Band structure investigation of chalcopyrite CuInSe2(001) by angle-resolved photoelectron spectroscopy

2005 ◽  
Vol 865 ◽  
Author(s):  
Ralf Hunger ◽  
Christian Pettenkofer
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Bulk Composition ◽  
Synchrotron Source ◽  
Band Dispersion ◽  
Low Energy Electron ◽  
Copper Chalcopyrite ◽  
Valence Bands

AbstractClean and ordered chalcopyrite CuInSe2 surfaces are a precondition for the study of the electronic structure by angle-resolved photoelectron spectroscopy. The preparation of welldefined CuInSe2(001) surfaces by the combination of molecular beam epitaxy and a selenium capping and decapping process is described. The surface structure of CuInSe2 epilayers with different bulk composition is compared and analysed by low-energy electron diffraction.Employing near-stoichiometric surfaces, the valence electronic structure of CuInSe2 was investigated by angle-resolved photoelectron spectroscopy at the synchrotron source BESSY 2. This is the first study of the valence band structure of a copper chalcopyrite semiconductor material by photoelectron spectroscopy. The valence band dispersion along τT, i.e. the [001] direction, was investigated by a variation of the excitation energy from 10 to 35 eV under normal emission, and the band dispersion along τT, i.e. the [110] direction, was analysed by angular scans with hv = 13 eV.The valence bands derived from antibonding and bonding Se4p-Cu3d hybrid orbitals, nonbonding Cu3d states and In-Se hybrid states are clearly indentified. The strongest dispersion is found for the topmost valence band with a bandwidth of ∼0.7 eV from τ to T. From τ to N, the observed dispersion was 0.5 eV. The experimental valence bands are discussed in relation to calculated band structures in the literature.

scholarly journals Photoemission Spectroscopy of Single Crystal HTSC Materials: A Fermi Liquid Electronic Structure

1989 ◽  
Vol 156 ◽  
Author(s):  
A. J. Arko ◽  
R. S. List ◽  
R. J. Bartlett ◽  
S. W. Cheong ◽  
C. G. Olson ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Single Crystal ◽  
Fermi Liquid ◽  
Wide Band ◽  
Photoemission Spectroscopy ◽  
Correlation Effects ◽  
Band Dispersion ◽  
Valence Bands ◽  
Orbital Character

ABSTRACTPhotoemission spectra from HTSC materials ( primarily 123 -type ), cleaved and measured at 20K, reveal a rich DOS structure which compares favorably with a calculated band structure, except for a residual 0.5 eV shift which may reflect some correlation effects. Band dispersion is observed throughout the valence bands, with clear evidence for a 0.2 eV wide band dispersing through EF. The orbital character at EF is a mix of Cu-3d and O-2p. There is unambiguous evidence for a large BCS-like gap (2Δ≥ 4kTc).

The Valence Electronic Structure of Co3O4: Is It a Charge-Transfer Insulator?

1998 ◽  
Vol 547 ◽  
Author(s):  
M.A. Langell ◽  
G.A. Carson ◽  
S. Smith ◽  
L. Peng ◽  
M.H. Nassir
Keyword(s):  
Electronic Structure ◽  
Charge Transfer ◽  
Band Structure ◽  
Valence Band ◽  
Transition Metal Oxides ◽  
Resolution Electron ◽  
Bonding Properties ◽  
Low Energy Electron ◽  
A Charge ◽  
Electron Energy Loss

AbstractDespite the relevance to a variety of materials applications, the electronic and bonding properties of spinel transition metal oxides are not well established. We report here the slow oxidation of CoO(100) to Co3O4, studied by photoemission (UPS and XPS), low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS) with the aim of elucidating the valence band electronic structure of the Co3O4 spinel. The original Mott insulator picture of the parent CoO substrate has been revised in recent times, after careful analyses and extensive debate, to the more detailed charge-transfer insulator model which includes some admixture of oxygen 2p levels in the 3d-derived valence band. No equivalent band structure analysis has been performed on the spinel oxides, perhaps in part because of the greater complexity of the 56-atom unit cell with two different cation lattice sites and oxidation states. In this study, we determine the valence band structure of the spinel oxide and address the question of whether Co3O4 can be modeled as a charge-transfer insulator in analogy with its closely related rocksalt substrate.

