Novel Process for Ceramic Epitaxy Using Laser Mbe

1990 ◽  
Vol 201 ◽  
Author(s):  
Mamoru Yoshimoto ◽  
Hirotoshi Nagata ◽  
Tadashi Tsukahara ◽  
Satoshi Gonda ◽  
Hideomi Koinuma
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Xps Analysis ◽  
Heteroepitaxial Growth ◽  
Ceramic Thin Films ◽  
Depth Analysis ◽  
Band Profile ◽  
Arf Excimer Laser ◽  
Laser Mbe

AbstractAn ArF excimer laser MBE system specially designed for the deposition of ceramic thin films was used to construct atomi-cally defined epitaxial SrCuO2−x films. According to XPS analysis, Cu valence was evaluated to be 2+ in the film as-grown in the presence of 10−7 Torr NO2, but it was less than 2+ in the film prepared in the presence of 10−7Torr 02. In situ XPS depth analysis of as-grown SrCuO2−x film on SrTiO3 substrate revealed the band profile at the interface of the film and substarte. Ceramic superlattices composed of metallic SrCuO2−x (3∼8nm thick) and insulative SrTiO3 (8nm thick) were prepared by sequential heteroepitaxial growth.

scholarly journals Formation of Ceramic Thin Films by ArF Excimer Laser Ablation.

1999 ◽  
Vol 65 (11) ◽  
pp. 1589-1593
Author(s):  
Takashi MORINO ◽  
Hayato ONODERA ◽  
Yoshimi TAKAHASHI ◽  
Masayuki IKEDA
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Ceramic Thin Films ◽  
Arf Excimer Laser

scholarly journals In-Situ Diagnostics at High Pressures: Ellipsometric and Rheed Studies of the Growth of Yba2Cu3O7

1997 ◽  
Vol 502 ◽  
Author(s):  
Dave H. A. Blank ◽  
Horst Rogalla
Keyword(s):  
Thin Films ◽  
High Pressures ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
High Energy ◽  
Diagnostic Tools ◽  
Heteroepitaxial Growth ◽  
Deposition Parameters

ABSTRACTPulsed Laser and Sputter Deposition are used for the fabrication of complex oxide thin films at relatively high oxygen pressures (up to 0.5 mBar). This high pressure hampers the application of a number of in-situ diagnostic tools. One of the exceptions is ellipsometry. Using this technique we studied in-situ the growth of off-axis sputtered Yba2Cu3O6+x thin films on (001) SrTiO3 as a function of the deposition parameters. Furthermore, the oxidation process from O(6) to O(7) has been studied by performing spectroscopic ellipsometry during isobaric cooling procedures.Another suitable in-situ monitoring technique for the growth of thin films is Reflection High Energy Electron Diffraction (RHEED). In general this is a (high) vacuum technique. Here, we present an RHEED-system in which we can observe clear diffraction patterns up to a deposition pressure of 0.5 mBar. The system has been used for in-situ monitoring of the heteroepitaxial growth of YBa2Cu3 06+x on SrTiO3 by pulsed laser deposition.

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Heteroepitaxial Growth of $\bf SrBi_{4}Ti_{4}O_{15}/Bi_{2}Sr_{2}CuO_{6+{\ninmbi y}}$ Structure by ArF Excimer Laser Ablation

1995 ◽  
Vol 34 (Part 2, No. 9A) ◽  
pp. L1145-L1147 ◽  
Author(s):  
Minoru Tachiki ◽  
Masahiro Matsutani ◽  
Tatsuhiko Fujii ◽  
Yoshiyuki Sakaguchi ◽  
Takeshi Kobayashi
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Heteroepitaxial Growth ◽  
Excimer Laser Ablation ◽  
Arf Excimer Laser

In situ XPS analysis of the electronic structure of silicon and titanium thin films exposed to low-pressure inductively-coupled RF plasma

2021 ◽  
Vol 542 ◽  
pp. 148684
Author(s):  
Jordi Fraxedas ◽  
Max Schütte ◽  
Guillaume Sauthier ◽  
Massimo Tallarida ◽  
Salvador Ferrer ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Low Pressure ◽  
Rf Plasma ◽  
Xps Analysis ◽  
Inductively Coupled ◽  
In Situ Xps ◽  
Titanium Thin Films

Photochemical modification of polytetrafluoroethylene into oleophilic property using an ArF excimer laser

1992 ◽  
Vol 7 (7) ◽  
pp. 1912-1916 ◽  
Author(s):  
M. Okoshi ◽  
M. Murahara ◽  
K. Toyoda
Keyword(s):  
Excimer Laser ◽  
Polymer Surface ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Photochemical Reactions ◽  
Xps Analysis ◽  
Spectrum Measurement ◽  
Arf Excimer Laser ◽  
The Stability ◽  
Photochemical Modification

Photochemical modification of the polytetrafluoroethylene (PTFE) with incorporation of the CH3 radical released from the B(CH3)3 molecule excited by an ArF excimer laser has been demonstrated. The incorporation of CH3 radicals and the depletion of fluorine atoms of the polymer surface were studied by XPS analysis and infrared ATR spectrum measurement. In these photochemical reactions, the photoirradiated surface changed into oleophilic. The properties were studied by contact angle measurement. The stability of the oleophilic surface was examined at the elevated temperature of 200 °C for 6 h in O2 or N2 ambient and also by immersing in alkaline or acid water solutions.

Growth of Silicon Films Onto Fluororesin Surface by ArF Excimer Laser

1993 ◽  
Vol 334 ◽  
Author(s):  
T. Miyokawa ◽  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Surface Roughness ◽  
Surface Modification ◽  
Excimer Laser ◽  
High Density ◽  
Silicon Films ◽  
Chemical Compositions ◽  
Xps Analysis ◽  
Modification Process ◽  
Arf Excimer Laser ◽  
Mixed Gases

AbstractSilicon films were deposited on a fluororesin surface. The process was divided into two steps: surface modification process and silicon CVD onto the modified parts. In the modification process, SiH4 and B(CH3)3 mixed gases were used with ArF excimer laser. Fluorine atoms of the surface were pulled out by boron atoms which were photo—dissociated from B(CH3)3 and were replaced with silicon atoms released from SiH4. In the CVD process, SiH4 gas was used with high—density excited ArF excimer laser. Silicon films were deposited onto the nuclei by photodecomposition of SiH4.Chemical compositions of the modified layers and the deposited parts were inspected by XPS analysis. 1000 Å thickness of the deposited silicon films was confirmed by the surface roughness interference–meter.

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