Molecular Beam Epitaxy of AlN Layers on Si (111)

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jean-Christophe Moreno ◽  
Eric Frayssinet ◽  
Fabrice Semond ◽  
Jean Massies
Keyword(s):  
Molecular Beam Epitaxy ◽  
Acoustic Wave ◽  
Wave Speed ◽  
Molecular Beam ◽  
Bulk Acoustic Wave ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Film Bulk

ABSTRACTIn this work, we present a study of epitaxial Aluminium Nitride (AlN) for thin film bulk acoustic wave (BAW) applications. Molecular beam epitaxy (MBE) was used to perform high crystalline quality AlN thin films growth on different silicon substrate preparations. A morphological study was performed by atomic force microscopy (AFM) and scanning electron microscopy (SEM), while structural properties and acoustic wave speed were respectively assessed by X-ray diffraction and acoustic picoseconds.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

scholarly journals High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

2D Materials ◽  
2021 ◽  
Author(s):  
Frédéric Bonell ◽  
Alain Marty ◽  
Céline Vergnaud ◽  
Vincent Consonni ◽  
Hanako Okuno ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Carrier Mobility ◽  
Insulating Substrates

Abstract PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisioned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V-1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.

High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001)

1999 ◽  
Vol 572 ◽  
Author(s):  
H. Siegle ◽  
Y. Kim ◽  
G. S. Sudhir ◽  
J. Kruger ◽  
P. Perlin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Alternative Substrate ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe report on growth of GaN on Germanium as an alternative substrate material. The GaN films were deposited on Ge(001) substrates by plasma-assisted molecular beam epitaxy. Atomic force microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy were used to characterize the structural and optical properties of the films. We observed that the Ga/N ratio plays a crucial role in determining the phase purity and crystal quality. Under N-rich conditions the films were phase-mixed, containing cubic and hexagonal GaN, while in the Ga-rich regime they were purily hexagonal. The latter samples show bandedge luminescence with linewidths as small as 31 meV at low temperatures.

scholarly journals P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire

2003 ◽  
Vol 8 ◽  
Author(s):  
R. Armitage ◽  
Qing Yang ◽  
Eicke R. Weber
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Image Position ◽  
P Type

Non-polar a-plane GaN films doped with Si or Mg were grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrates. The (110) orientation of the GaN epilayers was confirmed by x-ray diffraction. The layers were further characterized by atomic force microscopy, Hall effect, and photoluminescence measurements. The Mg-doped layers showed p-type conductivity, with a maximum hole concentration of 6×1017 cm−3 (μ = 2 cm2/Vs). Comparison with Mg-doping of N-polar c-plane GaN suggests the Mg sticking coefficient may be higher on the GaN (110) surface compared to the GaN (000) surface. The electron mobility obtained for a-plane GaN:Si (18 cm2/Vs for n = 1×1018 cm−3) was low compared to that of typical c-plane epilayers. The lower electron mobility is attributed to the higher density of structural defects in a-plane GaN.

Growth and Characterization of Epitaxial Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
M. J. Lukitsch ◽  
G. W. Auner ◽  
R. Naik ◽  
V. M. Naik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alloy Segregation

ABSTRACTEpitaxial Al1−xInxN films (thickness ∼150 nm) with 0 ≤ × ≤ 1 have been grown by Plasma Source Molecular Beam Epitaxy on Sapphire (0001) at a low substrate temperature of 375°C and were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), and atomic force microscopy (AFM). Both RHEED and XRD measurements confirm the c-plane growth of Al1-xInxN films on sapphire (0001) with the following epitaxial relations: Nitride [0001] ∥ Sapphire [0001] and Nitride < 0110 > ∥ Sapphire <2110>. The films do not show any alloy segregation. However, the degree of crystalline mosaicity and the compositional fluctuation increases with increasing In concentration. Further, AFM measurements show an increased surface roughness with increasing In concentration in the alloy films.

Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Grandjean ◽  
M. Leroux ◽  
J. Massies ◽  
M. Mesrine ◽  
P. Lorenzini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Buffer Layers ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Piezoelectric Field ◽  
Secondary Ion

ABSTRACTAmmonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. The effects of the V/III ratio variation on the GaN layer properties have been investigated by photoluminescence (PL), Hall measurements, atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS). It is found that a high V/III ratio leads to the best material quality. Optimized GaN thick buffer layers have been used to grow GaN/AlGaN quantum well (QW) heterostructures. Their PL spectra exhibit well resolved emission peaks for QW thicknesses varying from 3 to 15 monolayers. From the variation of the QW energies as a function of well width, a piezoelectric field of 450 kV/cm is deduced.

scholarly journals Dielectric Function of AlN Grown on Si (111) by MBE

1999 ◽  
Vol 572 ◽  
Author(s):  
Stefan Zollner ◽  
Atul Konkar ◽  
R. B. Gregory ◽  
S. R. Wilson ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Buffer Layers ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimensional Growth ◽  
Peak Widths

ABSTRACTWe measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

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