Columnar Epitaxy of Hexagonal and Orthorhombic Silicides on Si(111)

1990 ◽  
Vol 198 ◽  
Author(s):  
R.W. Fathauer ◽  
C.W. Nieh ◽  
Q.F. Xiao ◽  
Shin Hashimoto
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Epitaxial Silicon ◽  
High Quality ◽  
Columnar Grains ◽  
Lattice Matched

ABSTRACTColumnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultra-high vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840°C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)//Si(111), with PtSi[001]//Si<110>.

Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 16 (10) ◽  
pp. 750-752 ◽  
Author(s):  
Zhen Qi ◽  
Jing-yun Huang ◽  
Zhi-zhen Ye ◽  
Huan-ming Lu ◽  
Wei-hua Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Quality

High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

1987 ◽  
Vol 95 ◽  
Author(s):  
Shinya Tsuda ◽  
Hisao Haku ◽  
Hisaki Tarui ◽  
Takao Matsuyama ◽  
Katsunobu Sayama ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Photovoltaic Effect ◽  
High Vacuum ◽  
Reaction Chamber ◽  
Wide Bandgap ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Films

AbstractIn order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

Deposition of a-Si:H Devices in a RTR System for Photovoltaic and Macroelectronic Applications

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Scholz ◽  
D. Peros ◽  
M. Böhm
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Molecular Flow ◽  
Metal Contacts ◽  
High Quality ◽  
First Results

AbstractThis work presents first results of potential manufacturing processes for integrated series connected hydrogenated amorphous silicon (a-Si:H) thin film solar modules and/or pindiode/TFT based macroelectronic circuits on flexible tapes. A RTR (Reel-To-Reel) deposition system on laboratory scale has been built, The system consists of seven metal sealed LIHV stinless steel chambers to obtain ultra high vacuum as a basis for high quality a-Si:H layers, in order to support continuous movement of the tape in the RTR process the chambers cannot be isolated from each other. The necessary pressure difference between the sputtering chambers and the PECVD (Plasma Enhanced Chemical Vapor Deposition) chambers is provided by pressure stages. They are optimized for high molecular flow resistance without any influence on the moving substrate tape. The back metal contacts and the semitransparent TCO (Transparent Conductive Oxide) contacts are deposited by rf magnetron sputtering, the a-Si:H film system is deposited by PECVD. Parallel to the film deposition a Nd:YAG laser patterning system is coupled into one chamber. This allows for instance a total manufacturing of integrated series connected solar modules in one system without breaking the vacuum. Our present investigations focus on the deposition of doped and intrinsic high quality a-Si:H based layers in neighboring chambers. The quality of semiconducting films deposited in adjacent chambers is studied with regard to potential contamination effects.

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

2021 ◽  
Vol 2 (4) ◽  
pp. 482-494
Author(s):  
Jignesh Vanjaria ◽  
Venkat Hariharan ◽  
Arul Chakkaravarthi Arjunan ◽  
Yanze Wu ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Film Growth ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Single Step ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
High Quality ◽  
X Ray

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

2001 ◽  
Vol 90 (1) ◽  
pp. 512-514 ◽  
Author(s):  
S. Guha ◽  
E. Cartier ◽  
N. A. Bojarczuk ◽  
J. Bruley ◽  
L. Gignac ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Atomic Beam ◽  
Gate Dielectrics ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Atomic Beam Deposition ◽  
Beam Deposition

Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN

2003 ◽  
Vol 798 ◽  
Author(s):  
Jun Suda ◽  
Hiroyasu Yamashita ◽  
Robert Armitage ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Surface ◽  
High Vacuum ◽  
Surface Preparation ◽  
High Energy ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Preparation Methods ◽  
Thermal Cleaning

ABSTRACTZirconium diboride (ZrB2) is a promising lattice-matched substrate for GaN-based materials. A key issue to realize high-quality heteroepitaxial growth is preparation of the substrate surface. The ZrB2 surface was studied by x-ray photoemission spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). XPS results indicated the presence of both ZrO2 and ZrB2 on the as-received substrate surface. Thermal cleaning at 1000°C in ultra-high vacuum, Ar+ ion sputtering, and wet chemical treatments were examined as surface preparation methods. After treatment with HF acid, the O peak intensity was much reduced. The combination of HF treatment and thermal cleaning resulted in sharp and intense RHEED from the ZrB2 surface. GaN grown on the surface by molecular-beam epitaxy exhibited intense photoluminescence, suggesting that this treatment is effective to obtain high-quality GaN on ZrB2 substrates.

Epitaxial CeO2 on Silicon Substrates and the Potential of Si/CeO2/Si for SOI Structures

1997 ◽  
Vol 474 ◽  
Author(s):  
A. H. Morshed ◽  
S. X. Liu ◽  
R. Leonard ◽  
F. G. Mcintosh ◽  
N. A. El-Masry ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
High Vacuum ◽  
Silicon On Insulator ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Silicon Substrates ◽  
Cubic Structure ◽  
Lattice Matched ◽  
Initial Results

ABSTRACTCeO2 is nearly lattice matched to Si and has the CaF2 cubic structure thus it offers the potential for the epitaxial growth of an insulating film on Si. Laser ablation of a CeO2 target in an ultra high vacuum system was used for the deposition of single crystal CeO2. The effect of post growth thermal and rapid thermal annealing in O2, N2 and Ar atmosphere was found to have pronounced effects on the electrical properties measured by C-V and the optical properties measured by photoluminescence.We report on our initial results for the growth of epitaxial Si on the deposited CeO2 using low pressure CVD. Both RHEED and TEM studies showed that single crystal epitaxial Si was deposited on CeO2. The details of the Si deposition on CeO2 films for potential of SOI (silicon on insulator) structures will be discussed.

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