Phosphorus Gettering by Rapid Thermal Processing

1992 ◽  
Vol 262 ◽  
Author(s):  
Ecuchaib Hartiti ◽  
Abdelilah Slaoui ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Thermal Processing ◽  
Carrier Transport ◽  
Diffusion Length ◽  
Rapid Thermal Processing ◽  
Time Duration ◽  
Silicon Devices ◽  
Coated Film ◽  
Electron Diffusion Length ◽  
Rapid Thermal Diffusion ◽  
P Type

ABSTRACTWe have investigated the rapid thermal diffusion of phosphorus into p-type silicon from a spin-on coated film as a function of the process temperature and time duration. The electron diffusion length LD measurements performed by the Surface PhotoVoltage (SPV) method present evidence for a get-tering phenomena since the LD values of the diffused samples are significantly improved. This result is important for the future of RTP in the area of silicon devices where carrier transport is controlled by the bulk lifetime.

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

2018 ◽  
Vol 123 (23) ◽  
pp. 235104 ◽  
Author(s):  
Jonathan Lee ◽  
Chris J. Fredricksen ◽  
Elena Flitsiyan ◽  
Robert E. Peale ◽  
Leonid Chernyak ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

scholarly journals Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

2000 ◽  
Vol 77 (6) ◽  
pp. 875-877 ◽  
Author(s):  
Leonid Chernyak ◽  
Andrei Osinsky ◽  
Vladimir Fuflyigin ◽  
E. F. Schubert
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type

Influence of Oxygen on Rapid Thermal Co-Diffusion of Phosphorus and Aluminium in Silicon

1995 ◽  
Vol 387 ◽  
Author(s):  
K. Mahfoud ◽  
B. Hartiti ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Processing ◽  
Thermal Cycle ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Rapid Thermal Processing ◽  
Device Performance ◽  
Local Motion ◽  
Minority Carrier Diffusion Length ◽  
Device Processing ◽  
Large Enhancement

AbstractLocal motion, diffusion and interaction of impurities in solids are important aspects of semiconductor material and device processing. Rapid thermal processing (RTP) is extremely concerned and appears to offer significant advantages in these areas. As oxygen is one of the dominant impurities present in silicon, various applications require different level of oxygen to improve the device performance.In this work, we have taken the advantage of this feature to study the effects of the oxygen concentration in silicon on the rapid thermal co-diffusion of phosphorus and aluminium. In particular, we will show that the large enhancement of the minority carrier diffusion length (LD) due to this process can be related to the presence of oxygen and carbon which influences during the thermal cycle are of importance.

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

1992 ◽  
Vol 260 ◽  
Author(s):  
Eric R. White ◽  
S. Ashok ◽  
D. L. Allara
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Metal Contacts ◽  
Red Phosphorus ◽  
Vapor Source ◽  
Junction Formation ◽  
Dopant Atoms ◽  
Cv Measurements ◽  
P Type ◽  
Vapor Treatment

ABSTRACTn+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

1998 ◽  
Vol 510 ◽  
Author(s):  
D.Z. Chi ◽  
S. Ashok ◽  
D. Theodore
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Thermal Evolution ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Thermal Signature ◽  
P Type ◽  
Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

2016 ◽  
Vol 45 (11) ◽  
pp. 5621-5625 ◽  
Author(s):  
Y. Kouhlane ◽  
D. Bouhafs ◽  
N. Khelifati ◽  
S. Belhousse ◽  
H. Menari ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Carrier Lifetime ◽  
Rapid Thermal Processing ◽  
Type Silicon ◽  
P Type

Redistribution of Dopant and Impurity Concentrations During the Formation of Uniform Wsi2 Films by RTP

1988 ◽  
Vol 100 ◽  
Author(s):  
Michael P. Siegal ◽  
Jorge J. Santiago
Keyword(s):  
Thermal Processing ◽  
Dopant Concentration ◽  
High Vacuum ◽  
Rapid Thermal Processing ◽  
Si Substrate ◽  
Time Intervals ◽  
Boron Dopant ◽  
P Type ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy has been used to study the effects of rapid thermal processing on the formation of tetragonal tungsten disilicide thin films on Si(100), p-type 5 Omaga;, cm wafers. The substrates were chemically etched, followed by an RF sputter depostion of 710Å W metal. The samples were then fast radiatively processed in an RTP system for time intervals ranging from 15 to 45 seconds at high temperature (∼1100°C) under high vacuum.The redistribution of the boron dopant concentration profile is studied and shows that boron moves from the Si-substrate into the growing Wsi2 film, eventually escaping into the vacuum. Oxygen is the major impurity in these samples and its removal from the interface has been shown to improve the quality of the silicide film. Trace quantities of F, Cl, Na, K, C and Cr have also been detected.

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

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