High-Current and Low Acceleration Voltage Arsenic Ion Implanted Polysilicon-Gate and Source-Drain Electrode Si MOS Transistor

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasuyuki Saito ◽  
Yoshiro Sugimura ◽  
Michiyuki Sugihara
Keyword(s):  
Ion Implantation ◽  
Oxide Semiconductor ◽  
Implantation Technique ◽  
High Dose ◽  
High Current ◽  
Single Chip ◽  
Mos Transistor ◽  
Polysilicon Gate ◽  
Acceleration Voltage ◽  
Ion Implanted

ABSTRACTThe fabrication process of high current arsenic (As) ion implanted poly-silicon (Si) gate and source-drain (SD) electrode Si n-channel metal-oxide-semiconductor field-effect-transistor (MOSFET) was examined. Poly-Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose-As implanted poly-Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique. the n-channel poly-Si gate (ps=∼L00ft/o) enhancement MOSFETs(ps-source-drain = =50n/o, SiO2 gate=380A) with off-leak-less were obtained on 3”Czochralski-grown 2Ωcm boron-doped p-type wafers (Osaka titanium). By the same process, a 8-bit single chip μ-processor with 26MHz full operation was performed.

scholarly journals Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

RSC Advances ◽  
2019 ◽  
Vol 9 (35) ◽  
pp. 20375-20384 ◽  
Author(s):  
Navdeep Kaur ◽  
Aman Mahajan ◽  
Viplove Bhullar ◽  
Davinder Paul Singh ◽  
Vibha Saxena ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Metal Nanoparticles ◽  
Dye Sensitized Solar Cells ◽  
Implantation Technique ◽  
Dye Sensitized ◽  
Stability Issue ◽  
The Stability ◽  
Sensitized Solar Cells ◽  
Ion Implanted

Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

scholarly journals Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
L. L. Meisner ◽  
A. I. Lotkov ◽  
V. A. Matveeva ◽  
L. V. Artemieva ◽  
S. N. Meisner ◽  
...  
Keyword(s):  
Stem Cells ◽  
Flow Cytometry ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Cell Counting ◽  
High Dose ◽  
Surface Layers ◽  
Test Flow ◽  
Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

The Production of Porous Structures on Si, Ge and GaAs by High Dose Ion Implantation.

1983 ◽  
Vol 27 ◽  
Author(s):  
J.S. Williams ◽  
D.J. Chivers ◽  
R.G. Elliman ◽  
S.T. Johnson ◽  
E.M. Lawson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strong Evidence ◽  
Heavy Ion ◽  
High Dose ◽  
Porous Structures ◽  
Structural Modifications ◽  
Gaas Substrates ◽  
Ion Implanted

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 40-46 ◽  
Author(s):  
G.K. Celler ◽  
Alice E. White
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Integrated Circuit ◽  
High Dose ◽  
High Current ◽  
Silicide Formation ◽  
Semiconductor Substrate ◽  
Beam Currents ◽  
New Generation ◽  
High Dose Implantation

Experiments in ion implantation were first performed almost 40 years ago by nuclear physicists. More recently, ion implanters have become permanent fixtures in integrated circuit processing lines. Manufacture of the more complex integrated circuits may involve as many as 10 different ion implantation steps. Implantation is used primarily at f luences of 1012–1015 ions/cm2 to tailor the electrical properties of a semiconductor substrate, but causing only a small perturbation in the composition of the target (see the article by Seidel and Larson in this issue of the MRS Bulletin). Applications of implantation had been limited by the small beam currents that were available, but recently a new generation of high-current implanters has been developed. This high-current capability allows implanting concentrations up to three orders of magnitude higher than those required for doping—enough to create a compound.

Ge Nanocrystal Formed Directly by High-Dose-Ion-Implantation and the Related UV-VIS Photoluminescence

2003 ◽  
Vol 792 ◽  
Author(s):  
Yingqiu Zeng ◽  
Tiecheng Lu ◽  
Ping Zou ◽  
Sha Zhu ◽  
Lumin Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Compressive Stress ◽  
Formation Mechanism ◽  
Subsequent Annealing ◽  
Threshold Dose ◽  
High Dose ◽  
Annealing Zone ◽  
Ion Implanted

ABSTRACTThe investigation of nanocrystalline Ge (nc-Ge) directly prepared with high dose Ge ion implantation of 1×1016, 1×1017, 5×1017 and 1×1018cm-2 respectively without subsequent annealing is presented in this paper. The specimens were measured by means of GIXRD, LRS and PL. The results show the nc-Ge, which possesses strong compressive stress, can be fabricated when the implanting dose of Ge ions is over the threshold dose∼1×1017cm-2. The content and size of nc-Ge will enlarge with increasing dose. The nc-Ge formation mechanism may be the Ge atoms in the amorphous Ge (a-Ge) clusters, which are formed through the aggregation of implanted Ge ions, obtain energy from the instant local annealing zone induced by the incident Ge ion and reconstruct to nc-Ge existing in a-Ge clusters. The PL results indicate the strong PL peaks centered at about 295, 400 and 570 nm can be observed in implanted samples. The intensity of these PL peaks increases with increasing dose. The related PL mechanism in Ge-ion-implanted SiO2 film has also been discussed.

High-dose ion implantation using a high-current plasma lens

2000 ◽  
Vol 128-129 ◽  
pp. 15-20 ◽  
Author(s):  
A.A Goncharov ◽  
I.M Protsenko ◽  
G.Yu Yushkov ◽  
O.R Monteiro ◽  
I.G Brown
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
High Current

High Current Gain Triple Ion Implanted 4H-SiC BJT

2009 ◽  
Vol 1195 ◽  
Author(s):  
Taku Tajima ◽  
Tadashi Nakamura ◽  
Yuki Watabe ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Current Gain ◽  
High Current ◽  
Extrinsic Base ◽  
Triple Ion ◽  
Ion Implanted

AbstractWe investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

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