An Interface-Sensitive Conversion Electron Mössbauer Spectroscopic Study of the Ion Beam Induced Reactions at Fe-Si Interface.

ABSTRACTThe ion beam induced reactions at Fe-Si interface are studied for the first time using a novel interface-sensitive Mössbauer probe.The samples used in these studies are prepared by depositing a thin layer (<450A°) of enriched Fe57 isotope (95.45% by composition) on a freshly cleaned silicon (111) substrate followed by a deposition of a 150Ao film of natural iron (Fe 57 only 2.2%).These samples are subjected to Xetion bombardment at an incident ion energy of 100 keV and a dose of 6 × 1015 ions/cm2 The technique of Conversion Electron Mössbauer Spectroscopy (CEMS) is used to characterize the formation and growth of different phases as a function of annealing treatment. The spectra are leastsquare fitted using the MOSFIT programme.The MHssbauer lines for as-deposited and ion bombarded samples show a considerable broadening, which is a clear signature of a large concentration of defects formed at the interface due to ion beam induced collision cascades. As the samples are annealed the resonance lines are sharpened indicating recovery of stoichiometrically well-defined phases from an initial defective state. The present study indicates formation of FeSi and Fe3 Si phases after the annealing treatment-RBS measurements are used to confirm the mixing.These results are analyzed in terms of the non-equilibrium features of the directed energy processing of interface.

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Energy dependence of ion beam mixing at Fe-Al and Fe-Cu interface: A conversion electron Mössbauer spectroscopic study

Radiation Effects ◽

10.1080/00337578808225710 ◽

1988 ◽

Vol 106 (4) ◽

pp. 297-309 ◽

Cited By ~ 1

Author(s):

D. M. Phase ◽

Jayashree Patankar ◽

V. N. Kulkarni ◽

S. B. Ogale

Keyword(s):

Spectroscopic Study ◽

Energy Dependence ◽

Conversion Electron ◽

Ion Beam ◽

Ion Beam Mixing

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Formation of Alloy Phases at Fe-Al Interface by Ion Beam Mixing, asRevealed by Interface-Sensitive Conversion Electron Mössbauer Spectroscopic Measurements

MRS Proceedings ◽

10.1557/proc-25-247 ◽

1983 ◽

Vol 25 ◽

Author(s):

V.P. Godbole ◽

V.G. Bhide ◽

S.V. Ghaisas ◽

S.M. Kanetkar ◽

S.M. Chaudhari ◽

...

Keyword(s):

Solid Solution ◽

Conversion Electron ◽

Ion Beam ◽

Least Square ◽

Solid Solution Phase ◽

Heat Treated ◽

Natural Iron ◽

Identical Manner ◽

Different Temperatures ◽

Argon Ion Bombardment

ABSTRACTThe physical processes associated with the formation of various normal as well as metastable phases at an ion beam mixed Fe-Al interface are studied by using a novel interfacesensitive Conversion Electron Mbssbauer Spectroscopic (CEMS) technique.This technique which has been introduced and used for the first time in these investigations, is based on the deposition of a thin (less than 50 A°) layer of enriched Fe 5 7 isotope (95.45% by composition) at the interface between the aluminium substrate and a post-deposited 250A° film of natural iron (only 2.2% of Fe 57), leading to a considerably enhanced spatial selectivity of the M~ssbauer information regarding the reactions occurring at the interface.A number of samples prepared in the manner mentioned above are subjected to an argon ion bombardment at an incident ion energy of 100 keV and a dose of ≃ 2 × 1016 ions/cm2 The ion beam mixed samples are annealed at different temperatures in the range between 300°C to 600°C for twenty minutes, to provide the thermal energy for the growth of different Fex Aly phases at the interface.Conversion Electron Mössbauer Spectroscopy is employed at each stage of the ion beam processing and annealing of the samples, to characterize the phases formed. All the Mbssbauer spectra are least square fitted using the MOSFIT programme to obtain the best-fit values of Mössbauer parameters. The results indicate a substantial broadening of the Mössbauer lines for the as-implanted samples, a fact which can be attributed to the beam induced radiation damage. Subsequent annealing of the samples at different temperatures leads to annealing of damage and further to the formation of Fe3 Al and FeAl solid solution. Mössbauer spectra of the samples annealed at 500°C indicate segregation of Fe at the interface along with the formation of Fe3Al phase, while annealing at 600°C results in the formation of Fe-Al solid solution phase with traces of effectively unreacted metallic Fe. The unimplanted composites heat-treated in an identical manner do not show these features. These results which are supported by RBS measurements, are interpreted and discussed in terms of the non-equilibrium nature of the ion beam processing of the interface.

