Polynorbornene for Low K Interconnection

1997 ◽  
Vol 476 ◽  
Author(s):  
N. R. Grove ◽  
P. A. Kohl ◽  
S. A. Bidstrup-Allen ◽  
R. A. Shick ◽  
B. L. Goodall ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Moisture Absorption ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
High Glass Transition Temperature ◽  
Low Dielectric ◽  
Microelectronics Industry

AbstractWithin the microelectronics industry, there is an ongoing trend toward miniaturization coupled with higher performance. The scaling of transitors toward smaller dimensions, higher speeds, and lower power has resulted in an urgent need for low dielectric constant interlevel insulators. Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SLA Roadmap. Thus, there exists a need in the microelectronics industry for a thermally stable, noncorrosive low dielectric constant polymer with good solvent resistance, high glass transition temperature, good mechanical performance and good adhesive properties, particularly to copper. In addition, the desired dielectric material should be capable of being processed in environmentally friendly solvents, and the final thermal and electrical performance should not be affected by manufacturing or post environmental conditions. High glass transition temperature polynorbornenes are being developed which provide many of these desired features. This polymer family is produced via a new transition metal catalyzed polymerization. Attributes which make polynorbornene particularly attractive in microelectronics include: (i) excellent thermal performance, (ii) adhesion to conductors without the use of adhesion promoters or barrier layers, (iii) very low moisture absorption (< 0.1 wt %), and (iv) low dielectric constant (2.2 – 2.6). Side groups which have been added to the polynorbornene backbone improve adhesion, dielectric properties and mechanical properties.

Design of low dielectric constant polybenzoxazine nanocomposite using mesoporous mullite

2016 ◽  
Vol 29 (2) ◽  
pp. 141-150 ◽  
Author(s):  
K Ilango ◽  
P Prabunathan ◽  
E Satheeshkumar ◽  
P Manohar
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Thermal Studies ◽  
Microscopic Analysis ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Porous Morphology

In this present work, porous mullites (PM0–5) were synthesized through a template-assisted method using various weight percentages of pluronic (P-123). PM5 obtained using 10 wt% of P-123 was found to show maximum porosity (3.8 Å) and low dielectric constant value (2.4). PM5 was functionalized using glycidyl-terminated silane and denoted as FPM and various weight percentages of FPM were reinforced with polybenzoxazine (PBZ) matrix in order to develop FPM/PBZ nanocomposites. The thermal studies indicate that 1.5 wt% of FPM/PBZ nanocomposite showed improved thermal stability with 34% char yield at 800°C and 162°C as glass transition temperature. It also exhibits low dielectric constant (2.6) than that of the neat PBZ matrix and other FPM/PBZ nanocomposites. The microscopic analysis confirms the homogenous dispersion of FPM into the PBZ polymer that has a porous morphology. The results suggest that the as-synthesized mesoporous mullite with low dielectric constant ( k), synthesized via template-assisted method can be used as a reinforcement to decrease the dielectric constant of polymeric material, which is of industrial significance.

Bismaleimide/Allylnadic-Imide Blends Yield Low Dielectric Constant And Low Water Uptake

1991 ◽  
Vol 227 ◽  
Author(s):  
J-PH Ansermet ◽  
A. Kramer
Keyword(s):  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Dielectric Properties ◽  
Water Uptake ◽  
Water Saturation ◽  
Low Dielectric Constant ◽  
Aliphatic Chain ◽  
Bismaleimide Resin ◽  
Low Dielectric

ABSTRACTThe bismaleimide resin Matrimid 5292A (I) was cocured with an allylnadic-imide resin (EP 433) which contained a long aliphatic chain as backbone (II). Water uptake, swelling, and the dielectric properties (up to 300 MHz) were studied in cast plates. The dielectric constant varied from 5.4 in (I) to 3.2 in (II) at water saturation, compared to 3.1 in (I) to 2.7 in (II) in the dry state. The glass transition temperature stayed above 200 °C at less than 80 mol% of (II).

High-temperature carbon plastics based on thermoreactive polyimide binder

2020 ◽  
pp. 89-102
Author(s):  
M. I. Valueva ◽  
I. V. Zelenina ◽  
M. A. Zharinov ◽  
M. A. Khaskov
Keyword(s):  
Glass Transition ◽  
High Temperature ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Strength Properties ◽  
High Glass Transition Temperature ◽  
Reinforced Plastics ◽  
Carbon Plastics ◽  
Fundamental Possibility ◽  
Fiber Reinforced Plastics

The article presents results of studies of experimental carbon plastics based on thermosetting PMRpolyimide binder. Сarbon fiber reinforced plastics (CFRPs) are made from prepregs prepared by melt and mortar technologies, so the rheological properties of the polyimide binder were investigated. The heat resistance of carbon plastics was researched and its elastic-strength characteristics were determined at temperatures up to 320°С. The fundamental possibility of manufacturing carbon fiber from prepregs based on polyimide binder, obtained both by melt and mortar technologies, is shown. CFRPs made from two types of prepregs have a high glass transition temperature: 364°C (melt) and 367°C (solution), with this temperature remaining at the 97% level after boiling, and also at approximately the same (86–97%) level of conservation of elastic strength properties at temperature 300°С.

