Electric Field Directed Growth of Molecular Wires of Charge Transfer Molecules on Prefabricated Metal Electrodes

2007 ◽  
Vol 1058 ◽  
Author(s):  
T Phanindra Sai ◽  
A K Raychaudhuri
Keyword(s):  
Electron Beam ◽  
Charge Transfer ◽  
Electron Beam Lithography ◽  
Molecular Wires ◽  
Metal Electrodes ◽  
Glass Cover ◽  
Glass Cover Slip ◽  
Single Complex ◽  
Directed Growth ◽  
The Difference

ABSTRACTMolecular wires of charge transfer molecules were formed by co-evaporating the 7 7 8 8-Tetracyanoquinodimethane [TCNQ] (acceptor) and Tetrathiafulvalene [TTF] (donor) molecules across prefabricated metal electrodes. Molecular wires of TTF TCNQ were also formed by evaporating single complex of TTF:TCNQ across prefabricated metal electrodes The prefabricated metal electrodes were made using electron beam lithography on SiO2 and glass cover slip substrates. Even though TTF: TCNQ wires grown from both co-evaporation and evaporation techniques show semiconductor like behavior in temperature dependence of resistance they show different activation energies due the difference in stoichiometry of TTF and TCNQ.

Factors influencing microstructural evolution in nanoparticle sintered Ag die attach

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000050-000058 ◽  
Author(s):  
S.A. Paknejad ◽  
A. Mansourian ◽  
Y. Noh ◽  
K. Khtatba ◽  
L. Van Parijs ◽  
...  
Keyword(s):  
Free Surface ◽  
Structural Changes ◽  
Applied Pressure ◽  
Optical Microscope ◽  
Glass Cover ◽  
Die Attach ◽  
Glass Cover Slip ◽  
The Difference ◽  
Sintered Ag ◽  
Sintered Silver

The behaviour of sintered silver die attach at high temperature has been investigated. Assemblies were made by sintering a commercially available paste composed of Ag nanoparticles with zero applied pressure on the die. The morphology of the cross sectioned surface of assemblies remains stable even at temperatures of up to 400 °C. This behaviour remained consistent even inside vacuum or after acid cleaning of the free surface. In contrast, the same sintered Ag material in the interior of a joint or sintered under a glass cover slip showed rapid microstructural changes even at 300 °C. These samples were investigated using an optical microscope to analyse the changes in the microstructure after storage at 200 to 500 °C. The observations showed a 20% increase in silver grain size after only 5 h storage at 300 °C. However, in the case of a free surface, no changes were observed after 60h storage at 400 °C. These observations were combined with DSC experiments in order to suggest the cause of the difference in behaviour. The results suggest ways of stabilizing sintered silver materials so that they can be used in applications up to 400 °C without significant structural changes occurring in the material.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Quanitative aspects of electron diffraction using electron holography

1995 ◽  
Vol 53 ◽  
pp. 616-617
Author(s):  
E. Völkl ◽  
L.F. Allard ◽  
B. Frost ◽  
T.A. Nolan
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Software Package ◽  
Spatial Coherence ◽  
Electron Holography ◽  
Image Intensity ◽  
Interference Fringes ◽  
Complex Image ◽  
The Difference ◽  
Recorded Image

Off-axis electron holography has the well known ability to preserve the complex image wave within the final, recorded image. This final image described by I(x,y) = I(r) contains contributions from the image intensity of the elastically scattered electrons IeI (r) = |A(r) exp (iΦ(r)) |, the contributions from the inelastically scattered electrons IineI (r), and the complex image wave Ψ = A(r) exp(iΦ(r)) as:(1) I(r) = IeI (r) + Iinel (r) + μ A(r) cos(2π Δk r + Φ(r))where the constant μ describes the contrast of the interference fringes which are related to the spatial coherence of the electron beam, and Φk is the resulting vector of the difference of the wavefront vectors of the two overlaping beams. Using a software package like HoloWorks, the complex image wave Ψ can be extracted.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

scholarly journals Nanooptical elements for visual verification

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Mass Production ◽  
Optical Element ◽  
Visual Image ◽  
Zero Order ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Standard Equipment ◽  
Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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