽  
Mark M. Disko ◽  
T.D. Moustakas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Tungsten Filament ◽  
Electronic Information ◽  
Wear Resistant Coatings ◽  
Chemical Vapor Deposited ◽  
Potential Applications

Diamond films grown by chemical vapor deposition (CVD) are curently of great interest with potential applications in semiconductors and as wear resistant coatings. In order to understand and optimize the growth and properties of these films, it is necessary to characterize their microstructure. While such techniques as TEM and cathodoluminescence (CL) (in a SEM) can be used independently to provide microstructural and optical/electronic information respectively, the direct correlation of these two pieces of information is highly desirable. This is possible using the TEM CL technique (CL in a TEM) because the electron transparent specimen allows a direct comparison of CL with microstructure. The preliminary results obtained for CVD diamond films by this technique are presented here.The films examined were grown on a silicon (100) substrate by filament assisted CVD from a mixture of methane (2% vol.) and hydrogen at a pressure of 30 torr, using a tungsten filament operated at 1800°C.

Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission device

1995 ◽  
Vol 10 (7) ◽  
pp. 1585-1588 ◽  
Author(s):  
Z. Feng ◽  
I.G. Brown ◽  
J.W. Ager
Keyword(s):  
Field Strength ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Electron Emission ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Chemical Vapor Deposited ◽  
Emission Device

Electron emission from chemical vapor deposited (CVD) diamond and amorphous carbon (a-C) films was observed with a simple field emission device (FED). Both diamond and a-C films were prepared with microwave plasma-enhanced CVD techniques. Electron emission in the ficld strength range + 10 to −10 MVm−1 was studied, and the field emission source was confirmed by a diode characteristic of the I-V curve, a straight line in the Fowler-Nordheim (F-N) plot, and direct observation of light emission from a fluorescent screen. The turn-on field strength was ∼5 MVm−1, which was similar for both kinds of carbon films. The highest current density for diamond films, observed at a field strength of 10 MVm−1, was ∼15 μA cm−2. Diamond films yielded a higher emission current than a-C films. The reasons for the observed field emission are discussed.

Sign in / Sign up

Export Citation Format

Share Document