scholarly journals Determination of the valence band edge of Fe oxide nanoparticles dispersed in aqueous solution through resonant photoelectron spectroscopy from a liquid microjet

2021 ◽  
Author(s):  
Giorgia Olivieri ◽  
Gregor Kladnik ◽  
Dean Cvetko ◽  
Matthew A. Brown
Keyword(s):  
Aqueous Solution ◽  
Electronic Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Edge ◽  
Photoemission Spectroscopy ◽  
Oxide Nanoparticles ◽  
Valence Band Edge ◽  
Resonant Photoemission

The electronic structure of hydrated nanoparticles can be unveiled by coupling a liquid microjet with a resonant photoemission spectroscopy.

Electronic structure of Ni and Pd alloys. I. X-ray photoelectron spectroscopy of the valence bands

1983 ◽  
Vol 27 (4) ◽  
pp. 2145-2178 ◽  
Author(s):  
John C. Fuggle ◽  
F. Ulrich Hillebrecht ◽  
R. Zeller ◽  
Zygmunt Zołnierek ◽  
Peter A. Bennett ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Valence Bands

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

scholarly journals Valence-band electronic structure of iron phthalocyanine: An experimental and theoretical photoelectron spectroscopy study

2011 ◽  
Vol 134 (7) ◽  
pp. 074312 ◽  
Author(s):  
Barbara Brena ◽  
Carla Puglia ◽  
Monica de Simone ◽  
Marcello Coreno ◽  
Kartick Tarafder ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Iron Phthalocyanine ◽  
Spectroscopy Study

Electronic Structure and Surface Science of delta Plutonium

2003 ◽  
Vol 802 ◽  
Author(s):  
M. Butterfield ◽  
T. Durakiewicz ◽  
E. Guziewicz ◽  
J. J. Joyce ◽  
D. P. Moore ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Laser Ablation ◽  
High Resolution ◽  
Valence Band ◽  
Surface Science ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Instrument Resolution ◽  
Δ Phase

AbstractHigh resolution photoelectron spectroscopy (PES) studies were conducted on a δ-phase Plutonium sample cleaned by laser ablation and gas dosed with O2 and H2. The measurements were made with an instrument resolution of 60 meV and with the sample at 77 K. The PES data strongly support a model with Pu2O3 growth on the metal and then PuO2 growth on the Pu2O3 layer at this temperature. In vacuum, the PuO2 reduces to Pu2O3 at room temperature with a pressure of 6×10−11 Torr. In the case of H2 dosing the hydrogen appears to penetrate the surface and disrupt the valence band as evidenced by a drop in intensity of the peak at EF which is not accompanied by a drop in the main 5f manifold at ∼2eV.

Valence-band structure of the polar ZnO surfaces studied by angle-resolved photoelectron spectroscopy

2009 ◽  
Vol 79 (7) ◽  
Author(s):  
K. Ozawa ◽  
Y. Oba ◽  
K. Edamoto ◽  
M. Higashiguchi ◽  
Y. Miura ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Valence Band Structure

A STUDY ON STRAIN AFFECTING ELECTRONIC STRUCTURE OF WURTZITE ZnO BY FIRST PRINCIPLES

2009 ◽  
Vol 23 (19) ◽  
pp. 2339-2352 ◽  
Author(s):  
LI BIN SHI ◽  
SHUANG CHENG ◽  
RONG BING LI ◽  
LI KANG ◽  
JIAN WEI JIN ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Band Structure ◽  
Valence Band ◽  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Functional Theory ◽  
Electron Density Difference ◽  
Different Strains

Density of states and band structure of wurtzite ZnO are calculated by the CASTEP program based on density functional theory and plane-wave pseudopotential method. The calculations are carried out in axial and unaxial strains, respectively. The results of density of states in different strains show that the bottom of the conduction band is always dominated by Zn 4s, and the top of valence band is always dominated by O 2p. The variation of the band gap calculated from band structure is also discussed. In addition, p-d repulsion is used in investigating the variation of the top of the valence band in different strains and the results can be verified by electron density difference.

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