Characteristics of μc-Si:H for Si Heterojunction Bipolar Transistors

1989 ◽  
Vol 164 ◽  
Author(s):  
H. Fujioka ◽  
M. Ito ◽  
K. Takasaki
Keyword(s):  
Thermal Stability ◽  
Hydrogen Concentration ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doping ◽  
Thermally Stable ◽  
Fluorine Doping ◽  
Hydrogen Atoms ◽  
Thermal Stability Of ◽  
Crystalline Growth

AbstractTo improve the thermal stability of the Si heterojunction bipolar transistors (HBTs), we studied the effect of carbon and fluorine doping on μc-Si:H characteristics. We found that carbon doping suppresses crystalline growth and increases the hydrogen concentration in the film, and that fluorine atoms are more thermally stable than hydrogen atoms. We confirmed that carbon or fluorine doping is promising for use with the μc-Si:H HBT.

Properties and Effects of Hydrogen in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
S.J. Pearton ◽  
H. Cho ◽  
F. Ren ◽  
J.-I. Chyi ◽  
J. Han ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Residual Hydrogen ◽  
Diffusion Characteristics ◽  
Significant Difference ◽  
Device Structures ◽  
The Status ◽  
The Difference ◽  
Thermal Stability Of

AbstractThe status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mgdoped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

Novel Multi-Finger Power HBTs with Non-Uniform Segmented Emitter for Thermal Stability Enhancement

2012 ◽  
Vol 229-231 ◽  
pp. 832-836 ◽  
Author(s):  
D.Y. Jin ◽  
D. Lu ◽  
W.R. Zhang ◽  
Q. Fu ◽  
Y.J. Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Heterojunction Bipolar Transistors ◽  
Heat Dissipation ◽  
Current Density Distribution ◽  
Bipolar Transistors ◽  
Electrical Model ◽  
Collector Current ◽  
The Difference ◽  
Stability Enhancement ◽  
Thermal Stability Of

With the aid of a two-dimensional thermal-electrical model, the thermal stability of multi-finger power heterojunction bipolar transistors (HBTs) with uniform segmented emitter, and non-uniform segmented emitter are studied. It shows that both of them could lower the peak temperature and improve the non-uniformity of the collector current density distribution, and thus improve the thermal stability, compared with an HBT which has traditional non-segmented emitter structure. At the same time, the improvement capability of thermal stability for HBT with non-uniform segmented emitter is superior to that of HBT with uniform segmented emitter, ascribing to selectively divide the emitter fingers into various segments according to the difference of heat dissipation capability in emitter fingers. Furthermore, the improvement capability of thermal stability for HBT with non-uniform segmented emitter is enhanced exponentially as segment spacing increases. However, for HBT with uniform segmented emitter, the ability is less sensitive to the increasing of the segment spacing as it exceeds 6μm. Therefore, the technique of non-uniform segmented emitter is a better method for enhancing the thermal stability of power HBTs.

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

2003 ◽  
Vol 32 (9) ◽  
pp. 948-951
Author(s):  
Y. M. Hsin ◽  
H. T. Hsu ◽  
K. P. Hseuh ◽  
W. B. Tang ◽  
C. C. Fan ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

scholarly journals The Thermal Stability of Aviation Fuel

1984 ◽  
Author(s):  
J. S. Mills ◽  
F. R. Edwards
Keyword(s):  
Thermal Stability ◽  
Research Tool ◽  
Aviation Fuel ◽  
Engine Oil ◽  
Thermally Stable ◽  
Fuel System ◽  
Flow Rates ◽  
Aircraft Fuel ◽  
Oil Cooler ◽  
Thermal Stability Of

The propensity of aviation turbine fuels to produce deposits in the oil-cooler and filter sections of aircraft fuel systems has been examined using a rig that simulates the fuel system of an aircraft and which employs realistic flow rates. All the fuels examined were found to be thermally stable up to temperatures in excess of those currently attained in engine oil coolers. Comparison with results obtained with the JFTOT indicates that this is not suited for use as a research tool.

scholarly journals Properties and Effects of Hydrogen in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 540-550 ◽  
Author(s):  
S.J. Pearton ◽  
H. Cho ◽  
F. Ren ◽  
J.-I. Chyi ◽  
J. Han ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Residual Hydrogen ◽  
Diffusion Characteristics ◽  
Significant Difference ◽  
Device Structures ◽  
The Status ◽  
The Difference ◽  
Thermal Stability Of ◽  
Mg Doped

The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mg-doped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

Synthesis and thermal stability of perovskite alkali metal strontium borohydrides

2016 ◽  
Vol 45 (2) ◽  
pp. 831-840 ◽  
Author(s):  
Kasper T. Møller ◽  
Morten B. Ley ◽  
Pascal Schouwink ◽  
Radovan Černý ◽  
Torben R. Jensen
Keyword(s):  
Thermal Stability ◽  
Alkali Metal ◽  
Thermally Stable ◽  
Perovskite Type ◽  
Thermal Stability Of

Synthesis of new thermally stable perovskite-type metal strontium borohydrides, MSr(BH4)3 (M = K, Rb, Cs).

Effect of lithium and fluorine doping on the electrochemical and thermal stability of LiNi0.5Mn1.5O4 spinel cathode material

2015 ◽  
Vol 639 ◽  
pp. 346-351 ◽  
Author(s):  
Haiyan Li ◽  
Ying Luo ◽  
Jingying Xie ◽  
Quansheng Zhang ◽  
Liqin Yan
Keyword(s):  
Thermal Stability ◽  
Cathode Material ◽  
Fluorine Doping ◽  
Spinel Cathode ◽  
Thermal Stability Of
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