Electron-Beam Induced Growth of Silica Nanowires and Silica/Carbon Heterostructures

2007 ◽  
Vol 1017 ◽  
Author(s):  
Francisco Solá ◽  
Oscar Resto ◽  
Azlin M Biaggi-Labiosa ◽  
Luis F Fonseca
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Real Time ◽  
Electric Fields ◽  
Growth Process ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Electron Dose ◽  
Novel Synthesis ◽  
Silica Nanowires

AbstractA novel synthesis of silica nanowires and silica/carbon heterostructures by electron beam irradiation on porous silicon films was investigated. The method allows us to monitor the growth process in real time at atomic scales. Depending on the electron dose we obtain nanowires with diameters in the range of 15-49nm and lengths up to 500 nm. We found that the adequate electron dose was between 0.01 Acm-2 and 2 Acm-2. Additional electron dose causes plastic and failure deformations in the silica nanowires. A growth model consistent with our findings is presented that involves the flow of mass from the substrate to the nanowire driven by the local electric fields. Heterostructures showing a nanopalm-like shape are obtained after exposing the silica nanowire to poor vacuum conditions in which carbon aggregation from the surrounding gas is promoted by the local electric fields enhanced at the tip of the silica wires.

Electron beam irradiation of porous silicon for application in micromachining and sensing

2005 ◽  
Vol 202 (8) ◽  
pp. 1648-1652 ◽  
Author(s):  
S. Borini ◽  
M. Rocchia ◽  
A. M. Rossi ◽  
L. Boarino ◽  
G. Amato
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Electron-beam irradiation of porous silicon: Application to micromachining

2003 ◽  
Vol 93 (8) ◽  
pp. 4439-4441 ◽  
Author(s):  
Stefano Borini ◽  
Giampiero Amato ◽  
Massimiliano Rocchia ◽  
Luca Boarino ◽  
Andrea Mario Rossi
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

scholarly journals Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molybdenum Disulfide ◽  
Field Emission ◽  
Electric Fields ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Back Gate

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.

In Situ Optical Observation and Control of Initial Stages of GaAs Growth On Caf2 Surface Modified by Electron Beam Irradiation

1996 ◽  
Vol 448 ◽  
Author(s):  
K. Kawasaki ◽  
K. Tsutsui
Keyword(s):  
Surface Modification ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
In Situ Observation ◽  
Initial Growth ◽  
Beam Irradiation ◽  
Electron Dose ◽  
Surface Modified ◽  
And Control

AbstractWe investigated the electron beam induced surface modification of CaF2(1 11) and initial stage of GaAs growth on the modified CaF2 surface by means of the surface photoabsorption technique and atomic force microscopy (AFM). The CaF2 surface was modified by 300 eV electron beam irradiation at 200°C in a As4 molecular beam. The amount of adsorbed As atoms increased with electron dose and it follows Langmuir adsorption principle and saturated at a value equivalent to I monolayer adsorption. In situ observation of GaAs growth on this modified surface clarified that the sticking coefficient of GaAs on CaF2 surface was drastically improved by the surface modification. AFM observation revealed that the surface roughness of initial growth of GaAs on modified CaF2 was improved at the growth temperature of 550°C

scholarly journals Elucidating the real-time Ag nanoparticle growth on α-Ag2WO4during electron beam irradiation: experimental evidence and theoretical insights

2015 ◽  
Vol 17 (7) ◽  
pp. 5352-5359 ◽  
Author(s):  
Wyllamanney da Silva Pereira ◽  
Juan Andrés ◽  
Lourdes Gracia ◽  
Miguel A. San-Miguel ◽  
Edison Z. da Silva ◽  
...  
Keyword(s):  
Electron Beam ◽  
Experimental Evidence ◽  
Real Time ◽  
Electron Beam Irradiation ◽  
Atomic Scale ◽  
Ag Nanoparticle ◽  
Beam Irradiation ◽  
The Real ◽  
Nanoparticle Growth

The nucleation of Ag on α-Ag2WO4is investigated at atomic-scale by TEM and FE-SEM techniques. Ag-3 and Ag-4 centers of the (100) sub-surface are the most favorable to diffuse to form metallic Ag.

Electron beam irradiation of n‐type porous silicon obtained by photoelectrochemical etching

1995 ◽  
Vol 66 (13) ◽  
pp. 1665-1667 ◽  
Author(s):  
J.‐L. Maurice ◽  
A. Rivière ◽  
A. Alapini ◽  
C. Lévy‐Clément
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Photoelectrochemical Etching

scholarly journals Effect of Electron Beam Irradiation on Polymers

2018 ◽  
Vol 5 (1) ◽  
pp. 24-33 ◽  
Author(s):  
Pradeep Singh ◽  
B R Venugopal ◽  
D R Nandini
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Electron Dose ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Depth Analysis ◽  
The Stability ◽  
Electron Energy Loss

Electron energy loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM) is widely used for chemical state analysis of variety of chemical compounds. High beam sensitivity of substances like polymers hinders the possibility of exploring in-depth analysis provided through the high spatially resolved EELS spectroscopy. In this study, the electron beam irradiation damage on polymers were analyzed with varying dose of electron beams. The stability of the polymers under electron beam exposure depends on the chemical structure on the polymers. In this study the polymers with and without phenyl groups namely Polycarbonate, Polyethylene terephthalate, Polystyrene, Styrene Maleic Anhydride and Polymethylmethacrylate are selected for the comparative degradation study. Effect of varying the electron dose on the stability of polymers were monitored by recording the low-loss EELS spectrum in π to π* transition and (π+σ) to (π+σ)* transition region.

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