Effect of Annealing Temperature on SiC Wafer Bow and Warp

2008 ◽  
Vol 1069 ◽  
Author(s):  
Xueping Xu ◽  
Chris Martin
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Mechanical Damage ◽  
Surface Damage ◽  
Diamond Grit ◽  
X Ray ◽  
Commercial Grade ◽  
Single Side ◽  
Annealing Step ◽  
Sic Wafer

ABSTRACTSingle-side polished silicon carbide wafers could exhibit large bow and warp due to the presence of mechanical damage on the unpolished surface. In this study, we investigated the effect of thermal annealing on the wafer bow. Two commercial-grade, double-side polished 3¡¨ 6H SiC wafers with the bow less than 5 μm were lapped using 12 μm diamond grit. One wafer was lapped on the C-face and another on the Si-face. The lapped wafers were subjected to annealing in vacuum at temperatures between 500¢XC and 2040¢XC. The wafer bow and x-ray rocking curves were measured prior to annealing and after each annealing step in order to evaluate the extent of the surface damage and degree of healing. Thermal annealing led to a decrease in the wafer bow and sharpening of the x-ray rocking curves. However, the wafer bow generated by lapping was not completely removed until annealing temperature reached ∼2000°C.

scholarly journals Study of Detector-Grade CdMnTe:In Crystals Obtained by a Multi-Step Post-Growth Annealing Method

Crystals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 387 ◽  
Author(s):  
Pengfei Yu ◽  
Yongren Chen ◽  
Wei Li ◽  
Wenfei Liu ◽  
Bin Liu ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Crystal Quality ◽  
High Resistivity ◽  
Detector Performance ◽  
Rocking Curve ◽  
X Ray ◽  
Annealing Step ◽  
Subsequent Step ◽  
Te Inclusions ◽  
Annealing Method

A multi-step annealing method was successfully applied to inclusions reduction and resistivity improvement of CdMnTe:In (CMT:In) single crystals with high resistivity, including a Cd atmosphere annealing step followed by a Te atmosphere annealing step. After the Cd atmosphere annealing step, the density of Te inclusions was reduced distinctly, and it could be also decreased in the subsequent step of re-annealing under Te atmosphere. Both the resistivity and IR transmittance decreased notably after Cd atmosphere annealing, whereas they increased tremendously after re-annealing under a Te atmosphere. The reduction of full-width at-half-maximum (FWHM) and the increase of the intensity of the X-ray rocking curve indicated an improvement of the crystal quality. Meanwhile, after Cd atmosphere annealing, the increase of the intensity of the (D0,X) peak and the disappearance of the (A0,X) peak in photoluminescence (PL) measurements suggested further that the crystal quality was improved. The detector performance was enhanced obviously after annealing. The higher the annealing temperature, the better the performance was. The detector fabricated by CMT:In slice (Cd atmosphere annealing at 1073 K for 240 h and Te atmosphere re-annealing at 773 K for 120 h) with 9.43% energy resolution and 1.25 × 10−3 cm2/V μτ value had the best detector performance.

Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X

1991 ◽  
Vol 69 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
H. Lafontaine ◽  
J. F. Currie ◽  
S. Boily ◽  
M. Chaker ◽  
H. Pépin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Power ◽  
X Ray ◽  
Stress Changes ◽  
Different Temperatures ◽  
Absorbing Layer ◽  
Good Agreement ◽  
Sputtering System

Tungsten thin films are deposited with a triode sputtering system in order to obtain an absorbing layer for X-ray masks. The mechanical stress is studied as a function of different pressure and RF power conditions during deposition. Rapid thermal annealing at different temperatures and durations is performed in order to produce films under low compressive stress. We observe that the stress changes occur over the time scale of seconds at the annealing temperature and that the corresponding activation energies are low (60 meV). Grain growth in a preferred orientation explains the observed changes in stress. The magnitude in the change of stress is in good agreement with a model proposed by Hoffman et al. relating the stress to grain size and grain boundary dimensions. [Journal translation]

Aqueous Dissolution of Perovskite (CaTiO3): Effects of Surface Damage and [Ca2+] in the Leachant

2005 ◽  
Vol 20 (9) ◽  
pp. 2462-2473 ◽  
Author(s):  
Zhaoming Zhang ◽  
Mark G. Blackford ◽  
Gregory R. Lumpkin ◽  
Katherine L. Smith ◽  
Eric R. Vance
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Mechanical Damage ◽  
Surface Damage ◽  
Dissolution Behavior ◽  
Dissolution Testing ◽  
Cross Sectional ◽  
Intrinsic Dissolution ◽  
X Ray ◽  
Before And After

We have characterized thermally annealed perovskite (CaTiO3) surfaces, both before and after aqueous dissolution testing, using scanning electron microscopy, cross-sectional transmission electron microscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. It was shown that mechanical damage caused by polishing was essentially removed at the CaTiO3 surface by subsequent annealing; such annealed samples were used to study the intrinsic dissolution behavior of perovskite in deionized water at RT, 90 °C, and 150 °C. Our results indicate that, although mechanical damage caused higher Ca release initially, it did not affect the long-term Ca dissolution rate. However, the removal of surface damage by annealing did lead to the subsequent spatial ordering of the alteration product, which was identified as anatase (TiO2) by both x-ray and electron diffraction, on CaTiO3 surfaces after dissolution testing at150 °C. The effect of Ca2+ in the leachant on the dissolution reaction of perovskite at 150 °C was also investigated, and the results suggest that under repository conditions, the release of Ca from perovskite is likely to be significantly slower if Ca2+ is present in ground water.

