Ferroelectric Thin Films on Silicon and Fused Silica Substrates by Sol-Gel Process

1990 ◽  
Vol 200 ◽  
Author(s):  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Fused Silica ◽  
Ferroelectric Thin Films ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Sol Gel Process ◽  
Silica Substrates

ABSTRACTFerroelectric thin films including undoped and doped PZT (lead zirconate titanate), BaTiO3 (barium titanate), SBN (strontium barium niobate), KNbO3 (potassium niobate), PBN (lead barium niobate), KNSBN (potassium sodium strontium barium niobate), and LiNbO3 (lithium niobate) were made on silicon and fused silica substrates by a sol-gel process. Microstructure and physical (pyroelectric, ferroelectric and optical) properties of these thin films were studied. Transparent and preferentially orientated SBN thin films on fused silica substrates can be obtained by applying a d.c. electric field during heat treatment. A heterojunction effect was observed in ferroelectric thin films on both n-silicon and p-silicon through measurement of I-V characteristics, and by the demonstration of a photocurrent effect.

Electrical Properties of Amorphous Thin Films of Ferroelectric Oxides Prepared by Sol-Gel Technique

1993 ◽  
Vol 310 ◽  
Author(s):  
Yuhuan Xu ◽  
Ren Xu ◽  
Chih-Hsing Cheng ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Amorphous Thin Films ◽  
Crystalline Films ◽  
Gel Technique ◽  
Ferroelectric Oxides

AbstractAmorphous thin films of ferroelectric oxides including lead zirconate titanate (PZT), barium titanate (BaTiO3) and lithium niobate (LiNbO3) on several kinds of substrates were prepared by a sol-gel technique. The heat-treatment temperatures for preparation of amorphous thin films were much lower than those for the corresponding crystalline ferroelectric thin films. Electrical properties of these amorphous thin films were measured and compared with those of corresponding crystalline films. These amorphous thin films exhibited ferroelectric-like behavior. A model of the microstructure of these films is proposed.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

Microstructure Characterization of Ferroelectric Thin Films used in Non-Volatile Memories - Optical and Scanning Electron Microscopy

1990 ◽  
Vol 200 ◽  
Author(s):  
Leo N. Chapin ◽  
Sharon A. Myers
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Fully Integrated ◽  
Ferroelectric Layer ◽  
Scanning Electron

ABSTRACTLead zirconate titanate ferroelectric thin films have been fabricated and fully integrated with standard CMOS semiconductor technology to produce non-volatile IC memory devices, now being tested in the marketplace. Starting with an organo-metallic sol-gel and using standard IC spin-on glass and annealing technologies, perovskite type ferroelectric thin films are formed. A variety of techniques have been under study for characterizing the crystalline microstructumre of the ferroelectric layer. Presented here are observations made with optical and scanning electron microscopy, and X-ray diffraction analysis of the effects of ferroelectric composition and sinter temperatures on crystal structure.

Synthesis of Pb1-xYbx(Zr0.52Ti0.48)O3 Nanopowders by a Modified Sol-Gel Process Using Zirconium Oxynitrate Source

2007 ◽  
Vol 121-123 ◽  
pp. 223-226
Author(s):  
Qiu Sun ◽  
Fu Ping Wang ◽  
Zhao Hua Jiang
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Phase Changes ◽  
Nanocrystalline Powders ◽  
Cation Substitution ◽  
Memory Devices ◽  
Pzt Thin Films

Ferroelectric lead zirconate titanate(PZT)thin films have attracted great attention because of their potential applications in memory devices[1] due to their unique properties, for example, hysteresis loop and high dielectric constant. To realize these memory devices, it is necessary to overcome the reliability problems such as fatigue, retention and imprint. It is well known that lead base perovskite family ferroelectric thin films with donor dopant such as La3+ and Nb5+ have improved the electrical properties of PZT thin films effectively [2-3]. And it is proposed that the cation substitution could reduce the number of defects such as oxygen vacancies, which could promote electrical fatigue and leakage current of PZT ferroelectric thin films obviously. In the present study, rare earth Yb-doped lead zirconium titanate (PYZT) nanocrystalline powders with a composition near the morphotropic phase boundary (Zr/Ti=52/48) were prepared by a modified sol-gel method. DTA/TG and XRD were used to determine the thermal and phase changes in the formation of PYZT crystalline powders. The effect of Yb3+ cation substitution for Pb2+ cation on the microstructure of PZT was developed with XRD. The grain size of PYZT nanopowders is about 40 nm determined by TEM.

