Electronic Levels Induced by Irradiation in 4H-Silicon Carbide
2005 ◽
Vol 483-485
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pp. 359-364
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Keyword(s):
The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2 MeV. The electronic levels associated with the irradiation-induced defects were analyzed by current-voltage characteristics and deep level transient spectroscopy measurements up to 700 K. In the same temperature range the apparent free carrier concentration was measured by capacitance-voltage characteristics to monitor possible compensation effects due to the deep level associated to the induced defects. Introduction rate, enthalpy and capture cross-section of such deep levels were compared and some conclusions about the nature of the defects were drawn.
2006 ◽
Vol 527-529
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pp. 1167-1170
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2011 ◽
Vol 178-179
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pp. 130-135
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Keyword(s):