Dependence of Field-Effect Mobility of Graphene Grown by Thermal Chemical Vapor Deposition on Its Grain Size

2013 ◽  
Vol 52 (11R) ◽  
pp. 110106 ◽  
Author(s):  
Katsunori Yagi ◽  
Ayaka Yamada ◽  
Kenjiro Hayashi ◽  
Naoki Harada ◽  
Shintaro Sato ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Thermal Chemical Vapor Deposition

High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Mobility ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Low Threshold ◽  
Hydrogenated Amorphous ◽  
Very High

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

2005 ◽  
Vol 483-485 ◽  
pp. 841-844 ◽  
Author(s):  
Einar Ö. Sveinbjörnsson ◽  
H.Ö. Ólafsson ◽  
G. Gudjónsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Field ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Fabrication And Characterization ◽  
Peak Field

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.

scholarly journals Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1278 ◽  
Author(s):  
Jae Sang Lee ◽  
Chang-Soo Park ◽  
Tae Young Kim ◽  
Yoon Sok Kim ◽  
Eun Kyu Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Monolayer Mos2 ◽  
Current Ratio ◽  
Phosphorous Pentoxide ◽  
P Type ◽  
Type Conduction

We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A1g and E12g modes for both the pristine and P-doped samples was 19.4 cm−1. In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm2/V⋅s and an on/off current ratio of 103, while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm2/V⋅s and an on/off current ratio of 105. The carriers in the FET channel were identified as holes with a concentration of 1.01 × 1011 cm−2 in P-doped MoS2, while the pristine material had an electron concentration of 6.47 × 1011 cm−2.

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