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Ion‐beam mixing at Fe‐Si interface: An interface‐sensitive conversion electron Mössbauer spectroscopic study

Journal of Applied Physics ◽

10.1063/1.335231 ◽

1985 ◽

Vol 57 (8) ◽

pp. 2915-2920 ◽

Cited By ~ 32

Author(s):

S. B. Ogale ◽

Rekha Joshee ◽

V. P. Godbole ◽

S. M. Kanetkar ◽

V. G. Bhide

Keyword(s):

Spectroscopic Study ◽

Conversion Electron ◽

Ion Beam ◽

Ion Beam Mixing

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Electrochemical corrosion behaviour of ion-beam-mixed Fe-Al alloy: A conversion electron Mössbauer spectroscopic study

Thin Solid Films ◽

10.1016/0040-6090(86)90107-0 ◽

1986 ◽

Vol 136 (1) ◽

pp. 45-55 ◽

Cited By ~ 4

Author(s):

S.M. Kanetkar ◽

Y.S. Dorik ◽

S.M. Chaudhari ◽

S.V. Ghaisas ◽

S.B. Ogale ◽

...

Keyword(s):

Spectroscopic Study ◽

Conversion Electron ◽

Corrosion Behaviour ◽

Ion Beam ◽

Electrochemical Corrosion ◽

Al Alloy ◽

Electrochemical Corrosion Behaviour

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Conversion electron Mössbauer spectroscopic study of ion‐beam mixing at Fe‐Mo interface

Journal of Applied Physics ◽

10.1063/1.336641 ◽

1986 ◽

Vol 59 (2) ◽

pp. 388-394 ◽

Cited By ~ 12

Author(s):

Rekha Joshee ◽

D. M. Phase ◽

S. V. Ghaisas ◽

S. M. Kanetkar ◽

S. B. Ogale ◽

...

Keyword(s):

Spectroscopic Study ◽

Conversion Electron ◽

Ion Beam ◽

Ion Beam Mixing

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Ion‐beam mixing at Fe:metallic‐glass (Fe67Co18B14Si1) interface: A conversion‐electron Mössbauer spectroscopic study

Journal of Applied Physics ◽

10.1063/1.341960 ◽

1988 ◽

Vol 64 (2) ◽

pp. 677-682 ◽

Cited By ~ 1

Author(s):

Y. V. Bhandarkar ◽

S. V. Ghaisas ◽

S. B. Ogale

Keyword(s):

Spectroscopic Study ◽

Conversion Electron ◽

Ion Beam ◽

Ion Beam Mixing

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Carbon Film Deposition On Silicon Using Low Energy Ion Beams

MRS Proceedings ◽

10.1557/proc-223-307 ◽

1991 ◽

Vol 223 ◽

Author(s):

Qin Fuguang ◽

Yao Zhenyu ◽

Ren Zhizhang ◽

S.-T. Lee ◽

I. Bello ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Ion Beam ◽

Carbon Film ◽

Carbon Films ◽

Film Deposition ◽

Ion Energy ◽

Transmission Electron ◽

Higher Temperature ◽

Post Implantation ◽

Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

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Applications of Energy Beams in Material and Device Processing

MRS Proceedings ◽

10.1557/proc-23-25 ◽

1983 ◽

Vol 23 ◽

Author(s):

G.J. Galvin ◽

L.S. Hung ◽

J.W. Mayer ◽

M. Nastasi

Keyword(s):

Ion Beam ◽

High Energy ◽

Ion Beams ◽

Traditional Role ◽

Near Surface ◽

Device Processing ◽

Composition Modification ◽

Directed Energy ◽

Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

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Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

MRS Proceedings ◽

10.1557/proc-438-605 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 2

Author(s):

N. Tsubouchi ◽

Y. Horino ◽

B. Enders ◽

A. Chayahara ◽

A. Kinomura ◽

...

Keyword(s):

Carbon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

High Vacuum ◽

Negative Ions ◽

Low Energy ◽

Ultra High Vacuum ◽

Negative Ion ◽

Nitride Film ◽

Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

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