Stresses in Films Deposited by Planar Magnetron Sputtering on Glass Substrates of Different Thickness

1988 ◽  
Vol 130 ◽  
Author(s):  
Zhi-Feng Zhou ◽  
Yu-Dian Fan
Keyword(s):  
Magnetron Sputtering ◽  
Magnetic Characteristics ◽  
Substrate Thickness ◽  
Back Side ◽  
Structure And Properties ◽  
Capacitance Change ◽  
Glass Substrates ◽  
Thin Film Thermocouple ◽  
Planar Magnetron ◽  
Different Thickness

AbstractStresses affect the structure and properties of the films significantly. In this paper, Co-Cr films were deposited by D.C. planar magnetron sputtering on rectangular glass plates of thickness varied from 0.18 to 2.00mam. The measurement of stress was performed by the bending plate technique with the detection of capacitance change. The temperature of the bending plate was measured by an Fe-Ni thin film thermocouple on the back side of the substrate. The experimental results showed that the stresses were all tensile, but in the films on the thicker substrates were smaller than that on the thinner ones. And apparently the temperature rise of the thicker substrates during deposition was lower than that of the thinner ones. The magnetic characteristics of the Co-Cr films related to the substrate thickness may be attributed to both stress and temperature difference in the films deposited on the substrates of different thickness.

Deposition of aluminum Oxynitride Films by Magnetron Sputtering: Effect of Bombardment and Substrate Heating on Structural and Mechanical Properties

1995 ◽  
Vol 388 ◽  
Author(s):  
Russell V. Smilgys ◽  
Eric Takamura ◽  
Irwin L. Singer ◽  
Steven W. Robey ◽  
Douglas A. Kirkpatrick
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Aluminum Oxynitride ◽  
X Ray Diffraction ◽  
Etch Pits ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Continuous Indentation

ABSTRACTAluminum oxynitride films, 1 μm thick, are deposited onto glass substrates by planar magnetron sputtering from an alumina target in a mixture of nitrogen and argon. one set of films is deposited onto glass substrates that are heat sunk to a holder, whose temperature is held below 100°C. a second set of films is deposited onto glass substrates that are mechanically clamped to a holder, whose temperature is allowed to rise up to 250°C. Characterization by continuous indentation testing, secondary electron microscopy, and x-ray diffraction reveals significant differences in mechanical properties and surface structure between the two sets of films. Films deposited with holder cooling have a smooth surface and no evidence of crystallinity; films deposited without holder cooling have etch pits on their surface that vary with position across the substrate. the later films show crystallinity and have twice the hardness and a 60% greater elastic modulus.

Structure and Properties of C-Axis Oriented AlN Films Reactively Deposited by DC Planar Magnetron Sputtering

1989 ◽  
Vol 167 ◽  
Author(s):  
Takakazu Takahashi ◽  
Fumio Takeda ◽  
Masahiko Naoe
Keyword(s):  
Magnetron Sputtering ◽  
Film Plane ◽  
Dielectric Constants ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Planar Magnetron ◽  
Diffraction Peaks ◽  
Ambient Gas

AbstractAluminum nitride (AlN) films have been deposited by reactive DC planar magnetron sputtering at a low substrate temperature of 80°C. An Al disk and either N2 or NH3 were used as a target and an ambient gas, respectively. In films deposited in N2, the c-axis of AlN crystallites was perpendicular to the film plane. On the other hand, in NH3, X-ray diffraction peaks from (100), (110) and (200) were observed. The surface and the cross-sectional microstructures of AlN films deposited in N2 were significantly different from that deposited in NH3. The surface of films deposited in NH3 was smoother than that deposited in N2. The transmittivity of films deposited in NH3 was superior to that deposited in N2 in wavelength of 275∼450 nm. Resistivities of films deposited in N2 and in NH3 were 1014sim;1015 Ω · cm. Dielectric constants of films deposited in N2, and of that deposited in NH3, were 9.7, and 9, respectively, in a frequency range of 20 kHz to 20 MHz. The structure and the properties of AlN films deposited by this method depended on kind of ambient gas.

scholarly journals Optical properties of CdO films prepared by DC planar magnetron sputtering

2014 ◽  
pp. 9-12
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Near Infrared ◽  
Infrared Region ◽  
Direct Band Gap ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Direct Band ◽  
Near Infrared Region ◽  
Cdo Films

CdOfilms have been produced on glass substrates by DC planar magnetron sputtering technique in Ar and O2 gases 1:4 and distance 6cm between cathode and anode and thickness 174 nm. It is observed from optical properties that the films possess transmittance 80% in visible and near infrared region of spectrum and direct band gap values in the rang 2.31-2.4 e V

The Origin of Stress in Co-Cr Alloy Thin Films Deposited by Magnetron Sputtering

1991 ◽  
Vol 239 ◽  
Author(s):  
Zhi-Feng Zhou ◽  
Yu-Dian Fan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Growth Process ◽  
Film Growth ◽  
Perpendicular Magnetic Recording ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Film Substrate ◽  
Defect Elimination ◽  
Deposition Conditions

ABSTRACTCo-Cr alloy thin films are considered as an applicable perpendicular magnetic recording medium, and their mechanical properties such as internal stress can not be neglected. In this experiment, Co-Cr films are deposited on glass substrates by D. C planar magnetron sputtering, and the effects of film thickness, Ni-Fe underlayer as well as substrate temperature on the stress are studied respectively. The stresses are all tensile in all cases, and the stress existing at the film-substrate interface is very small. According to the above experimental results and the structure analysis of the films, the atomic peening effect produced by the rebounded working gas atoms can be negligible, and the stress is thought to originate from the film growth process but not from the inter-facial effect. Therefore, the structural defect elimination model is proposed (here the defects mainly include vacancies and grain boundaries). With this model, the origin of the tensile stress as well as the relations between the stress and the deposition conditions are explained qualitatively.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

Thickness Dependent Structural and Optical Properties of Cadmium Selenide Thin Films

2013 ◽  
Vol 665 ◽  
pp. 159-167
Author(s):  
M.S. Jani ◽  
H.S. Patel ◽  
J.R. Rathod ◽  
K.D. Patel ◽  
V.M. Pathak ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
Structural And Optical Properties ◽  
Structural Investigations ◽  
Glass Substrates ◽  
Optical Bandgap Energy ◽  
Different Thickness

In this paper structural and optical properties of CdSe thin films with different thickness deposited by thermal evaporation under vacuum onto glass substrates are presented. The structural investigations performed by means of XRD technique showed that the films have a polycrystalline and hexagonal (würtzite) structure. The values of some important parameters of the studied films (absorption coefficient and optical bandgap energy) are determined from transmission spectra. The values of the optical bandgap energy (Eg) calculated from the absorption spectra, ranged between 1.67 - 1.74 eV.

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