Infrared and Ion Beam Analysis of SIxN1−x Alloys Grown by Ion Beam Assisted Deposition

1986 ◽  
Vol 71 ◽  
Author(s):  
E.P. Donovan ◽  
D.R. Brighton ◽  
D. Van Vechten ◽  
G.K. Hubler
Keyword(s):  
Nitrogen Content ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Front Surface ◽  
Index Of Refraction ◽  
Reflection Spectra ◽  
Crystal Silicon ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion ◽  
Film Substrate

AbstractThin films of amorphous SixNl-x alloys were produced by nitrogen ion beam assisted deposition of electron beam evaporated silicon. Infrared reflection spectra were measured in the range 600 to 10000 cm−1. Fringes were observed due to interference between light multiply-reflected from the front surface and film-substrate (single crystal silicon) interface. Similar measurements were performed on films crystallized by post-deposition furnace anneals. Analyses of the reflection spectra were used to obtain refractive index profiles. Profiles were correlated with nitrogen content as measured by Rutherford BackscatterLng Spectometry (RBS) and Auger Electron Spectroscopy (AES). Film adhesion, density, and purity were found to be improved for depositions assisted by nitrogen ion beams (1000 to 25,000 eV) relative to unassisted evaporation, and the index of refraction decreases monotonically with increasing nitrogen content.

Thermal Annealing Investigation of the Optical Properties of Si1-xNx Films Fabricated by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
D. Van Vechten
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filters ◽  
Beam Current ◽  
Index Of Refraction ◽  
Silicon Substrates ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of silicon nitride films (Si1-xNx) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous, amorphous samples deposited on (100) silicon substrates was measured from 500 to 3120 nm. Fits to the interference spectra were obtained over the range 1000 to 3120 nm to obtain the index of refraction vs wavelength as a function of film nitrogen content. Nitrogen atom fraction was varied from.2 to.58 by variation of the incident relative fluxes of nitrogen ion beam current to evaporant silicon flux. The films were annealed in argon at 450 C, 600 C, 750 C, and 1100 C and the measurements repeated. The systematic shifts in index of refraction with annealing temperature are described.

scholarly journals An Investigation into Fracture of Multi-Crystalline Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 55-60
Author(s):  
B.R. Mansfield ◽  
David E.J. Armstrong ◽  
Peter R. Wilshaw ◽  
John D. Murphy
Keyword(s):  
Grain Boundaries ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Front Surface ◽  
Beam Width ◽  
Relative Strength ◽  
Transgranular Fracture ◽  
Crystal Silicon

As the thickness of multi-crystalline silicon solar cells continues to reduce, understanding the mechanical properties of the material is of increasing importance. In this study, a variety of techniques are used to study multi-crystalline silicon. Fracture tests are performed using four- and three-point bending. The fracture stress of as-sawn material reduces with increasing beam width and is increased in beams with a polished front surface. This indicates that fracture initiates from surface flaws. Modifications to standard fracture testing, including testing under liquid, are made so that beams fracture into just two pieces. By determining the crystallography either side of the location of fracture, multi-crystalline silicon was found to fail by transgranular fracture in the samples studied. Further evidence for this is gained from indentation experiments at grain boundaries. In order to understand the relative strength of grain boundaries, new approaches need to be considered. Therefore, a novel micromechanical technique, which enables individual grain boundaries to be studied, has started to be applied to multi-crystalline silicon. A focused ion beam is used to mill micron-scale cantilevers across notched grain boundaries, which are then loaded to fracture using the tip of a nanoindenter. The technique is shown to reproduce the known fracture toughness of {110} planes in single-crystal silicon, giving a value of 0.7 ± 0.3MPam1/2. Preliminary results are presented for fracture of multi-crystalline silicon.

Thermal Annealing Investigation of the Optical Properties of BxN1-X Films Fabricated by Ion Beam Assisted Deposition and Application for an Optical Filter

1989 ◽  
Vol 157 ◽  
Author(s):  
C.A. Carosella ◽  
E.P. Donovan ◽  
G.K. Hubler ◽  
A.E. Skowronek
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filter ◽  
Flux Ratio ◽  
Optical Filters ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of boron nitride films (BxN1-x) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous samples deposited at room temperature on (100) silicon substrates was measured from 400 to 3125 nm. to obtain the wavelength dependence of the index of refraction as a function of film nitrogen content. Nitrogen atom fraction was varied from 0.325 to 0.5 by variation of the incident of nitrogen ion beam current to evaporant boron flux ratio. The films were annealed in argon at 500 C and 700 C, and the optical measurements repeated after each anneal. The index of refraction obtained for the annealed films was used to design a narrow band optical reflection filter at 1060 nm. The filter, constructed by sinusoidally varying the index of refraction of the BxN1-x film by varying ‘x’, performed as designed.

Material removal and surface evolution of single crystal silicon during ion beam polishing

2021 ◽  
pp. 148954
Author(s):  
Hang Xiao ◽  
Yifan Dai ◽  
Jian Duan ◽  
Ye Tian ◽  
Jia Li
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Surface Evolution

scholarly journals Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Petr Vlcak ◽  
Ivan Jirka
Keyword(s):  
Coefficient Of Friction ◽  
Ion Beam ◽  
Reference Sample ◽  
Surface Hardness ◽  
Ti6al4v Alloy ◽  
Ion Beam Assisted Deposition ◽  
The Coefficient Of Friction ◽  
Nitrogen Ion ◽  
Ion Assistance ◽  
Carbon Based

The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

Process Optimization for Cylindrical Single-Crystal Silicon Mirror with a Tilted Incident Ion Beam Figuring

2020 ◽  
Vol 40 (12) ◽  
pp. 1222001
Author(s):  
宋辞 Song Ci ◽  
田野 Tian Ye ◽  
石峰 Shi Feng ◽  
张坤 Zhang Kun ◽  
沈永祥 Shen Yongxiang
Keyword(s):  
Single Crystal ◽  
Process Optimization ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Ion Beam Figuring

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Surface damages on single-crystal silicon during irradiation by a powerful ion beam

2012 ◽  
Vol 6 (2) ◽  
pp. 244-247 ◽  
Author(s):  
V. S. Kovivchak ◽  
T. V. Panova ◽  
O. V. Krivozubov ◽  
N. A. Davletkil’deev ◽  
E. V. Knyazev
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Surface Damages
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