Room Temperature Ferromagnetism and Lack of Ferroelectricity in Thin Films of ‘Biferroic’ YbCrO3

2009 ◽  
Vol 1161 ◽  
Author(s):  
Sandeep Nagar ◽  
K. V. Rao ◽  
Lyubov M. Belova ◽  
G. Catalan ◽  
J. Hong ◽  
...  

AbstractSearch for novel multi-functional materials, especially multiferroics, which are ferromagnetic above room temperature and at the same time exhibit a ferroelectric behavior much above room temperature, is an active topic of extensive studies today. Ability to address an entity with an external field, laser beam, and also electric potential is a welcome challenge to develop multifunctional devices enabled by nanoscience. While most of the studies to date have been on various forms of Bi- and Ba based Ferrites, rare earth chromites are a new class of materials which appear to show some promise. However in the powder and bulk form these materials are at best canted antiferromagnetics with the magnetic transition temperatures much below room temperature. In this presentation we show that thin films of YbCrO3 deposited by Pulsed Laser Deposition exhibit robust ferromagnetic properties above room temperature. It is indeed a welcome surprise and a challenge to understand the evolution of above room temperature ferromagnetism in such a thin film. The thin films are amorphous in contrast to the powder and bulk forms which are crystalline. The magnetic properties are those of a soft magnet with low coercivity. We present extensive investigations of the magnetic and ferroelectric properties, and spectroscopic studies using XAS techniques to understand the electronic states of the constituent atoms in this novel Chromite. While the amorphous films are ferromagnetic much above room temperature, we show that any observation of ferroelectric property in these films is an artifact of a leaky highly resistive material.

Author(s):  
J. L. Batstone ◽  
D.A. Smith

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.


2021 ◽  
Vol 527 ◽  
pp. 167775
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Xiaodong Lao ◽  
Yongmei Wang ◽  
Honglei Yuan

2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey

2007 ◽  
Vol 24 (1) ◽  
pp. 218-221 ◽  
Author(s):  
Song Yuan-Qiang ◽  
Zhang Huai-Wu ◽  
Wen Qi-Ye ◽  
Li Yuan-Xun ◽  
John Q Xiao

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.


1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.


2004 ◽  
Vol 271 (3-4) ◽  
pp. 420-424 ◽  
Author(s):  
Moon-Ho Ham ◽  
Sukho Yoon ◽  
Yongjo Park ◽  
Jae-Min Myoung

2012 ◽  
Vol 152 (17) ◽  
pp. 1625-1629 ◽  
Author(s):  
H.B. Ruan ◽  
L. Fang ◽  
G.P. Qin ◽  
T.Y. Yang ◽  
W.J. Li ◽  
...  

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu

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