Thermal Annealing Investigation of the Optical Properties of Si1-xNx Films Fabricated by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
D. Van Vechten
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filters ◽  
Beam Current ◽  
Index Of Refraction ◽  
Silicon Substrates ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of silicon nitride films (Si1-xNx) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous, amorphous samples deposited on (100) silicon substrates was measured from 500 to 3120 nm. Fits to the interference spectra were obtained over the range 1000 to 3120 nm to obtain the index of refraction vs wavelength as a function of film nitrogen content. Nitrogen atom fraction was varied from.2 to.58 by variation of the incident relative fluxes of nitrogen ion beam current to evaporant silicon flux. The films were annealed in argon at 450 C, 600 C, 750 C, and 1100 C and the measurements repeated. The systematic shifts in index of refraction with annealing temperature are described.

Thermal Annealing Investigation of the Optical Properties of BxN1-X Films Fabricated by Ion Beam Assisted Deposition and Application for an Optical Filter

1989 ◽  
Vol 157 ◽  
Author(s):  
C.A. Carosella ◽  
E.P. Donovan ◽  
G.K. Hubler ◽  
A.E. Skowronek
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filter ◽  
Flux Ratio ◽  
Optical Filters ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of boron nitride films (BxN1-x) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous samples deposited at room temperature on (100) silicon substrates was measured from 400 to 3125 nm. to obtain the wavelength dependence of the index of refraction as a function of film nitrogen content. Nitrogen atom fraction was varied from 0.325 to 0.5 by variation of the incident of nitrogen ion beam current to evaporant boron flux ratio. The films were annealed in argon at 500 C and 700 C, and the optical measurements repeated after each anneal. The index of refraction obtained for the annealed films was used to design a narrow band optical reflection filter at 1060 nm. The filter, constructed by sinusoidally varying the index of refraction of the BxN1-x film by varying ‘x’, performed as designed.

Infrared and Ion Beam Analysis of SIxN1−x Alloys Grown by Ion Beam Assisted Deposition

1986 ◽  
Vol 71 ◽  
Author(s):  
E.P. Donovan ◽  
D.R. Brighton ◽  
D. Van Vechten ◽  
G.K. Hubler
Keyword(s):  
Nitrogen Content ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Front Surface ◽  
Index Of Refraction ◽  
Reflection Spectra ◽  
Crystal Silicon ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion ◽  
Film Substrate

AbstractThin films of amorphous SixNl-x alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm−1. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford BackscatterLng Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content.

scholarly journals Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Petr Vlcak ◽  
Ivan Jirka
Keyword(s):  
Coefficient Of Friction ◽  
Ion Beam ◽  
Reference Sample ◽  
Surface Hardness ◽  
Ti6al4v Alloy ◽  
Ion Beam Assisted Deposition ◽  
The Coefficient Of Friction ◽  
Nitrogen Ion ◽  
Ion Assistance ◽  
Carbon Based

The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

Thermal Annealing Behavior of Si-DLC Ibad Coatings

1996 ◽  
Vol 438 ◽  
Author(s):  
C. G. Fountzoulas ◽  
J. D. Demaree ◽  
L. C. Sengupta ◽  
J. K. Hirvonen
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Carbon Coatings ◽  
Dlc Coatings ◽  
Annealing Behavior ◽  
Ion Beam Assisted Deposition ◽  
Disk Friction ◽  
Knoop Microhardness ◽  
Absorption Features

AbstractAmorphous, 700 nm thick, diamond-like carbon coatings containing silicon (Si-DLC), farmed by Ar+ ion beam assisted deposition (IBAD) on silicon substrates, were annealed in air at temperatures ranging from room temperature to 600°C for 30 minutes. RBS analysis showed that the composition of the films remained the same up to 200°C, but at higher temperatures the Si-DLC coatings began to oxidize at the outer surface of the coating, forming a surface layer of SiO2. After in-air annealing at 600°C the coating had been completely converted to SiO2, with no trace of carbon seen by RBS. FTIR spectra of the unannealed coatings showed a very broad mode typical of Si-DLC bonding as well as some absorption features associated with Si and SiO2. Above 200°C the transmission mode shifted to higher frequencies which may be caused by the growth of SiO2 and the decrease of the Si-DLC film thickness. The room temperature ball-on-disk friction coefficient of the coating against a 1/2′′ diameter 440 C steel ball at 1 N load ranged from 0.2 for the original coating up to 0.5 after a 100° anneal and returned to 0.2 after annealing at 200–400°C and fell to 0.12 after a 500°C exposure. The average Knoop microhardness (uncorrected for substrate effects) was 10 GPa (1,000 KHN) for coatings annealed at temperatures as high as 400°C. All coatings up to 500 °C passed the qualitative “Scotch Tape” test.

Ion Beam Assisted Deposition of Metal Films

1988 ◽  
Vol 131 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Substrate Temperature ◽  
Beam Energy ◽  
Ion Beam ◽  
Metal Films ◽  
Photon Beam ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Enhanced Oxidation ◽  
Ion Species ◽  
Deposited Films

ABSTRACTThe chtaracteristics of ion beam assisted deposition are discussed and compared with those of photon beam assisted deposition. Effects of various deposition parameters including ion species, beam energy and substrate temperature are discussed. Deposited films usually include impurities such as C and O. Inclusion of oxygen takes place by enhanced oxidation by background oxygen and may be reduced by depositing in a clean vacuum. Promising applications of maskless ion beam assisted deposition are also discussed.

Properties of Silicon Oxynitride and Aluminum Oxynitride Coatings Deposited Using Ion Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
G. A. Al-Jumaily ◽  
T. A. Mooney ◽  
W. A. Spurgeon ◽  
H. M. Dauplaise
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Evaporation ◽  
Ion Beam ◽  
Silicon Oxynitride ◽  
Index Of Refraction ◽  
Environmental Stability ◽  
Gas Mixture ◽  
Aluminum Oxynitride ◽  
Oxynitride Coatings

ABSTRACTOptical thin films of nitrides, oxynitrides and oxides of aluminum and silicon were deposited using ion assisted deposition. Coatings were deposited by thermal evaporation of AlN and e-beam evaporation of Si with simultaneous bombardment with 300 eV ions of nitrogen, a mixture of nitrogen and oxygen or oxygen. The chemical composition and the index of refraction of the coating was varied by varying the gas mixture in the ion beam. Optical properties of and environmental stability of coatings were examined. Results indicated that coatings are stable even under severe conditions of humidity and temperature.

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