Barrier Metal Ions Drift into Porous Low k Dielectrics under Bias-Temperature stress
Keyword(s):
Low K
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AbstractTa family has been used as barrier to prevent Cu diffusion into interlayer dielectric in IC applications. Recent experiments demonstrated a more severe flatband voltage shift (ΔVFB) occurred for Ta/porous low k dielectrics/Si capacitors compared to that of Cu/porous low k dielectrics/Si capacitors after a moderate bias temperature stress (BTS). The flatband voltage shift under BTS was interpreted as the penetration of Ta ions into porous low k dielectrics. However, this interpretation has been under debate. In this paper, by using Secondary Ion Mass Spectrometry (SIMS) backside sputter depth profile technique, we report a direct evidence of Ta ions inside porous methyl silsesquioxane (MSQ) in a Ta/MSQ/Si structure after BTS.
2019 ◽
Vol 52
(40)
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pp. 405103
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Keyword(s):
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1998 ◽
Vol 45
(1)
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pp. 165-172
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2003 ◽
Vol 42
(Part 2, No. 8A)
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pp. L910-L913
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Keyword(s):
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2011 ◽
Vol 51
(8)
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pp. 1342-1345
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