Properties of Pt/Ti Contacts to III-V Materials

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Katz ◽  
S. Nakahara ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Microstructure Evolution ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electron Beam Evaporation ◽  
Semiconductor Materials ◽  
Processing Conditions ◽  
Ternary Semiconductor ◽  
P Type

ABSTRACTPt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.

Electrical properties of aluminum oxide ceramics film on a metal

2021 ◽  
Vol 2 ◽  
pp. 59-65
Author(s):  
I. Yu. Bakeev ◽  
◽  
Yu. A. Burachevsky ◽  
E. S. Dvilis ◽  
D. B. Zolotukhin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Relative Dielectric Constant ◽  
Plasma Electron ◽  
Electron Beam Evaporation ◽  
Original Method ◽  
Alumina Powder ◽  
Oxide Ceramic ◽  
Temperature Dependences

The work is devoted to the study of electrical properties (temperature dependences of conductivity, relative dielectric constant, dielectric loss tangent for various frequencies) of an aluminum oxide ceramic film deposited on a metal substrate. The film was created by the original method of electron beam evaporation of a non-conductive target, consisting of a compressed alumina powder, using a plasma electron source, which is able to reliably operate in the fore-vacuum pressure range (5 – 100 Pa). Such increased working gas pressures ensures the generation of a dense beam plasma near the target, which neutralizes the charging of a non-conducting target and thereby provides its effective melting and electron beam evaporation.

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

1992 ◽  
Vol 19 (1-4) ◽  
pp. 657-660
Author(s):  
M. Severi ◽  
G. Mattei ◽  
L. Dori ◽  
P. Maccagnani ◽  
G.L. Baldini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Sio2 Films

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

1992 ◽  
Vol 260 ◽  
Author(s):  
Eric R. White ◽  
S. Ashok ◽  
D. L. Allara
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Metal Contacts ◽  
Red Phosphorus ◽  
Vapor Source ◽  
Junction Formation ◽  
Dopant Atoms ◽  
Cv Measurements ◽  
P Type ◽  
Vapor Treatment

ABSTRACTn+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

1998 ◽  
Vol 510 ◽  
Author(s):  
D.Z. Chi ◽  
S. Ashok ◽  
D. Theodore
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Thermal Evolution ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Thermal Signature ◽  
P Type ◽  
Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

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