Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique
Keyword(s):
Ion Beam
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ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.
2006 ◽
Vol 527-529
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pp. 1167-1170
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2009 ◽
Vol 156-158
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pp. 541-546
1989 ◽
Vol 115
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pp. 181-192
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2005 ◽
Vol 483-485
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pp. 359-364
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