Molecular Dynamics Studies of Impurity Segregation and Trapping.
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ABSTRACTThe ability to make highly doped δ-layers in semiconductors depends on the rate of interchange of atoms between layers at the crystal surface. We have simulated molecular beam epitaxy on a silicon (100) surface covered with a monolayer of impurity atoms. The kinetics of impurity segregation to the surface was examined for various growth conditions and segregation energies. We find that segregation is facilitated by appreciable inter-layer diffusion of atoms in the top several layers. The amount of diffusion is much greater during deposition than it is when the beam is off.
2021 ◽
Vol 15
(4)
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pp. 683-695
2005 ◽
Vol 23
(4)
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pp. 1814
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2012 ◽
Vol 132
(2)
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pp. 289-292
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