Computer Simulation of Ion Beam Enhanced Deposition of Titanium Nitride Films

1989 ◽  
Vol 157 ◽  
Author(s):  
Wang Xi ◽  
Zhou Jiankun ◽  
Chen Youshan ◽  
Liu Xianghuai ◽  
Zou Shichang
Keyword(s):  
Computer Simulation ◽  
Titanium Nitride ◽  
Film Growth ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Ion Source ◽  
Nitrogen Gas ◽  
Titanium Layer ◽  
Adsorption Of Nitrogen ◽  
Nitrogen Ions

ABSTRACTA Monte-Carlo computer simulation has been performed to describe, at atomic level, the growth of titanium nitride films formed by ion beam enhanced deposition (IBED). The simulation is based on a random target, fixed free path of moving particles and binary collisions. An alternate process of deposition of titanium atoms and implantation of nitrogen ions is applied instead of the actual continuous and synchronous process of IBED. According to the actual conditions, the adsorption of nitrogen gas, which is leaked out from the ion source, at the fresh titanium layer surface has been considered. In addition, the change of the composition profile and the density profile during film growth is taken into account. It is demonstrated that the width of the intermixed region between the film and substrate increases with the increase of the atomic arrival ratio, R, of implanted nitrogen ions to deposited titanium atoms. When the titanium deposition rate is low, the nitrogen concentration of the film is relatively insensitive to R, indicating that a dominant contribution to the nitrogen concentration is derived from the nitrogen gas leaked out from the ion source. The results obtained in this study are in agreement with the experimental measurements.

Ion Beam assisted Deposition of Titanium Nitride

1988 ◽  
Vol 128 ◽  
Author(s):  
G. K. Hubler ◽  
D. Vanvechten ◽  
E. P. Donovan ◽  
R. A. Kant
Keyword(s):  
Titanium Nitride ◽  
Partial Pressure ◽  
Ion Beam ◽  
Surface Adsorption ◽  
Active Surface ◽  
Sticking Coefficient ◽  
Adsorption Sites ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ions ◽  
Ambient Gas

ABSTRACTThe composition of titanium nitride films prepared by ion beam assisted deposition was studied as a function of the partial pressure of N2 gas in the deposition volume, and as a function of the impingement 'ratio of nitrogen ions (500 eV) to evaporated titanium atoms. The amount of nitrogen incorporated from the ambient gas was derived by subtraction of the fraction introduced by the ion beam. It is shown that the primary effects of ion bombardment are an increase in the sticking coefficient and a reduction in the number of active surface adsorption sites.

Investigation of Titanium Nitride Synthesized by Ion Beam Enhanced Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Zhou Jiankun ◽  
Liu Xianghuai ◽  
Chen Youshan ◽  
Zheng Zhihong ◽  
Huang Wei ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
High Hardness ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Low Friction ◽  
Oxygen Contamination ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Deposited Film

ABSTRACTTitanium nitride films have been synthesized at room temperature by alternate deposition of titanium and bombardment by nitrogen ions with an energy of 40KeV. The component depth profiles and the structure of titanium nitride films were investigated by means of RBS, AES, TEM, XPS and X-ray diffraction. The results showed that titanium nitride films formed by ion beam enhanced deposition (IBED) had columnar structure and were mainly composed of TiN crystallites with random orientation. The oxygen contamination in titanium nitride films prepared by IBED was less than that of the deposited film without nitrogen ion bombardment. It was confirmed that a significant intermixed layer exists at the interface. The thickness of this layer was about 40 nm for the film prepared on iron plate. The mechanical properties of the film have been investigated. The films formed by IBED exhibited high hardness, improved wear resistance and low friction.

Investigation of titanium nitride films prepared by ion-beam-assisted deposition at high Ar+/Ti ratio

1992 ◽  
Vol 268 ◽  
Author(s):  
J. H. Hsieh ◽  
D. E. Bush ◽  
R. A. Erck ◽  
G. R. Fenske ◽  
F. A. Nichols
Keyword(s):  
Titanium Nitride ◽  
Partial Pressure ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Preferred Orientation ◽  
Nitrogen Partial Pressure ◽  
Ion Beam Assisted Deposition ◽  
Reduced Nitrogen ◽  
Low Nitrogen

ABSTRACTTitanium nitride films were prepared by reactive ion beam assisted deposition (RIBAD) with Ar+/Ti ratios ranging from 1.0 to 2.3. The compositions, phases and textures of these films were studied by AES and XRD as a function of Ar+/Ti ratio and nitrogen partial pressure. The results indicate that the IBAD titanium nitride films deposited at high Ar+/Ti ratio and low nitrogen partial pressure may have reduced nitrogen concentration, (200) preferred orientation, and possibly contain the Ti2N phase.

