Domain and Interface Structures of Epitaxial PtSi

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Kawarada ◽  
I. Ohdomari ◽  
S. Horiuchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Domain Boundary ◽  
Intermediate Region ◽  
Si Substrate ◽  
Crystalline Perfection ◽  
Lattice Image ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interface Structures

ABSTRACTThe crystalline perfection of epitaxial PtSi thin films and the microstructure of the PtSi/Si interface have been examined using transmission electron microscopy (TEM), including lattice image techniques. Epitaxial PtSi layers grow with domains which have three different positions on a (111) Si substrate. Inside a domain the crystalline perfection is high, and at the domain boundary no intermediate region has been observed. The undulation of the PtSi/Si interface is larger than that of other epitaxial silicide/Si interfaces. Despite the large undulation, a cross-sectional lattice image shows the epitaxial layer extends to the interface. The interface is abrupt in the epitaxial PtSi/Si system.

Growth Temperature and Oxygen Ambient Dependency of SrTiO3/Si(100) InterfaceStructures

2001 ◽  
Vol 700 ◽  
Author(s):  
Parhat Ahmet ◽  
Takashi Koida ◽  
Mamoru Yoshimoto ◽  
Hideomi Koinuma ◽  
Toyohiro Chikyow
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Temperature ◽  
Interfacial Layer ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interface Structures

AbstractA systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.

Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates

2012 ◽  
Vol 711 ◽  
pp. 242-245 ◽  
Author(s):  
Hiroyuki Handa ◽  
Shun Ito ◽  
Hirokazu Fukidome ◽  
Maki Suemitsu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interface Layer ◽  
Epitaxial Graphene ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Sic Film

By conducting a heteroepitaxy of a 3C-SiC film on a Si substrate and by annealing its surface in a UHV ambient, epitaxial graphene can be formed on such 3C-SiC virtual substrates. While the growth on the Si-terminated 3C-SiC(111)/Si (111) surface is known to proceed in a similar manner as on the Si-terminated 6H-SiC(0001) surface, successful growth of graphene on 3C-SiC(100)/Si (100) and 3C-SiC(110)/Si (110) surfaces remains puzzling. We have carried out detailed cross-sectional transmission-electron-microscopy observations on these systems to find out that (111)-facets may play crucial roles in the initiation of graphene on these surfaces. This observation also accounts for the absence of the interface layer at the graphene/SiC in these orientations.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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