The Real-Time Gas Mass Filter System for the Analysis of Products from Trichloroethylene-Air Mixture during Electron Beam Irradiation

2001 ◽  
Vol 34 (10) ◽  
pp. 1300-1308 ◽  
Author(s):  
TERUYUKI HAKODA ◽  
HIDEHIKO ARAI ◽  
SHOJI HASHIMOTO
Keyword(s):  
Electron Beam ◽  
Real Time ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Mass Filter ◽  
The Real ◽  
Filter System

scholarly journals Elucidating the real-time Ag nanoparticle growth on α-Ag2WO4during electron beam irradiation: experimental evidence and theoretical insights

2015 ◽  
Vol 17 (7) ◽  
pp. 5352-5359 ◽  
Author(s):  
Wyllamanney da Silva Pereira ◽  
Juan Andrés ◽  
Lourdes Gracia ◽  
Miguel A. San-Miguel ◽  
Edison Z. da Silva ◽  
...  
Keyword(s):  
Electron Beam ◽  
Experimental Evidence ◽  
Real Time ◽  
Electron Beam Irradiation ◽  
Atomic Scale ◽  
Ag Nanoparticle ◽  
Beam Irradiation ◽  
The Real ◽  
Nanoparticle Growth

The nucleation of Ag on α-Ag2WO4is investigated at atomic-scale by TEM and FE-SEM techniques. Ag-3 and Ag-4 centers of the (100) sub-surface are the most favorable to diffuse to form metallic Ag.

Electron-Beam Induced Growth of Silica Nanowires and Silica/Carbon Heterostructures

2007 ◽  
Vol 1017 ◽  
Author(s):  
Francisco Solá ◽  
Oscar Resto ◽  
Azlin M Biaggi-Labiosa ◽  
Luis F Fonseca
Keyword(s):  
Electron Beam ◽  
Porous Silicon ◽  
Real Time ◽  
Electric Fields ◽  
Growth Process ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Electron Dose ◽  
Novel Synthesis ◽  
Silica Nanowires

AbstractA novel synthesis of silica nanowires and silica/carbon heterostructures by electron beam irradiation on porous silicon films was investigated. The method allows us to monitor the growth process in real time at atomic scales. Depending on the electron dose we obtain nanowires with diameters in the range of 15-49nm and lengths up to 500 nm. We found that the adequate electron dose was between 0.01 Acm-2 and 2 Acm-2. Additional electron dose causes plastic and failure deformations in the silica nanowires. A growth model consistent with our findings is presented that involves the flow of mass from the substrate to the nanowire driven by the local electric fields. Heterostructures showing a nanopalm-like shape are obtained after exposing the silica nanowire to poor vacuum conditions in which carbon aggregation from the surrounding gas is promoted by the local electric fields enhanced at the tip of the silica wires.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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