Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge Nanocrystals

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chyuan-Haur Kao ◽  
C. S. Lai ◽  
M. C. Tsai ◽  
C. H. Lee ◽  
C. S. Huang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
One Step ◽  
Amorphous Si ◽  
Annealing Method ◽  
Ge Nanocrystals

AbstractIn this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on polycrystalline-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6321-6325 ◽  
Author(s):  
Chien-Jen Wang ◽  
Ming-Shiann Feng ◽  
ShihHsiungChan ◽  
Janne-Wha Wu ◽  
Chun-Yen Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

SiGe Nanocrystals Fabricated by One-Step Thermal Oxidation and Rapid Thermal Annealing

2008 ◽  
Vol 11 (4) ◽  
pp. K44 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
M. C. Tsai ◽  
K. M. Fan ◽  
C. H. Lee ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
One Step

Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD

1996 ◽  
Vol 420 ◽  
Author(s):  
A. Banerjee ◽  
G. Lucovsky
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase System ◽  
Plasma Cvd ◽  
Two Phase ◽  
Hydrogenated Silicon ◽  
Silicon Suboxide ◽  
Deposited Films

AbstractHydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as SiO2 and Si3N4 in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-SiO2 and c-Si-Si3N4 interfaces, respectively.

Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-k SiCOH films

2008 ◽  
Vol 23 (3) ◽  
pp. 856-861 ◽  
Author(s):  
Sungwoo Lee ◽  
Donggeun Jung ◽  
Jaeyoung Yang ◽  
Jin-hyo Boo ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Treatment Temperature ◽  
Ftir Analysis ◽  
Film Properties ◽  
The Fourier Transform ◽  
Low K

Rapid thermal annealing (RTA) processing under N2 and O2 ambient is suggested and characterized in this work for improvement of SiCOH ultra-low-k (k = 2.4) film properties. Low-k film was deposited by plasma-enhanced chemical vapor deposition (PECVD) with decamethylcyclopentasiloxane and cyclohexane precursors. The PECVD films were treated by RTA processing in N2 and O2 environments at 550 °C for 5 min, and k values of 1.85 and 2.15 were achieved in N2 and O2 environments, respectively. Changes in the k value were correlated with the chemical composition of C–Hx and Si–O related groups determined from the Fourier transform infrared (FTIR) analysis. As the treatment temperature was increased from 300 to 550 °C, the signal intensities of both the CHx and Si–CH3 peaks were markedly decreased. The hardness and modulus of the film processed by RTA have been determined as 0.44 and 3.95 GPa, respectively. Hardness and modulus of RTA-treated films were correlated with D-group [O2Si–(CH3)2] and T-group [O3Si–(CH3)] fractions determined from the FTIR Si–CH3 bending peak. The hardness and modulus improvement in this work is attributed to the increase of oxygen content in (O)x–Si–(CH3)y by rearrangement.

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