scholarly journals Cure Kinetics Modeling of a High Glass Transition Temperature Epoxy Molding Compound (EMC) Based on Inline Dielectric Analysis

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1734
Author(s):  
Erick Franieck ◽  
Martin Fleischmann ◽  
Ole Hölck ◽  
Larysa Kutuzova ◽  
Andreas Kandelbauer
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Kinetic Parameters ◽  
Measurement Techniques ◽  
Process Conditions ◽  
Dielectric Analysis ◽  
High Glass Transition Temperature ◽  
General Process ◽  
Molding Compound

We report on the cure characterization, based on inline monitoring of the dielectric parameters, of a commercially available epoxy phenol resin molding compound with a high glass transition temperature (>195 °C), which is suitable for the direct packaging of electronic components. The resin was cured under isothermal temperatures close to general process conditions (165–185 °C). The material conversion was determined by measuring the ion viscosity. The change of the ion viscosity as a function of time and temperature was used to characterize the cross-linking behavior, following two separate approaches (model based and isoconversional). The determined kinetic parameters are in good agreement with those reported in the literature for EMCs and lead to accurate cure predictions under process-near conditions. Furthermore, the kinetic models based on dielectric analysis (DEA) were compared with standard offline differential scanning calorimetry (DSC) models, which were based on dynamic measurements. Many of the determined kinetic parameters had similar values for the different approaches. Major deviations were found for the parameters linked to the end of the reaction where vitrification phenomena occur under process-related conditions. The glass transition temperature of the inline molded parts was determined via thermomechanical analysis (TMA) to confirm the vitrification effect. The similarities and differences between the resulting kinetics models of the two different measurement techniques are presented and it is shown how dielectric analysis can be of high relevance for the characterization of the curing reaction under conditions close to series production.

High glass transition temperature syndioregic second-order non-linear optical polymer in Langmuir–Blodgett–Kuhn films

1998 ◽  
Vol 327-329 ◽  
pp. 5-8 ◽  
Author(s):  
M.J. Roberts ◽  
G.A. Lindsay ◽  
J.D. Stenger-Smith ◽  
R.A. Hollins ◽  
A.P. Chafin ◽  
...  
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Second Order ◽  
High Glass Transition Temperature ◽  
Langmuir Blodgett ◽  
Optical Polymer ◽  
Non Linear ◽  
Linear Optical

Imide Oligomers Containing Pendent and Terminal Phenylethynyl Groups—II

1998 ◽  
Vol 10 (3) ◽  
pp. 273-283 ◽  
Author(s):  
J W Connell ◽  
J G Smith ◽  
P M Hergenrother
Keyword(s):  
Molecular Weight ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Average Molecular Weight ◽  
Adhesive Tape ◽  
High Glass Transition Temperature ◽  
Compressive Properties ◽  
Compression Moulding ◽  
Imide Oligomers

As part of a programme to develop high-performance/high-temperature structural resins for aeronautical applications, imide oligomers containing pendent and terminal phenylethynyl groups were prepared, characterized and the cured resins evaluated as composite matrices. The oligomers were prepared at a calculated number-average molecular weight of 5000 g mol−1 and contained 15–20 mol% pendent phenylethynyl groups. In previous work, an oligomer containing pendent and terminal phenylethynyl groups exhibited a high glass transition temperature (∼313 °C), and laminates therefrom exhibited high compressive properties, but processability, fracture toughness, microcrack resistance and damage tolerance were less than desired. In an attempt to improve these deficiencies, modifications in the oligomeric backbone involving the incorporation of 1,3-bis(3-aminophenoxy)benzene were investigated as a means of improving processability and toughness without detracting from the high glass transition temperature and high compressive properties. The amide acid oligomeric solutions were prepared in N-methyl-2-pyrrolidinone and were subsequently processed into imide powder, thin films, adhesive tape and carbon fibre prepreg. Neat resin plaques were fabricated from imide powder by compression moulding. The maximum processing pressure was 1.4 MPa and the cure temperature ranged from 350 to 371 °C for 1 h for the mouldings, adhesives, films and composites. The properties of the 1,3-bis(3-aminophenoxy)benzene modified cured imide oligomers containing pendent and terminal phenylethynyl groups are compared with those of previously prepared oligomers containing pendent and terminal phenylethynyl groups of similar composition and molecular weight.

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric

1997 ◽  
Vol 476 ◽  
Author(s):  
P. H. Townsend ◽  
S. J. Martin ◽  
J. Godschalx ◽  
D. R. Romer ◽  
D. W. Smith ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Polymer Network ◽  
Flow Characteristics ◽  
Interlayer Dielectric

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.

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