Intrinsic Stress of Pecvd Silicon Oxynitride Films Deposited in a Hot-Wall Reactor

1990 ◽  
Vol 188 ◽  
Author(s):  
K. Aite ◽  
R. Koekoek
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Systematic Investigation ◽  
Silicon Oxynitride ◽  
Intrinsic Stress ◽  
Refractive Indices ◽  
Optimal Conditions ◽  
Annealing Temperatures ◽  
Chemical Vapor Deposited ◽  
Deposited Films

ABSTRACTPlasma enhanced chemical vapor deposited ( PECVD ) silicon oxynitride films with refractive indices varying from 1.65 to 1.85 have been deposited in a hot-wall reactor using a SiH4/NH3/N2O gas mixture. A systematic investigation of the variation of the intrinsic stress of the deposited films with the parameters of deposition and the properties of the films, has been carried out. Our results show that silicon oxynitride films deposited in optimal conditions can support annealing temperatures of 900°C without cracking. The mechanical stresses in the films were determined by the Newton's fringes technique and a surface profiler. The film thickness was measured by ellipsometry at a wavelength of 632.8 nm. Fourier transform infrared spectroscopy ( FTIR ) was used to measure the hydrogen content of the films. The composition of the silicon oxynitride films was determined by Auger electron spectroscopy ( AES ) and Rutherford backscattering spectrometry ( RBS ).

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

2006 ◽  
Vol 37 (1) ◽  
pp. 64-70 ◽  
Author(s):  
A. Szekeres ◽  
T. Nikolova ◽  
S. Simeonov ◽  
A. Gushterov ◽  
F. Hamelmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Chemical Vapor Deposited ◽  
Alternative Material

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

2010 ◽  
Vol 663-665 ◽  
pp. 336-339
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Xiang Wang ◽  
Yi Xiong Zhang ◽  
Chao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Maximum Intensity ◽  
Silicon Oxynitride ◽  
Very High Frequency ◽  
Annealing Temperatures ◽  
Very High

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

A Low Temperature Photonic Crystal Technology for Integration with Modern CMOS Technologies

2007 ◽  
Vol 990 ◽  
Author(s):  
Khadijeh Bayat ◽  
Mahdi Farrokh Baroughi ◽  
Sujeet K. Chaudhuri ◽  
Safieddin Safavi-Naeini
Keyword(s):  
Photonic Crystal ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Gas Phase ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Refractive Indices ◽  
Optical Integrated Circuits ◽  
Silicon Based

ABSTRACTIn this paper, low temperature amorphous silicon oxynitride (a-SixOyNz:H) thin film technology is proposed for implementation of CMOS compatible photonic crystal (PC) based optical integrated circuits (OICs). The a-SixOyNz films of different refractive indices were developed by plasma enhanced chemical vapor deposition (PECVD) technique using silane, nitrous oxide, and ammonia as gas phase precursors at 300°C. The films with refractive index between 1.43 − 1.75 were obtained by changing gas flow ratios. Such thin films can be used as cladding and core layers in photonic crystal structure.The bandgap and guiding properties of the a-SixOyNz based PCs were simulated and was shown that the a-SixOyNz:H based PC technology offers larger feature sizes than a conventional silicon based photonic crystals.

Optical properties of plasma‐enhanced chemical vapor deposited silicon‐oxynitride films

1987 ◽  
Vol 62 (11) ◽  
pp. 4538-4544 ◽  
Author(s):  
Y. Cros ◽  
J. C. Rostaing ◽  
J. Peisner ◽  
G. Leveque ◽  
C. Ance
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposited
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