Orientation Control of Standing Epitaxial Pentacene Monolayers Using Surface Steps and In-plane Band Dispersion Analysis by Angle Resolved Photoelectron Spectroscopy

2006 ◽  
Vol 965 ◽  
Author(s):  
Tadamasa Suzuki ◽  
Toshihiro Shimada ◽  
Keiji Ueno ◽  
Susumu Ikeda ◽  
Koichiro Saiki ◽  
...  

ABSTRACTWe prepared quasi single crystalline pentacene monolayer films on Bi-terminated Si(111) by using bunched steps on vicinally-cut surfaces as an orientation template. Band dispersion in the conduction plane of pentacene was clearly observed by angle-resolved photoelectron spectroscopy.

2021 ◽  
Vol 548 ◽  
pp. 149295
Author(s):  
Ashraful G. Bhuiyan ◽  
Taiji Terai ◽  
Tomohiro Katsuzaki ◽  
Naoki Takeda ◽  
Akihiro Hashimoto

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.


2007 ◽  
Vol 22 (7) ◽  
pp. 1921-1926 ◽  
Author(s):  
Jifa Tian ◽  
Fei Liu ◽  
Chengmin Shen ◽  
Huairuo Zhang ◽  
Tianzhong Yang ◽  
...  

Large-area single-crystalline vanadium dioxide nanoflakes were first fabricated via a thermal reduction method in a tube furnace. The sample was characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The results show that VO2 nanoflakes are single-crystalline with a monoclinic structure. The VO2 nanoflakes have a width of 200–300 nm, a thickness of 50–100 nm, and a length up to 1–2 μm. It is found that single-crystalline VO2 nanoflakes show a novel and complicated 5–7-step Li-storage behavior for an insertion amount of <0.6 mol lithium per mol of VO2.


2007 ◽  
Vol 467 (1-2) ◽  
pp. 43-50 ◽  
Author(s):  
Chikako Sakai ◽  
Fumihiko Matsui ◽  
Nobuaki Takahashi ◽  
Sakura Nishino Takeda ◽  
Hiroshi Daimon

2002 ◽  
Vol 17 (8) ◽  
pp. 1914-1922 ◽  
Author(s):  
S. M. Lee ◽  
T. Ito ◽  
H. Murakami

The morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723 K by means of electron beam evaporation using a MgO powder source. Atomic force microscopy images indicated that the film grown at RT without O2 supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without O2 has the composition closest to that of the stoichiometric MgO and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively.These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.


1988 ◽  
Vol 3 (3) ◽  
pp. 506-513 ◽  
Author(s):  
J. Halbritter

Angle-resolved x-ray photoelectron spectroscopy (ARXPS) results in a very detailed analysis of minor amounts (≥0.3 nm) of interface compounds and their spatial distribution. First experimental results on the Si–SiO2 interface used in microelectronics, are presented. The ARXPS results on plane, single crystalline (100) Si, oxidized to about 5 nm SiO2, indicate a planar Si surface connected by about one monolayer Si∗ to a compressed SiO∗2 layer coated by SiO2. Separated from this interface region, Si clusters stabilized by a compressing SiO∗2 coating have been found in SiO2. Dehydrogenation is showing up in binding energy changes in SiO2 indicating that H or OH is not only saturating Si∗ but is also bonded to SiO2. The O deficiency of amorphous SiO2,x is increasing toward the outer SiO2 surface.


2009 ◽  
Vol 79-82 ◽  
pp. 759-762 ◽  
Author(s):  
Zhen Guo Song ◽  
Feng Ji ◽  
Jin Ma ◽  
Ti Ning ◽  
Xu An Pei ◽  
...  

1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscopy showed the existence of non-stoichiometric oxide on the film surface. The Hall mobility and carrier concentration of the SnO2:In films varied with the In content increasing.


2005 ◽  
Vol 865 ◽  
Author(s):  
Ralf Hunger ◽  
Christian Pettenkofer

AbstractClean and ordered chalcopyrite CuInSe2 surfaces are a precondition for the study of the electronic structure by angle-resolved photoelectron spectroscopy. The preparation of welldefined CuInSe2(001) surfaces by the combination of molecular beam epitaxy and a selenium capping and decapping process is described. The surface structure of CuInSe2 epilayers with different bulk composition is compared and analysed by low-energy electron diffraction.Employing near-stoichiometric surfaces, the valence electronic structure of CuInSe2 was investigated by angle-resolved photoelectron spectroscopy at the synchrotron source BESSY 2. This is the first study of the valence band structure of a copper chalcopyrite semiconductor material by photoelectron spectroscopy. The valence band dispersion along τT, i.e. the [001] direction, was investigated by a variation of the excitation energy from 10 to 35 eV under normal emission, and the band dispersion along τT, i.e. the [110] direction, was analysed by angular scans with hv = 13 eV.The valence bands derived from antibonding and bonding Se4p-Cu3d hybrid orbitals, nonbonding Cu3d states and In-Se hybrid states are clearly indentified. The strongest dispersion is found for the topmost valence band with a bandwidth of ∼0.7 eV from τ to T. From τ to N, the observed dispersion was 0.5 eV. The experimental valence bands are discussed in relation to calculated band structures in the literature.


2002 ◽  
Vol 734 ◽  
Author(s):  
Daisuke Yoshimura ◽  
Takayuki Miyamae ◽  
Sinji Hasegawa ◽  
Yukinobu Hosoi ◽  
Yoko Sakurai ◽  
...  

ABSTRACTWe report on the recent progress of our continued effort for the preparation and characterization of well oriented films of tetratetracontane (n-C44H90) and perfluorotetracosane (n-C24F50), which are good model molecules of fundamental polymers, polyethylene (CH2)n and poly(tetrafluoroethylen) (CF2)n, vacuum-deposited on metal surfaces. When the surface of the metal substrate was oxidized, the deposited chain molecules are aligned with their molecular axes vertically standing on the surface, while they lie flat on the surface when atomically clean Cu(100) surface was used. In the case of n-C44H90 on Cu (100), low-energy electron diffraction (LEED) studies revealed that the molecules were also azimuthally aligned with the chain axis almost parallel with the <100> and <010> axis, and infrared reflection-absorption spectroscopy (IR-RAS) enabled detailed studies of the film structure at increasing film thickness._By applying the technique of angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) to these flat-lying molecules, the intramolecular energy-band dispersion relation could be determined, The results agreed well with the results deduced from the previous work using vertically standing molecules assuming an inner potential V0. of –5 eV, confirming the validity of the estimation of V0. Excellent agreement was found between the observed and simulated spectra using the independent-atomic-center (IAC) approximation. Also the value of the vacuum level shift by molecular deposition was deduced for TTC/Cu(100) system to be – 0.3 eV. As for n-C24F50, the E(k) relation deduced in our previous study using vertically standing molecules showed discrepancy with band calculations. The detailed reexamination of the experimental data using IAC calculations for the previous report gave more realistic estimation of V0, and the newly deduced E(k) relation using this data showed good correspondence with theoretical band calculations, thus removing the difficulty in the previous work.


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