Thermal Annealing Investigation of the Optical Properties of BxN1-X Films Fabricated by Ion Beam Assisted Deposition and Application for an Optical Filter

1989 ◽  
Vol 157 ◽  
Author(s):  
C.A. Carosella ◽  
E.P. Donovan ◽  
G.K. Hubler ◽  
A.E. Skowronek
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filter ◽  
Flux Ratio ◽  
Optical Filters ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of boron nitride films (BxN1-x) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous samples deposited at room temperature on (100) silicon substrates was measured from 400 to 3125 nm. to obtain the wavelength dependence of the index of refraction as a function of film nitrogen content. Nitrogen atom fraction was varied from 0.325 to 0.5 by variation of the incident of nitrogen ion beam current to evaporant boron flux ratio. The films were annealed in argon at 500 C and 700 C, and the optical measurements repeated after each anneal. The index of refraction obtained for the annealed films was used to design a narrow band optical reflection filter at 1060 nm. The filter, constructed by sinusoidally varying the index of refraction of the BxN1-x film by varying ‘x’, performed as designed.

Thermal Annealing Investigation of the Optical Properties of Si1-xNx Films Fabricated by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
D. Van Vechten
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filters ◽  
Beam Current ◽  
Index Of Refraction ◽  
Silicon Substrates ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of silicon nitride films (Si1-xNx) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous, amorphous samples deposited on (100) silicon substrates was measured from 500 to 3120 nm. Fits to the interference spectra were obtained over the range 1000 to 3120 nm to obtain the index of refraction vs wavelength as a function of film nitrogen content. Nitrogen atom fraction was varied from.2 to.58 by variation of the incident relative fluxes of nitrogen ion beam current to evaporant silicon flux. The films were annealed in argon at 450 C, 600 C, 750 C, and 1100 C and the measurements repeated. The systematic shifts in index of refraction with annealing temperature are described.

Infrared and Ion Beam Analysis of SIxN1−x Alloys Grown by Ion Beam Assisted Deposition

1986 ◽  
Vol 71 ◽  
Author(s):  
E.P. Donovan ◽  
D.R. Brighton ◽  
D. Van Vechten ◽  
G.K. Hubler
Keyword(s):  
Nitrogen Content ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Front Surface ◽  
Index Of Refraction ◽  
Reflection Spectra ◽  
Crystal Silicon ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion ◽  
Film Substrate

AbstractThin films of amorphous SixNl-x alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm−1. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford BackscatterLng Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content.

Microstructure and Optical Properties of Aluminum Nitride Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Aluminum Nitride ◽  
Beam Energy ◽  
Ion Beam ◽  
Optical Measurements ◽  
Constant Current ◽  
Constant Current Density ◽  
Polycrystalline Aluminum ◽  
Nitrogen Ion

AbstractPolycrystalline aluminum nitride (AIN) thin films have been synthesized by ion-beam assisted deposition method and the effect of ion beam energy on the film structure and optical properties has been studied. The kinetic energy of nitrogen ion beam was varied from 0.05 to 1.5 keV under the constant current density. Microstructure of films was examined by thin film X ray diffraction (TFXRD) and optical transmission spectrum from 220 to 2200 nm was measured by UV-visible spectrometer. The TFXRD studies show that the (00*02) plane of hexagonal AIN grows preferentially with the ion beam energy of 0.05 keV and the intensity of the (10*0) and (10*1) planes becomes strong with increasing the ion beam energy. The optical measurements reveal that the wavy structures due to the interference effect are observed in the transmission spectra and the wavy pattern decreases with increasing the ion beam energy, resulting in the decrease of refractive index.

scholarly journals Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Petr Vlcak ◽  
Ivan Jirka
Keyword(s):  
Coefficient Of Friction ◽  
Ion Beam ◽  
Reference Sample ◽  
Surface Hardness ◽  
Ti6al4v Alloy ◽  
Ion Beam Assisted Deposition ◽  
The Coefficient Of Friction ◽  
Nitrogen Ion ◽  
Ion Assistance ◽  
Carbon Based

The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Properties of Silicon Oxynitride and Aluminum Oxynitride Coatings Deposited Using Ion Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
G. A. Al-Jumaily ◽  
T. A. Mooney ◽  
W. A. Spurgeon ◽  
H. M. Dauplaise
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Evaporation ◽  
Ion Beam ◽  
Silicon Oxynitride ◽  
Index Of Refraction ◽  
Environmental Stability ◽  
Gas Mixture ◽  
Aluminum Oxynitride ◽  
Oxynitride Coatings

ABSTRACTOptical thin films of nitrides, oxynitrides and oxides of aluminum and silicon were deposited using ion assisted deposition. Coatings were deposited by thermal evaporation of AlN and e-beam evaporation of Si with simultaneous bombardment with 300 eV ions of nitrogen, a mixture of nitrogen and oxygen or oxygen. The chemical composition and the index of refraction of the coating was varied by varying the gas mixture in the ion beam. Optical properties of and environmental stability of coatings were examined. Results indicated that coatings are stable even under severe conditions of humidity and temperature.

scholarly journals Tribomechanical Properties of a Carbon-Based Nanolayer Prepared by Nitrogen Ion Beam Assisted Deposition for Finger Joint Replacements

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Tomas Horazdovsky ◽  
Radka Vrbova
Keyword(s):  
Ion Beam ◽  
Titanium Substrate ◽  
Surface Hardness ◽  
Ion Bombardment ◽  
Ti6al4v Alloy ◽  
Wear Testing ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion ◽  
Ion Assistance ◽  
Carbon Based

This paper presents the tribomechanical test results of Ti6Al4V alloy modified by carbon-based nanolayers with a thickness of 20 nm and 40 nm, prepared by nitrogen ion beam assisted deposition. The presence of carbon and nitrogen compounds was observed in the modified surface after ion bombardment. Nonstoichiometric TiNx was mainly detected near the interface nanolayer/titanium substrate and in the substrate itself. Ion bombardment led to an improved surface hardness of ~13 GPa in comparison to unmodified Ti6Al4V titanium alloy (~5.5 GPa) and alloy coated by carbon nanolayer without nitrogen ion assistance (~7 GPa). The decreasing of friction coefficient was achieved from 0.5–0.6 for untreated Ti6Al4V alloy to 0.1 for treated Ti6Al4V alloy. Wear testing using a joint wear simulator proved that the modified Ti6Al4V alloy has a higher resistance compared to the unmodified Ti6Al4V alloy. The primary local wear fault of the treated surface was observed after 240,000 cycles in comparison to enormous wear on the untreated surface after just 10,000 cycles. Treating the Ti6Al4V load-bearing components of implants with carbon-based nanolayers assisted by nitrogen ions is very promising in terms of extending the lifetime of implants and thereby reduces patient burden.

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