A Low Temperature Photonic Crystal Technology for Integration with Modern CMOS Technologies

2007 ◽  
Vol 990 ◽  
Author(s):  
Khadijeh Bayat ◽  
Mahdi Farrokh Baroughi ◽  
Sujeet K. Chaudhuri ◽  
Safieddin Safavi-Naeini
Keyword(s):  
Photonic Crystal ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Gas Phase ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Refractive Indices ◽  
Optical Integrated Circuits ◽  
Silicon Based

ABSTRACTIn this paper, low temperature amorphous silicon oxynitride (a-SixOyNz:H) thin film technology is proposed for implementation of CMOS compatible photonic crystal (PC) based optical integrated circuits (OICs). The a-SixOyNz films of different refractive indices were developed by plasma enhanced chemical vapor deposition (PECVD) technique using silane, nitrous oxide, and ammonia as gas phase precursors at 300°C. The films with refractive index between 1.43 − 1.75 were obtained by changing gas flow ratios. Such thin films can be used as cladding and core layers in photonic crystal structure.The bandgap and guiding properties of the a-SixOyNz based PCs were simulated and was shown that the a-SixOyNz:H based PC technology offers larger feature sizes than a conventional silicon based photonic crystals.

Multimode-Interference-Based Waveguide Crossing in Two-Dimensional Cubic Photonic Crystal

2013 ◽  
Vol 284-287 ◽  
pp. 2876-2879
Author(s):  
Yih Bin Lin ◽  
Jen Hao Cheng ◽  
Rei Shin Chen ◽  
Ting Chung Yu ◽  
Ju Feng Liu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Expansion Method ◽  
Transmission Efficiency ◽  
Multimode Interference ◽  
Plane Wave Expansion Method ◽  
Modal Dispersion ◽  
Optical Integrated Circuits ◽  
Difference Time ◽  
Novel Design

A novel design of photonic crystal waveguide crossing based on multimode-interference (MMI) structure is proposed. Two structures of difference device lengths are simulated and studied. The proposed structures have high transmission efficiency for a wide bandwidth. The crosstalk is -26dB with device length of 12 lattice periods and -39dB with device length of 24 lattice periods. The plane wave expansion method and finite-difference time-domain method are used to calculate the modal dispersion curve and field propagation, respectively. The proposed MMI-based waveguide crossing has the potential to be practical in high-density optical integrated circuits.

2D Square-lattice Photonic Crystal Based on Circular-ring Cylinders and Thin Cross Plates Suitable for Optical Integrated Circuits

2015 ◽  
Vol 44 (4) ◽  
pp. 423002
Author(s):  
王晶晶 WANG Jing-jing ◽  
欧阳征标 OUYANG Zheng-biao ◽  
文国华 WEN Guo-hua ◽  
黄浩 HUANG Hao ◽  
林密 LIN Mi ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Circular Ring ◽  
Square Lattice ◽  
Optical Integrated Circuits

scholarly journals Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source

2018 ◽  
Vol 8 (9) ◽  
pp. 1552 ◽  
Author(s):  
Youngsoo Kim ◽  
Young Lee ◽  
Seokhyeon Hong ◽  
Kihwan Moon ◽  
Soon-Hong Kwon
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Quality Factor ◽  
Wavelength Region ◽  
High Quality Factor ◽  
Silica Layer ◽  
High Quality ◽  
Light Emitting ◽  
Telecommunication Wavelength ◽  
Silicon Based

The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits. We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source. We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be embedded as gain materials. The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.01 μm3, while the resonance has a wavelength of 1537 nm. We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region.

scholarly journals All-Optical Ultra-Fast Graphene-Photonic Crystal Switch

Crystals ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 461 ◽  
Author(s):  
Mohammad Reza Jalali Azizpour ◽  
Mohammad Soroosh ◽  
Narges Dalvand ◽  
Yousef Seifi-Kavian
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Contrast Ratio ◽  
Fast Response ◽  
High Contrast ◽  
Switching Operation ◽  
Optical Integrated Circuits ◽  
All Optical ◽  
The Difference ◽  
Silicon Rods

In this paper, an all-optical photonic crystal-based switch containing a graphene resonant ring has been presented. The structure has been composed of 15 × 15 silicon rods for a fundamental lattice. Then, a resonant ring including 9 thick silicon rods and 24 graphene-SiO2 rods was placed between two waveguides. The thick rods with a radius of 0.41a in the form of a 3 × 3 lattice were placed at the center of the ring. Graphene-SiO2 rods with a radius of 0.2a were assumed around the thick rods. These rods were made of the graphene monolayers which were separated by SiO2 disks. The size of the structure was about 70 µm2 that was more compact than other works. Furthermore, the rise and fall times were obtained by 0.3 ps and 0.4 ps, respectively, which were less than other reports. Besides, the amount of the contrast ratio (the difference between the margin values for logics 1 and 0) for the proposed structure was calculated by about 82%. The correct switching operation, compactness, and ultra-fast response, as well as the high contrast ratio, make the presented switch for optical integrated circuits.

scholarly journals High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Barrier Structure ◽  
Organic Light Emitting Diode

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

MRS Advances ◽  
2016 ◽  
Vol 2 (29) ◽  
pp. 1533-1538 ◽  
Author(s):  
S. Ishihara ◽  
Y. Hibino ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Film Formation ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Axis Orientation

ABSTRACTMolybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

Dépôt chimique en phase vapeur et à basse pression de couches minces à base de silicium dans un réacteur à lampes halogène

2000 ◽  
Vol 77 (9) ◽  
pp. 737-743
Author(s):  
B Semmache ◽  
S Kallel ◽  
H El Omari ◽  
M Lemiti ◽  
A Laugier
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Environmental Safety ◽  
Device Fabrication ◽  
Process Time ◽  
Halogen Lamp ◽  
New Device ◽  
Si Films ◽  
Silicon Based

Low-pressure chemical vapor deposition (LPCVD) in halogen lamp-heated reactor (RTLPCVD: rapid thermal LPCVD) is a promising technique for silicon-based thin films deposition. Indeed, overall process time and gas consumption reduction in RTP reactors allows to project new device fabrication technologies (microsensors, solar cells) in order to reach a higher environmental safety with respect to classical technologies.Various gases available on our RTP installation (SiH4, NH3, N2O, O2, PH3, B2H6) enable several silicon-based thin films RTLPCVD deposition: intrinsic polycrystalline silicon (poly-Si) films or in situ doped poly-Si, silicon nitride (Si-N) and oxynitride (Si-O-N). In this paper, we discuss our results on deposition kinetics and physical properties of these thin films. It appeared that RTLPCVD silicon-based thin films with interesting structural, electrical, and optical properties can be synthesized in our lamp-heated reactor with a tight control of process parameters such as temperature, pressure, and gas flow ratios.

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