Extraction of the ion beam from hollow cathode ion source. Experiment and computer simulation

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 649-654 ◽  
Author(s):  
M. Turek ◽  
A. Droździel ◽  
K. Pyszniak ◽  
J. Sielanko
Keyword(s):  
Computer Simulation ◽  
Hollow Cathode ◽  
Ion Beam ◽  
Ion Source

Ion Beam Epitaxy of in-situ Er-O Co-Doped Silicon Films

1996 ◽  
Vol 422 ◽  
Author(s):  
Morito Matsuoka ◽  
Shun-Ichi Tohno
Keyword(s):  
Metal Ion ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Source ◽  
Silicon Films ◽  
Co Doping ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Precipitation Formation

AbstractErbium-doped silicon films are grown by ion beam epitaxy (IBE) using an electric-mirror sputtering-type metal ion source in ultrahigh vacuum. In-situ erbium doping with concentrations ranging from 1×1016 to 6×1020 cm−3 is achieved by sputtering the erbium metal pellet with ions extracted from the silicon metal ion source. The oxygen concentration in the films is also controlled in-situ over the range from below 1×1018 to 2×1020 cm−3 by using argon gases containing 1 ppb to 100 ppm of oxygen impurities. The erbium incorporation probability drastically increases (by two or more orders of magnitude) when oxygen is contained in the argon gas during film growth. Erbium is selectively oxidized in the Si host. Erbium segregation and precipitation formation are well suppressed by the oxidation. Sharp and well-split photoluminescence is clearly observed in as-deposited films grown typically at 480°C with oxygen co-doping.

Investigation of conical anode – disc cathode ion source

2018 ◽  
Vol 96 (2) ◽  
pp. 194-201
Author(s):  
S. Abdel Samed ◽  
S.I. Radwan ◽  
H. El-Khabeary
Keyword(s):  
Discharge Current ◽  
Theoretical Calculations ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Experimental Results ◽  
Maximum Output ◽  
Nitrogen Gas ◽  
Beam Characteristics ◽  
Good Agreement

An axial direct-current conical anode – disc cathode ion source has been designed, constructed, and operated. The electrical discharge and the output ion beam characteristics are measured using nitrogen gas. It is found that at the optimum dimensions, pressure equal to 4.5 × 10−5 mm Hg and discharge current equal to 250 μA, a maximum output ion beam current equal to 91 μA can be obtained. A comparison between the experimental results and theoretical calculations of the output ion beam current values at the optimum dimensions and operating parameters for different discharge current of conical anode and disc cathode ion source using nitrogen gas is determined. It is found that a good agreement exists between the experimental results and theoretical calculations.

The Effect of Ion-Bombardment on the Formation of Voids During Deposition of a-Ge:H

1998 ◽  
Vol 507 ◽  
Author(s):  
F. Origo ◽  
P. Hammer ◽  
D. Comedi ◽  
I. Chambouleyron
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Source ◽  
Ion Beam Sputtering ◽  
Small Surface ◽  
Sputtering Deposition ◽  
Bonding Properties ◽  
Ir Detection ◽  
Beam Currents

ABSTRACTThe role of substrate ion bombardment on the structural and H bonding properties of hydrogenated amorphous germanium (a-Ge:H) films was studied by infrared (ir) spectroscopy. A Kaufman type ion source was used to produce an Ar1 beam directed towards a Ge target for a- Ge:H ion beam sputtering deposition in a H2-containing vacuum chamber. A low energy (100 eV) H2++Ar+ beam obtained from an additional ion source was allowed to impinge directly on the substrate during film growth at various beam currents.It was found that substrate bombardment by 100 eV ions favors the formation of voids, as deduced from the increasing contribution of the surface-like Ge-H stretching mode to the ir spectrum with increasing ion current. The void density was reduced below the ir detection limit by totally removing the ion beam on the substrate while keeping all other parameters fixed. For this condition, we observe no or very small surface-like contributions to the ir spectra, irrespective of substrate temperature (25-260°C) or growth rate used. A narrowing of the infrared Ge-H stretching mode peak is observed with increasing deposition temperature, indicating a concomitant tendency towards a more ordered structure.

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