PHOTOLUMINESCENCE STUDIES IN CuInxGa1-xSe2 FILMS PREPARED BY GRAPHITE BOX ANNEALING OF In/Ga/Cu/Se STACKED ELEMENTAL LAYERS

1999 ◽  
Vol 13 (05) ◽  
pp. 153-158
Author(s):  
S. N. KUNDU ◽  
S. CHAUDHURI ◽  
A. K. PAL
Keyword(s):  
Thermal Evaporation ◽  
Pair Formation ◽  
Acceptor Pair ◽  
Pl Spectra ◽  
Glass Substrates ◽  
Excitonic Transition ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Photoluminescence Studies

CuIn x Ga 1-x Se 2 films were synthesized by graphite box annealing of In/Ga/Cu/Se stacked elemental layers deposited by thermal evaporation onto sodalime glass substrates. Photoluminescence (PL) studies were carried out in near stoichiometric and copper-rich films with Ga/(In+Ga) ratios varying between 0.24–0.29. The PL spectra were dominated by peaks at ~1.19 eV and 0.87 eV with a shoulder at ~0.84 eV. There was also a peak around 1.3 eV which could be assigned to the absorption from the split-off band. The transitions at ~1.19 eV and 0.87 eV were due to excitonic transition and donor-acceptor pair formation respectively.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Fabrication and Luminescence Properties of Monoclinic Gallium Oxide (β-Ga2O3) Nanostructures

2006 ◽  
Vol 951 ◽  
Author(s):  
Aurangzeb Khan ◽  
Wojciech M. Jadwisienczak ◽  
Henryk J. Lozykowski ◽  
Martin E. Kordesch
Keyword(s):  
Gallium Oxide ◽  
Luminescence Band ◽  
Thermal Evaporation ◽  
Acceptor Pair ◽  
Evaporation And Condensation ◽  
Argon Flow ◽  
Exciton Recombination ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Micro Pillars

ABSTRACTβ-Ga2O3 nanostructures including nanowires, nanorods, nano and micro-pillars, nanosheets and nanobelts were successfully fabricated by simple and efficient thermal evaporation and condensation technique under argon flow.. The structures have been investigated by the electron microscope, XRD and EDX techniques and shown that nanostructures are predominatly β-Ga2O3 without other crystallographic phases. Cathodouminescence of as-grown nanostructures was investigated in the 10-300 K temperature range and exhibit luminescence band centered at 485 nm at 300 K due to donor-acceptor pair recombination. A new luminescence band centered at 387 nm developes at temperature below 150 K due to self-trapped exciton recombination.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials
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