Lead Zirconate Titanate Stannate Thin Films for Large Strain Microactuator Applications

1991 ◽  
Vol 243 ◽  
Author(s):  
Keith G. Brooks ◽  
Jiayu Chen ◽  
K.R. Udayakumar ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Phase ◽  
Large Strain ◽  
Sol Gel ◽  
Bias Field ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Phase Switching ◽  
Sol Gel Process

AbstractThin films of antiferroelectric tetragonal (Pb.97 La.02 )(Zr1-x-yTixSny)O3 have been synthesized from acetate and alkoxide precursors via a sol-gel process. A multiple layer spin coating procedure was used to prepare 0.4 gtm films on platinized silicon wafers. Crystallization of the films as confirmed by x-ray diffraction was achieved by rapid thermal annealing at 700°C for 20 seconds. Antiferroelectric to ferroelectric phase switching threshold fields were determined from P-E hysteresis curves. Longitudinal strain is reported as a function of applied electric field, with a maximum strain of 1.6×10-3 measured at an applied dc bias field of 120 kV/cm on a film of composition Pb.97 La.02 (Zr.60Ti.l0Sn.30 )O3. These films show promise for micromechanical actuator applications due to the high strain associated with field forced antiferroelectric to ferroelectric phase switching.

Ferroelectric Thin Films for Microelectromechanical Device Applications

1992 ◽  
Vol 276 ◽  
Author(s):  
D. L. Polla ◽  
W. P. Robbins ◽  
T. Tamagawa ◽  
C. Ye
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Ferroelectric Thin Films ◽  
Zirconate Titanate ◽  
Microelectromechanical Devices ◽  
Device Applications ◽  
Silicon Based

ABSTRACTFerroelectric thin films of the lead zirconate titanate family have been integrated with silicon-based micromachined structures in the fabrication of microelectromechanical devices. Sol-gel deposition techniques have been applied in the formation of ferroelectric thin films with high piezoelectric and pyroelectric coefficients for physical forces sensors and infrared detectors, respectively. Knowledge of both electrical and mechanical properties is important in realizing microelectromechanical devices with predictable performance. This pape reports piezoelectric coefficient, pyroelectric coefficient, dielectric constant, and Young's modulus for lead zirconate titanate and lead titanate thin films.

Preparation and Characterization of Pb(Zr0.52Ti0.48)O3 Powders and Thin Films by a Sol-gel Route

2000 ◽  
Vol 15 (6) ◽  
pp. 1336-1341 ◽  
Author(s):  
Dage Liu ◽  
Hongxi Zhang ◽  
Zhong Wang ◽  
Liancheng Zhao
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Acetate ◽  
Sol Gel ◽  
Precursor Solution ◽  
Lead Zirconate ◽  
Tetrabutyl Titanate ◽  
Sol Gel Process ◽  
High Fatigue

Lead zirconate titanate [Pb(ZrxTi1−x)O3 (PZT)] powders and ferroelectric thin films with a composition near the morphotropic phase boundary [Pb(Zr0.52Ti0.48)O3] were prepared by a modified sol-gel process using zirconium oxynitrate-2-hydrate as the zirconium source and ethylene glycol as solvent. The precursor solution was prepared from lead acetate-3-hydrate, tetrabutyl titanate, and zirconium oxynitrate-2-hydrate. Perovskite PZT powders were obtained after sintering at 450 °C for 2 h. Films rapid-thermally annealed at 650 °C for 1 min formed well-crystallized perovskite.Microstructures of these films indicated the presence of nano-sized grains (∼50 nm). The remnant polarization was 28.5 μC/cm2, and the coercive field was 39.8 kV/cm. Ferroelectric polarization fatigue test of In/PZT/Pt/Ti/SiO2/Si showed a high fatigue resistance up to 3 × 1010 cycles before Pr decreased by 50%.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate
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