One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

2021 ◽  
Vol 2 (4) ◽  
pp. 482-494
Author(s):  
Jignesh Vanjaria ◽  
Venkat Hariharan ◽  
Arul Chakkaravarthi Arjunan ◽  
Yanze Wu ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Film Growth ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Single Step ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
High Quality ◽  
X Ray

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

Deposition of a-Si:H Devices in a RTR System for Photovoltaic and Macroelectronic Applications

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Scholz ◽  
D. Peros ◽  
M. Böhm
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Molecular Flow ◽  
Metal Contacts ◽  
High Quality ◽  
First Results

AbstractThis work presents first results of potential manufacturing processes for integrated series connected hydrogenated amorphous silicon (a-Si:H) thin film solar modules and/or pindiode/TFT based macroelectronic circuits on flexible tapes. A RTR (Reel-To-Reel) deposition system on laboratory scale has been built, The system consists of seven metal sealed LIHV stinless steel chambers to obtain ultra high vacuum as a basis for high quality a-Si:H layers, in order to support continuous movement of the tape in the RTR process the chambers cannot be isolated from each other. The necessary pressure difference between the sputtering chambers and the PECVD (Plasma Enhanced Chemical Vapor Deposition) chambers is provided by pressure stages. They are optimized for high molecular flow resistance without any influence on the moving substrate tape. The back metal contacts and the semitransparent TCO (Transparent Conductive Oxide) contacts are deposited by rf magnetron sputtering, the a-Si:H film system is deposited by PECVD. Parallel to the film deposition a Nd:YAG laser patterning system is coupled into one chamber. This allows for instance a total manufacturing of integrated series connected solar modules in one system without breaking the vacuum. Our present investigations focus on the deposition of doped and intrinsic high quality a-Si:H based layers in neighboring chambers. The quality of semiconducting films deposited in adjacent chambers is studied with regard to potential contamination effects.

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

1998 ◽  
Vol 533 ◽  
Author(s):  
P. M. Mooney ◽  
J. O. Chu ◽  
J. A. Ott ◽  
J. L. Jordan-Sweet ◽  
B. S. Meyerson ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Wafer Cleaning ◽  
Device Structures

AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 16 (10) ◽  
pp. 750-752 ◽  
Author(s):  
Zhen Qi ◽  
Jing-yun Huang ◽  
Zhi-zhen Ye ◽  
Huan-ming Lu ◽  
Wei-hua Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Quality

scholarly journals Selective Growth of Al2O3 on Size-Selected Platinum Clusters by Atomic Layer Deposition

2019 ◽  
Author(s):  
Timothy J. Gorey ◽  
Yang Dai ◽  
Scott Anderson ◽  
Sungsik Lee ◽  
Sungwon Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Atomic Layer ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Dimensional Structure ◽  
Alumina Layer ◽  
X Ray ◽  
Layer Deposition

In heterogeneous catalysis, atomic layer deposition (ALD) has been developed as a tool to stabilize and reduce carbon deposition on supported nanoparticles. Here, we discuss use of high vacuum ALD to deposit alumina films on size-selected, sub-nanometer Pt/SiO2 model catalysts. Mass-selected Pt24 clusters were deposited on oxidized Si(100), to form model Pt24/SiO2 catalysts with particles shown to be just under 1 nm, with multilayer three dimensional structure. Alternating exposures to trimethylaluminum and water vapor in an ultra-high vacuum chamber were used to grow alumina on the samples without exposing them to air. The samples were probed in situ using X-ray photoelectron spectroscopy (XPS), low-energy ion scattering spectroscopy (ISS), and CO temperature-programmed desorption (TPD). Additional samples were prepared for ex situ experiments using grazing incidence small angle x-ray scattering spectroscopy (GISAXS). Alumina growth is found to initiate at least 60 times more efficiently at the Pt24 cluster sites, compared to bare SiO2/Si, with a single ALD cycle depositing a full alumina layer on top of the clusters, with substantial additional alumina growth initiating on SiO2 sites surrounding the clusters. As a result, the clusters were completely passivated, with no exposed Pt binding sites.

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).

