The Initial Stages of MBE Growth of InSb on GaAs(100) - A High Misfit Heterointerface

1989 ◽  
Vol 159 ◽  
Author(s):  
C.J. Kiely ◽  
A. Rockett ◽  
J-I. Chyi ◽  
H. Morkoc
Keyword(s):  
Three Dimensional ◽  
Misfit Strain ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Island Growth ◽  
Mbe Growth ◽  
Edge Type ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Square Array

ABSTRACTThe initial stages of heteroepitaxy of InSb on GaAs(100) grown by MBE have been studied by transmission electron microscopy. Three dimensional InSb island growth occurs in which the majority of the 14.6% misfit strain is accommodated by a square array of a/2<011= edge-type misfit dislocations. The implications of each island having a well defined defect array before coalescence into a continuous epilayer are discussed. Some 600-type a/2<101= interfacial defects and associated threading dislocations are also observed in coalesced films and possible reasons for their existence are explained. A strong asymmetrical distribution of planar defects in the InSb islands is observed and the origin of the asymmetry is discussed. Finally some evidence for local intermixing in the vicinity of the interface is presented.

Dislocation Behaviour in GexSi1-x Epilayers on (001)Si

1989 ◽  
Vol 160 ◽  
Author(s):  
Eric P. Kvam ◽  
D.M. Maher ◽  
C.J. Humphreys
Keyword(s):  
Dislocation Density ◽  
Film Thickness ◽  
Critical Thickness ◽  
Three Dimensional ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Island Growth ◽  
Edge Type ◽  
Dislocation Behaviour ◽  
Step Mechanism

AbstractWe have observed that the nature of misfit dislocations introduced near the critical thickness in GexSi1-x alloys on (001)Si changes markedly in the region 0.4 ≤ x ≤ 0.5. At or below the lower end of this compositional range, the observed microstructure is comprised almost entirely of 60° type dislocations, while at the high end, the dislocation structure is almost entirely Lomer edge type. Concurrent with this change, the dislocation density at the top of the epilayer varies by a factor of about 60X. Similarly, several other observables (e.g. dislocation length and spacing) also change appreciably.Part of the reason for the morphological variation seems to be a change in the source for dislocation introduction, in conjunction with a change in glide behaviour of dislocations as a function of film thickness. Evidence will be presented that indicates strain, as well as thickness, has a critical value for some dislocation introduction mechanisms, and that these together determine the resulting microstructure.Furthermore, it appears unlikely that the edge-type Lomer dislocations which appear at about x = 0.5 are either introduced directly, by climb, or grown in, as in the three-dimensional island growth and coalescence which occurs when x approaches unity. Instead, a two-step mechanism involving glissile dislocations is proposed and discussed.

Defects in Large-Misfit Heteroepitaxy

1988 ◽  
Vol 116 ◽  
Author(s):  
D.J. Eaglesham ◽  
M. Aindow ◽  
R.C. Pond
Keyword(s):  
Substrate Surface ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Island Growth ◽  
Island Nucleation ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Nucleation Mechanisms ◽  
Defect Nucleation ◽  
Inversion Domain Boundaries

AbstractA Transmission Electron Microscopy (TEM) study is presented of GaAs on Si (100) and CdTe on GaAs (100), and the implications for defect nucleation mechanisms are discussed. MOCVD GaAs/Si is shown to grow by island nucleation followed by 3D growth. Single islands are free of inversion domain boundaries (or “APBs”) implying that a single domain is able to grow over a demi-step on the substrate surface during this 3D growth. Misfit dislocations are shown to be edge type during island growth, with 60° type being generated at island junctions. The predominant threading dislocations are found to have inclined a/2 <110> Burgers vectors. The implied mechanisms for the generation of both misfit and threading dislocations are discussed. In MOCVD CdTe/GaAs the microstructure is shown to have a number of qualitatively similar features; in addition, study of this much larger misfit system allows us to deduce a possible explanation for misorientation effects in these systems.

A Systematic TEM and Rheed Investigation of the MBE Growth of InxGa1−xAs a Function of Composition

1990 ◽  
Vol 216 ◽  
Author(s):  
S.P. Edirisinghe ◽  
A.E. Staton-Bevan ◽  
D.W. Pashley ◽  
P. Fawcett ◽  
B.A. Joyce
Keyword(s):  
Buffer Layer ◽  
Misfit Strain ◽  
Growth Mode ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Mbe Growth

ABSTRACT0.15µm epilayers of InxGa1−xAs grown on GaAs (001) by MBE, having In concentrations in the range x = 0.05 - 0.30, have been investigated using RHEED and TEM. RHEED patterns indicate a 2-D growth mode for low In concentrations changing to Stranski-Krastanov growth for x > 0.30. TEM showed misfit dislocations for x > 0.05 only, which were found to relieve only a small part of the misfit strain. Although threading dislocations were rarely found in the epilayers, dislocations originating at the interface and penetrating the buffer layer were observed for 0.1 < x < 0.25.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Microstructural study of GaAs epitaxial layers on Ge(100) substrates

1995 ◽  
Vol 10 (4) ◽  
pp. 843-852 ◽  
Author(s):  
N. Guelton ◽  
R.G. Saint-Jacques ◽  
G. Lalande ◽  
J-P. Dodelet
Keyword(s):  
Electron Microscopy ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Antiphase Boundaries ◽  
Microstructural Study ◽  
Mismatch Strain ◽  
Transmission Electron

GaAs layers grown by close-spaced vapor transport on (100) Ge substrates have been investigated as a function of the experimental growth conditions. The effects on the microstructure of the surface preparation, substrate misorientation, and annealing were studied using optical microscopy and transmission electron microscopy. Microtwins and threading dislocations are suppressed by oxide desorption before deposition. Single domain GaAs layers have been obtained using a 50 nm thick double domain buffer layer on an annealed Ge substrate misoriented 3°toward [011]. The mismatch strain is mainly accommodated by dissociated 60°dislocations. These misfit dislocations extend along the interface by the glide of the threading dislocations inherited from the substrate, but strong interaction with antiphase boundaries (APB's) prevents them from reaching the interface. These results are discussed and compared with previous reports of GaAs growth on Ge(100).

