The effect of back contact and rapid thermal processing conditions on flexible CdTe device performance

2015 ◽  
Author(s):  
H. P. Mahabaduge ◽  
D. M. Meysing ◽  
W. L. Rance ◽  
J. M. Burst ◽  
M. O. Reese ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Back Contact ◽  
Processing Conditions

Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

1995 ◽  
Vol 387 ◽  
Author(s):  
K. Mahfoud ◽  
B. Hartiti ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Processing ◽  
Thermal Cycle ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Local Motion ◽  
Minority Carrier Diffusion Length ◽  
Device Processing ◽  
Large Enhancement

AbstractLocal motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.

Shallow Silicided Junctions for VLSI Cmos Transistors by Furnace and Rapid Thermal Processing

1986 ◽  
Vol 71 ◽  
Author(s):  
A.L. Butler ◽  
D.J. Foster ◽  
A.J. Pickering
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Optimum Conditions ◽  
Furnace Annealing ◽  
Boron Fluoride ◽  
Device Scaling ◽  
Diffusion Effects ◽  
Silicon Implantation ◽  
Better Than

AbstractAs a result of device scaling very shallow low resistance diffusions are required for VLSI CMOS fabrication. This paper describes a technique for their formation using silicon implantation for preamorphisation, counterdoping arsenic implantation and overall boron fluoride implantation for the sources and drains of the n- and p-channel transistors. Platinum silicidation has been used to reduce diffusion and polysilicon sheet resistances to 8Q/square. Activation of the shallow diffusions has been achieved either by furnace annealing (FA) or rapid thermal annealing (RTA) in the range 900°C to 1100 °C. Materials results are discussed including TTEM, SIMS and SR profiling. The suitability of the technique for VLSI CMOS applications is demonstrated by the fabrication of sub-micron transistors. With larger wafer diameters (>5') the FA conditions considered are not practicable owing to ramped diffusion effects which lead to deeper junctions. Hence RTA is necessary: optimum conditions found were 1100 °C for 10 seconds when device performance equivalent to or better than FA can be achieved.

Temperature Uniformity Optimization Using Three-Zone Lamp and Dynamic Control in Rapid Thermal Multiprocessor

1991 ◽  
Vol 224 ◽  
Author(s):  
Pushkar P. Apte ◽  
Samuel Wood ◽  
Len Booth ◽  
Krishna C. Saraswat ◽  
Mehrdad M. Moslehi
Keyword(s):  
Thermal Processing ◽  
Dynamic Control ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Processing Conditions ◽  
Temperature Uniformity ◽  
Throughput Rate ◽  
Precise Control ◽  
Lamp System

AbstractRapid thermal processing (RTP) can play an important role in in situ single-wafer thermal multiprocessing, since it allows for a rapid wafer throughput rate. Conventional dedicated RTP equipment, where temperature uniformity is achieved by optimized reflector and chamber geometries for a specific process, typically cannot provide uniformity for different processes, or for a range of processing conditions. In this work we present a new flexible lamp system, in which tungsten-halogen lamps are configured in three concentric rings that are independently and dynamically controlled. The resultant circularly symmetric flux, which can be varied and controlled both temporally and spatially, offers significantly improved temperature uniformity. This is demonstrated using thermocouples as well as actual processes such as implant annealing, thermal oxidation and chemical vapor deposition of silicon. Through added flexibility and more precise control, this approach offers a powerful tool for multiprocessing and rapid process prototyping.

Properties of Pt/Ti Contacts to III-V Materials

1990 ◽  
Vol 216 ◽  
Author(s):  
A. Katz ◽  
S. Nakahara ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Microstructure Evolution ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electron Beam Evaporation ◽  
Semiconductor Materials ◽  
Processing Conditions ◽  
Ternary Semiconductor ◽  
P Type

ABSTRACTPt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.

Enhanced diffusion and improved device performance using dual spectral source rapid thermal processing

1997 ◽  
Vol 26 (12) ◽  
pp. 1422-1427 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
J. Mejia ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Enhanced Diffusion

Rapid Thermal Processing of Thin Film Electroluminescent Display Materials

1988 ◽  
Vol 100 ◽  
Author(s):  
D. M. Kim ◽  
F. Qian ◽  
R. Solanki ◽  
R. T. Tuenge ◽  
C. N. King
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Processing Conditions ◽  
Furnace Annealing ◽  
Fatigue Effect

ABSTRACTRapid thermal annealing of the electroluminescent phosphors ZnS:Mn, SrS:CeF3 and ZnS:SmCl3 has been examined as a function of annealing temperature (500–750°C) and time of exposure (10–120 sec.). The resulting brightness and efficiency of luminescence are correlated with the different processing conditions used. The results indicate that the brightness can be significantly improved from the value obtained with furnace annealing without causing film delamination, blistering or fatigue effect.

Detecting the 10 Angstroms That Change MEMS Performance

2004 ◽  
Author(s):  
Erika Schutte ◽  
Jack Martin
Keyword(s):  
Thin Films ◽  
Device Performance ◽  
Processing Conditions ◽  
Packaging Process ◽  
Mems Sensor ◽  
Process Characterization ◽  
Measurement Protocol ◽  
Mems Device

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.

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