Reduction of Internal Stress of a-Si:H Films by in Situ Measurements of Optical Emission Intensity from SiH4 Plasma

1990 ◽  
Vol 192 ◽  
Author(s):  
K. Tamahashi ◽  
M. Wakagi ◽  
F. Ishikawa ◽  
T. Kaneko ◽  
K. Tamura ◽  
...  
Keyword(s):  
Internal Stress ◽  
Power Density ◽  
Emission Intensity ◽  
Optical Emission ◽  
Deposition Process ◽  
Rf Power ◽  
Stress Changes ◽  
Hydrogenated Amorphous ◽  
Emission Intensity Ratio

ABSTRACTA parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified that the internal stress changes from tension to compression as a function of supplied rf power density during deposition process. Supplied rf power density is closely connected to H o and SiH* optical emission intensity ratio (H α /SiH* ) of CVD plasma. Ve find that the internal stress can be reduced remarkably by controlling this ratio to 0.3. This H α/SiH* parameter has a superiority that the internal stress can be in situ controlled.

RF Power Dependence of the Material Properties of PECVD Silicon Dioxide

1989 ◽  
Vol 165 ◽  
Author(s):  
J. D. Chapple-Sokol ◽  
E. Tiemey ◽  
J. Batey
Keyword(s):  
Nitrous Oxide ◽  
Silicon Dioxide ◽  
Power Density ◽  
Material Properties ◽  
Deposition Process ◽  
Power Dependence ◽  
Rf Power ◽  
Deposition Rates ◽  
Physical Integrity ◽  
Silane Concentration

AbstractSilicon dioxide films deposited from the PECVD reaction of silane and nitrous oxide in the presence of helium were studied to determine the effects of RF power on the deposition process. Increased RF power density yielded oxides which were structurally and chemically more homogeneous. The combination of elevated power density with increased silane concentration resulted in the deposition of films of high electrical and physical integrity at high deposition rates.

scholarly journals Effect of Cr Atom Plasma Emission Intensity on the Characteristics of Cr-DLC Films Deposited by Pulsed-DC Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 608
Author(s):  
Guang Li ◽  
Yi Xu ◽  
Yuan Xia
Keyword(s):  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Gas Flow ◽  
Optical Emission ◽  
Scratch Test ◽  
Deposition Process ◽  
Plasma Emission ◽  
Cross Sectional ◽  
Pulsed Dc ◽  
Plasma Emission Intensity

A pulsed-dc (direct current) magnetron sputtering with a plasma emission monitor (PEM) system was applied to synthesize Cr-containing hydrogenated amorphous diamond-like carbon (Cr-DLC) films using a large-size industrial Cr target. The plasma emission intensity of a Cr atom at 358 nm wavelength was characterized by optical emission spectrometer (OES). C2H2 gas flow rate was precisely adjusted to obtain a stable plasma emission intensity. The relationships between Cr atom plasma emission intensity and the element concentration, cross-sectional morphology, deposition rate, microstructure, mechanical properties, and tribological properties of Cr-DLC films were investigated. Scanning electron microscope and Raman spectra were employed to analyze the chemical composition and microstructure, respectively. The mechanical and tribological behaviors were characterized and analyzed by using the nano-indentation, scratch test instrument, and ball-on-disk reciprocating friction/wear tester. The results indicate that the PEM system was successfully used in magnetron sputtering for a more stable Cr-DLC deposition process.

scholarly journals A simple process step for tuning the optical emission and ultraviolet photosensing properties of sol–gel ZnO film

RSC Advances ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 694-703 ◽  
Author(s):  
Shuvaraj Ghosh ◽  
Durga Basak
Keyword(s):  
Emission Intensity ◽  
Intensity Ratio ◽  
Sol Gel ◽  
Optical Emission ◽  
Zno Films ◽  
Zno Film ◽  
Process Step ◽  
Simple Process ◽  
Emission Intensity Ratio

An enhanced UV/VIS emission intensity ratio and UV photoresponse have been evidenced in the rapidly cooled sol–gel ZnO films.

Morphological characteristics and optical properties of hydrogenated amorphous silicon thin films

2016 ◽  
Vol 30 (12) ◽  
pp. 1650140
Author(s):  
Haihua Tang ◽  
Shuang Liu ◽  
Xiang Zhou ◽  
Yunfei Liu ◽  
Dejun Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Power Density ◽  
Energy Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Morphological Characteristics ◽  
Rf Power ◽  
Optical Energy Gap ◽  
Reaction Pressure ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films were prepared by radio frequency (RF) plasma enhanced chemical vapor deposition (RF-PECVD) technique with silane (SiH[Formula: see text] as reactive gas. The influence of process parameters on the morphological characteristics and optical properties of a-Si:H thin films were systematically investigated. When the RF power density was taken as the only variable, it firstly improves the smoothness of the surface with increasing the RF power density below the value of 0.17 W/cm2, and then exhibits an obvious degradation at further power density. The refractive index, extinction coefficient, optical energy gap initially increase and reach a maximum at 0.17 W/cm2, followed by a significant decrease with further RF power density. When the RF power density was taken as the only variable, the surface of a-Si:H thin films become smoother by increasing the reaction pressure in the investigated range (from 50 Pa to 140 Pa), and the refractive index, extinction coefficient, optical energy gap increase with increasing of reaction pressure. The effect of RF power density and the reaction pressure on the morphological characteristics and optical properties of a-Si:H thin films was obtained, contributing to the further studies of the performance and applications of a-Si:H thin films.

Sign in / Sign up

Export Citation Format

Share Document