TEM Study of strain states in III-V semiconductor epitaxial layers.

2001 ◽  
Vol 673 ◽  
Author(s):  
André ROCHER ◽  
Anne PONCHET ◽  
Stéphanie BLANC ◽  
Chantal FONTAINE
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
Misfit Strain ◽  
Gasb Layer ◽  
Transmission Electron ◽  
Moiré Fringes ◽  
Square Array ◽  
Plane View

ABSTRACTThe strain states induced by a lattice mismatch in epitaxial systems have been studied by Transmission Electron Microscopy (TEM) using the moiré fringe technique on plane view samples. For the GaSb/(001)GaAs system, moiré patterns suggest that the GaSb layer is free of stress and homogeneously relaxed by a perfect square array of Lomer dislocations. A 10 nm thick layer of GaInAs (20% In concentration) grown on (001)GaAs does not give any moiré fringes for all low-index Bragg reflections: this result indicates that the effective misfit strain does not correspond to the theoretical one described by the elastic theory. Segregation effects are expected to play an important role in the relaxation of the misfit strain.

Defect Characterization of InAs Films Grown by Two-Step MOCVD on (100) InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Plan View ◽  
Inp Substrates

ABSTRACTIn this paper we investigate the defect morphology and misfit strain in InAs films grown on (100) InP substrates using two-step metal organic chemical vapor deposition (MOCVD). High quality InAs films were obtained despite the 3.2% lattice-mismatch between the InAs film and the InP substrate. Cross-sectional and plan-view transmission electron microscopy has been used to characterize the ∼3μm thick InAs films. Almost all the lattice mismatch is accomodated by an orthogonal array of pure edge Lomer dislocations which are favored over the 60° type since they are more efficient in relieving misfit strain. In addition to misfit dislocations, threading dislocations were observed propagating through the film. Most of the threading dislocations were 60° type dislocations along the < 211 > and < 110 > directions on inclined {111} planes. The threading dislocations originate from island coalescence during film growth. High resolution electron microscopy shows the epitaxial relationship between the film and the substrate and reveals an abrupt and sharp interface with periodic dislocation cores.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface

1997 ◽  
Vol 500 ◽  
Author(s):  
V. Gopal ◽  
T. P. Chin ◽  
A. L. Vasiliev ◽  
J. M. Woodall ◽  
E. P. Kvam
Keyword(s):  
Misfit Dislocation ◽  
Lattice Mismatch ◽  
Electrical Characterization ◽  
Growth Conditions ◽  
Misfit Dislocations ◽  
Ir Detectors ◽  
Mbe Growth ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Edge Dislocations

ABSTRACTInAs is a narrow band gap semiconductor with potential for such applications as IR detectors, low temperature transistors, etc‥ However, the lack of suitable substrates has hampered progress in the development of InAs based devices. In the present study, InAs was grown by Molecular Beam Epitaxy on (001) GaP substrates. Though this system has a high lattice mismatch, (∼11%), certain MBE growth conditions result in 80% relaxed InAs layers on GaP with the mismatch accommodated predominantly by 90° pure edge dislocations. Misfit dislocation microstructures were studied using Transmission Electron Microscopy. Electrical characterization using lateral conductance and Hall effect measurements were also performed. Preliminary results indicate the possibility of misfit dislocation related conductivity. The possible correlation between interface structure and electrical properties is discussed.

Misfit Dislocations and Elastic Relaxation

1995 ◽  
Vol 399 ◽  
Author(s):  
H.P Strunk ◽  
S. Christiansen ◽  
M. Albrecht
Keyword(s):  
Driving Forces ◽  
Maximum Shear Stress ◽  
Strain Tensor ◽  
Three Dimensional ◽  
Local Strain ◽  
Misfit Strain ◽  
Relaxation Mechanism ◽  
Misfit Dislocations ◽  
Thermodynamical Equilibrium ◽  
Three Dimensional Finite Element

ABSTRACTPrior to relaxation of misfit strain by formation of misfit dislocations, a growing heteroepitaxial layer can relax elastically by forming surface undulations called ripples. With increasing amplitude of the ripples the misfit strain and thus stress fields grow markedly inhomogeneous, and dislocation formation may thus be triggered in areas of maximum shear stress. The surface directly above such a new dislocation then represents a band of preferential growth and develops into a ridge, which in turn redistributes the strain in the growing layer. This interwoven elastic/plastic relaxation mechanism can comparably easily be deduced from transmission electron and atomic force microscopy studies of SiGe layers grown onto silicon by liquid phase epitaxy. This growth technique exerts only very small driving forces and thus operates very near thermodynamical equilibrium. The local strain tensor and strain energy density are calculated for the actual layer geometries by three dimensional finite element method and provide for quantification of the mechanism.

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