Low Temperature GaAs Growth on GaAs and Si with Metal-Organic Molecular Beam Epitaxy Assisted by Hydrogen Plasma

1988 ◽  
Vol 144 ◽  
Author(s):  
Ikuo Suemune ◽  
Yasuhiro Kunitsugu ◽  
Yoshimitsu Tanaka ◽  
YAsuo Kan ◽  
Masamichi Yamanishi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Organic Compounds ◽  
Molecular Beam ◽  
Hydrogen Plasma ◽  
Selective Growth ◽  
Plasma Cleaning ◽  
Metal Organic ◽  
Low Temperature Gaas

ABSTRACTNew low-temperature cleaning and growth processes are presented using hydrogen plasma. Cleaning of GaAs and Si surfaces are possible above 200°C and 300°C, respectively. Single-domain GaAs thin films are successfully grown on Si at 400°C using metal-organic compounds for both Ga and As. Selective growth of GaAs is demonstrated at 400°C on a Si surface partially covered withSiO2.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Characterization and process effects of HfO2 thin films grown by metal-organic molecular beam epitaxy

2005 ◽  
Vol 123 (1) ◽  
pp. 20-30 ◽  
Author(s):  
Myoung-Seok Kim ◽  
Young-Don Ko ◽  
Minseong Yun ◽  
Jang-Hyuk Hong ◽  
Min-Chang Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Process Effects ◽  
Metal Organic

Photoreflectance study of Si delta‐doped low‐temperature GaAs grown by molecular beam epitaxy

1995 ◽  
Vol 77 (5) ◽  
pp. 2124-2127 ◽  
Author(s):  
T. M. Cheng ◽  
C. Y. Chang ◽  
T. M. Hsu ◽  
W. C. Lee ◽  
J. H. Huang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Gaas

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L405-L408 ◽  
Author(s):  
Cheng Chiang Phua ◽  
Tow Chong Chong ◽  
Wai Shing Lau
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Intermediate Layer ◽  
Molecular Beam ◽  
Crystalline Quality ◽  
Gaas On Si ◽  
Low Temperature Gaas

Temperature‐dependent transport properties ofn+GaAs/low‐temperature GaAs/n+GaAs structures grown by molecular beam epitaxy

1996 ◽  
Vol 79 (11) ◽  
pp. 8488-8492 ◽  
Author(s):  
Jenn‐Fang Chen ◽  
Nie‐Chuan Chen ◽  
Shih‐Yang Chiu ◽  
Pie‐yong Wang ◽  
Wei‐I Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Transport Properties ◽  
Molecular Beam ◽  
Temperature Dependent ◽  
Dependent Transport ◽  
Low Temperature Gaas
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