Influence of annealing temperature on microstructure and lithium storage performance of self-templated CuxCo3−xO4 hollow microspheres

RSC Advances ◽  
2016 ◽  
Vol 6 (67) ◽  
pp. 62640-62646 ◽  
Author(s):  
Wanwan Lei ◽  
Longying Nie ◽  
Sheng Liu ◽  
Ying Zhuo ◽  
Ruo Yuan
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Hollow Microspheres ◽  
Solvothermal Reaction ◽  
Lithium Storage ◽  
Storage Performance ◽  
Annealing Step

Spinel CuxCo3−xO4 (x ≤ 0.30) hollow microspheres have been readily prepared via a self-templated solvothermal reaction followed by a thermal annealing step.

Doped ZnO Nanowires Obtained by Thermal Annealing

2007 ◽  
Vol 7 (2) ◽  
pp. 700-703 ◽  
Author(s):  
C. X. Shan ◽  
Z. Liu ◽  
C. C. Wong ◽  
S. K. Hark
Keyword(s):  
Thermal Annealing ◽  
Doping Concentration ◽  
Annealing Temperature ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Znse Nanowires ◽  
Annealing Method ◽  
Scanning Electron

Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires. The incorporation of the dopants was confirmed by energy dispersive X-ray spectroscopy. The doping concentration could be adjusted by changing the annealing temperature and duration. Scanning electron microscopy indicated that the morphology of the ZnSe nanowires was essentially retained after the annealing and doping process. Photoluminescence spectroscopy also verified the incorporation of the dopants into the nanowires.

scholarly journals Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers

2019 ◽  
Vol 9 (22) ◽  
pp. 4725
Author(s):  
D. M. Zhigunov ◽  
A. A. Popov ◽  
Yu. M. Chesnokov ◽  
A. L. Vasiliev ◽  
A. M. Lebedev ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
X Ray ◽  
Near Ir ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Mean Size ◽  
The One ◽  
Multilayered Thin Films

Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed.

Thermal Annealing-Activated Crystallinity Metastasis of Al:ZnO Thin Films

2015 ◽  
Vol 1109 ◽  
pp. 181-185 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
M.Z. Musa ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Multilayered Thin Films

Multilayered thin films of aluminum-doped ZnO (Al:ZnO) have been deposited by the sol-gel dip coating technique. Experimental results indicated that the thermal annealing temperature affected the crystallinity of the Al:ZnO films. X-ray diffraction (XRD) analysis showed that thin films were preferentially orientated along the c-axis plane. The preferred orientation along (0 0 2) plane becomes more pronounced as the thermal annealing being increased. The film thickness ranges between 180 and 690 nm. In our experiments, the most optimum condition of Al:ZnO annealing temperature was both 500 oC.

Doped ZnO Nanowires Obtained by Thermal Annealing

2007 ◽  
Vol 7 (2) ◽  
pp. 700-703
Author(s):  
C. X. Shan ◽  
Z. Liu ◽  
C. C. Wong ◽  
S. K. Hark
Keyword(s):  
Thermal Annealing ◽  
Doping Concentration ◽  
Annealing Temperature ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Znse Nanowires ◽  
Annealing Method ◽  
Scanning Electron

Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires. The incorporation of the dopants was confirmed by energy dispersive X-ray spectroscopy. The doping concentration could be adjusted by changing the annealing temperature and duration. Scanning electron microscopy indicated that the morphology of the ZnSe nanowires was essentially retained after the annealing and doping process. Photoluminescence spectroscopy also verified the incorporation of the dopants into the nanowires.

Structural Analysis of Silicon Nanostructures Obtained from Thermal Annealing of a-Si:H/SiO2 Superlattices

2014 ◽  
Vol 605 ◽  
pp. 295-298 ◽  
Author(s):  
Solomon Agbo ◽  
Pavel Calta ◽  
P. Šutta ◽  
V. Vavruňková ◽  
M. Netrvalová ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Vapour Deposition ◽  
Annealing Temperature ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Silicon Nanostructures ◽  
X Ray ◽  
Hydrogenated Amorphous

This paper reports the synthesis and characterization of silicon quantum dots (QDs) obtained by thermal annealing of hydrogenated amorphous silicon (a-Si:H)/silicon oxide (SiO2) supperlattices deposited by plasma-enhanced chemical vapour deposition (PE-CVD). The as-deposited supperlattices have been annealed in high-temperature vacuum chamber, at temperatures up to 1100 °C, where in-situ phase transformation was monitored by x-ray diffractometry, XRD. It is shown that onset of crystallization and phase separation occur at different annealing temperature depending on the a-Si:H sub-layer thickness. Complete crystallization of the films and precipitation of the QDs occur at 1000 °C.

Sign in / Sign up

Export Citation Format

Share Document