Evidence for Vacancy Clustering in Silicon Implanted Indium Phosphide

1992 ◽  
Vol 268 ◽  
Author(s):  
Peter J. Schultz ◽  
P.J. Simpson ◽  
U.G. Akano ◽  
I.V. Mitchell

ABSTRACTDamage induced in InP wafers by ion implantation has been investigated using Doppler broadening of annihilation radiation from variable-energy positrons (VEP), Rutherford backscattering/channeling (RBS), and room temperature photoluminescence (PL). Si* ions were implanted at 600 keV incident energy to total fluences from 1011 to 1014 ions cm−2. Annealing at room temperature was monitored for ∼100 days, during which both VEP and RBS showed recovery of the crystal toward the pre–implanted condition. RBS measurements of samples annealed at elevated temperatures showed that full restoration of lattice order occurred at 375 K, but VEP data for isochronal annealing up to 720 K showed only a moderate reduction in the vacancy–type defect concentration with a significantly narrower lineshape, consistent with vacancy clustering. PL measurements for MOCVD grown InP layers annealed up to 1100 K after implantation also indicated only moderate defect reduction.

2012 ◽  
Vol 733 ◽  
pp. 236-239 ◽  
Author(s):  
Ivan Procházka ◽  
Jakub Čížek ◽  
Oksana Melikhova ◽  
Wolfgang Anwand ◽  
Gerhard Brauer ◽  
...  

A variable energy slow positron beam was utilised to investigate depth dependent effects of sintering on the tetragonal yttria stabilised zirconia nanopowders. Positron implantation was combined with the determination of Doppler broadened profiles of annihilation radiation. The results are consistent with recent positron lifetime data showing that sintering at elevated temperatures leads to a disappearance of pores and a significant grain growth, which is demonstrated by a strong suppression of positronium formation and a substantial decrease in concentration of open volume defects at triple points, respectively, with increasing sintering temperature. An existence of a subsurface layer of a relatively high content of defects was shown in sintered samples and tentatively attributed to arise from a diffusion of open volume defects from the sample interior toward the surface or from a sintering-induced surface modification.


2011 ◽  
Vol 699 ◽  
pp. 1-37
Author(s):  
Mahuya Chakrabarti ◽  
S. Chattopadhyay ◽  
D. Sanyal ◽  
A. Sarkar ◽  
D. Jana

Positron annihilation technique is a well known technique to characterize the defects in a material. These defects can be identified by positron annihilation lifetime and coincidence Doppler broadening of positron annihilation radiation measurement. In this chapter we report the room temperature positron annihilation lifetime for single crystalline ZnO. From our study it is confirmed that the present crystal contains VZn–hydrogen complexes with low open volumes. Another important nuclear solid technique is the Mossbauer Spectroscopic technique which has been used to probe the local magnetic properties of a solid. Here we have summarized Mossbauer spectroscopic studies on ferrites.


2014 ◽  
Vol 794-796 ◽  
pp. 33-38 ◽  
Author(s):  
Meng Liu ◽  
Jakub Čížek ◽  
Cynthia S.T. Chang ◽  
John Banhart

Early stages of clustering in quenched Al-Mg-Si alloys during natural ageing were studied by positron annihilation lifetime spectroscopy utilizing its unique sensitivity to electron density differences in various atomic defects. Two different positron trapping sites could be identified, one related to a vacancy-type defect, the other to solute clusters. The first trap is deep, i.e. irreversibly traps positrons, the second shallow, from which positrons can escape, which creates the signature of a temperature-dependent positron lifetime. During the first 80 min of NA, the vacancy-related contribution decreases, while the solute clusters increasingly trap positrons, thus reflecting their continuous growth and power to trap positrons. Coincident Doppler broadening spectroscopy of the annihilation radiation shows that the annihilation sites are Si-rich after quenching but contain more Mg after 70 min.


Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.


Author(s):  
G. M. Michal ◽  
T. K. Glasgow ◽  
T. J. Moore

Large additions of B to Fe-Ni alloys can lead to the formation of an amorphous structure, if the alloy is rapidly cooled from the liquid state to room temperature. Isothermal aging of such structures at elevated temperatures causes crystallization to occur. Commonly such crystallization pro ceeds by the nucleation and growth of spherulites which are spherical crystalline bodies of radiating crystal fibers. Spherulite features were found in the present study in a rapidly solidified alloy that was fully crysstalline as-cast. This alloy was part of a program to develop an austenitic steel for elevated temperature applications by strengthening it with TiB2. The alloy contained a relatively large percentage of B, not to induce an amorphous structure, but only as a consequence of trying to obtain a large volume fracture of TiB2 in the completely processed alloy. The observation of spherulitic features in this alloy is described herein. Utilization of the large range of useful magnifications obtainable in a modern TEM, when a suitably thinned foil is available, was a key element in this analysis.


2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.


Alloy Digest ◽  
1981 ◽  
Vol 30 (6) ◽  

Abstract FANSTEEL 85 METAL is a columbium-base alloy characterized by good fabricability at room temperature, good weldability and a good combination of creep strength and oxidation resistance at elevated temperatures. Its applications include missile and rocket components and many other high-temperature parts. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and bend strength as well as creep. It also includes information on low and high temperature performance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Cb-7. Producer or source: Fansteel Metallurgical Corporation. Originally published December 1963, revised June 1981.


Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy

In this Chapter we address the physics of Bose-Einstein condensation and its implications to a driven-dissipative system such as the polariton laser. We discuss the dynamics of exciton-polaritons non-resonantly pumped within a microcavity in the strong coupling regime. It is shown how the stimulated scattering of exciton-polaritons leads to formation of bosonic condensates that may be stable at elevated temperatures, including room temperature.


2021 ◽  
pp. 009524432110203
Author(s):  
Sudhir Bafna

It is often necessary to assess the effect of aging at room temperature over years/decades for hardware containing elastomeric components such as oring seals or shock isolators. In order to determine this effect, accelerated oven aging at elevated temperatures is pursued. When doing so, it is vital that the degradation mechanism still be representative of that prevalent at room temperature. This places an upper limit on the elevated oven temperature, which in turn, increases the dwell time in the oven. As a result, the oven dwell time can run into months, if not years, something that is not realistically feasible due to resource/schedule constraints in industry. Measuring activation energy (Ea) of elastomer aging by test methods such as tensile strength or elongation, compression set, modulus, oxygen consumption, etc. is expensive and time consuming. Use of kinetics of weight loss by ThermoGravimetric Analysis (TGA) using the Ozawa/Flynn/Wall method per ASTM E1641 is an attractive option (especially due to the availability of commercial instrumentation with software to make the required measurements and calculations) and is widely used. There is no fundamental scientific reason why the kinetics of weight loss at elevated temperatures should correlate to the kinetics of loss of mechanical properties over years/decades at room temperature. Ea obtained by high temperature weight loss is almost always significantly higher than that obtained by measurements of mechanical properties or oxygen consumption over extended periods at much lower temperatures. In this paper, data on five different elastomer types (butyl, nitrile, EPDM, polychloroprene and fluorocarbon) are presented to prove that point. Thus, use of Ea determined by weight loss by TGA tends to give unrealistically high values, which in turn, will lead to incorrectly high predictions of storage life at room temperature.


ACS Photonics ◽  
2021 ◽  
Author(s):  
Tomojit Chowdhury ◽  
Kiyoung Jo ◽  
Surendra B. Anantharaman ◽  
Todd H. Brintlinger ◽  
Deep Jariwala ◽  
...  

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