1987 ◽  
Vol 105 ◽  
Author(s):  
Sang S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Semiconductor Surface ◽  
Remote Plasma

AbstractWe have constructed an Ultra High Vacuum (UHV) multichamber system and have deposited ‘gate quality’ silicon dioxide by the remote plasma enhanced chemical vapor deposition (Remote PECVD) process at low substrate temperatures (Ts ≤400 °C). Native oxides and other surface contaminants are removed under ultra high vacuum (UHV) conditions and the character of the semiconductor surface is determined prior to film deposition using in-situ Reflection High Energy Electron Defraction (RHEED). Measurents made on MOS structures of capacitance-voltage, current-voltage, field break-down, hysteresis, and mobile ion drift indicate that these films are ‘comparable’ to thermally (Ts >1100 °C) grown oxides. The structural properties of the films arg studied by ir spectroscopy and ellipsometry.

The Dependence of ETCH Pit Density on the Interfacial Oxygen Levels in Thin Silicon Layers Grown by Ultra High Vacuum Chemical Vapor Deposition

1992 ◽  
Vol 259 ◽  
Author(s):  
Manu J. Tejwani ◽  
Paul A. Ronsheim
Keyword(s):  
Power Law ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Etch Pit Density ◽  
Oxygen Levels ◽  
Etch Pit ◽  
Thin Silicon ◽  
Interfacial Oxygen

ABSTRACTFor low temperature silicon epitaxy it is not only important to have an oxygen free environment during growth but also an initial silicon surface free of trace concentrations of oxygen, carbon and other impurities. Variations in the pre-clean process (using the standard ex-situ aqueous hydrofluoric acid dip) used for ultra high vacuum chemical vapor depostion (UHVCVD) of silicon, result in interfacial oxygen levels ranging from 2 × 1012atoms/cm2 to 1014atoms/cm2 as measured by secondary ion ion mass spectroscopy (SIMS). Using a dilute Schimmel etch we have delineated the dislocations in the thin silicon epitaxial layers grown by UHVCVD. Correlation of the etch pit density to the interfacial oxygen levels suggests a power law dependence. Plausibility arguments are presented to explain this power law dependence.

scholarly journals Selective Growth of Al2O3 on Size-Selected Platinum Clusters by Atomic Layer Deposition

2019 ◽  
Author(s):  
Timothy J. Gorey ◽  
Yang Dai ◽  
Scott Anderson ◽  
Sungsik Lee ◽  
Sungwon Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Atomic Layer ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Dimensional Structure ◽  
Alumina Layer ◽  
X Ray ◽  
Layer Deposition

In heterogeneous catalysis, atomic layer deposition (ALD) has been developed as a tool to stabilize and reduce carbon deposition on supported nanoparticles. Here, we discuss use of high vacuum ALD to deposit alumina films on size-selected, sub-nanometer Pt/SiO2 model catalysts. Mass-selected Pt24 clusters were deposited on oxidized Si(100), to form model Pt24/SiO2 catalysts with particles shown to be just under 1 nm, with multilayer three dimensional structure. Alternating exposures to trimethylaluminum and water vapor in an ultra-high vacuum chamber were used to grow alumina on the samples without exposing them to air. The samples were probed in situ using X-ray photoelectron spectroscopy (XPS), low-energy ion scattering spectroscopy (ISS), and CO temperature-programmed desorption (TPD). Additional samples were prepared for ex situ experiments using grazing incidence small angle x-ray scattering spectroscopy (GISAXS). Alumina growth is found to initiate at least 60 times more efficiently at the Pt24 cluster sites, compared to bare SiO2/Si, with a single ALD cycle depositing a full alumina layer on top of the clusters, with substantial additional alumina growth initiating on SiO2 sites surrounding the clusters. As a result, the clusters were completely passivated, with no exposed Pt binding sites.

Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD

2002 ◽  
Vol 742 ◽  
Author(s):  
C. Calmes ◽  
V. Le ◽  
D. Bouchier ◽  
S. E. Saddow ◽  
V. Yam ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
First Results ◽  
Ge Quantum Dots

AbstractWe report our first results using a ultra high vacuum chemical vapor deposition (UHV-CVD) system to form Ge quantum dots on off-axis SiC substrates. Pure SiH4 and hydrogen-diluted GeH4 were used as gas precursors. The SiC substrates were chemically cleaned using the modified RCA process and the SiO2 layer was removed in-situ under a low SiH4 flow rate at a temperature between 1030°C and 1080°C. The Ge quantum dots were grown at a temperature of 750°C. In-situ reflection high-energy electron diffraction (RHEED) was used to monitor the surface cleaning and the Ge quantum dot growth. Ex-situ scanning electron microscope and atomic force microscopy were used to confirm the presence of Ge dots. The observed dots are smaller (350 Å width and 100 Å height) than similar Ge dots grown on Si.

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