Surface and Reactor Effects on Selective Copper Deposition from Cu(hfac)tmvs

1992 ◽  
Vol 282 ◽  
Author(s):  
John A. T. Norman ◽  
David A. Roberts ◽  
Arthur K. Hochberg
Keyword(s):  
Copper Deposition ◽  
Copper Films ◽  
Selective Deposition ◽  
Liquid Precursor ◽  
Volatile Liquid

ABSTRACTThe selectivity of OMCVD copper films grown at 160°C/500 mTorr from the volatile liquid precursor Cu(hfac)tmvs was evaluated for various commercial 6” wafers patterned with either TiN/SiO2 or TiN/Si3N4. By processing wafers “as received”, only thermal grown SiO2 consistently resisted metallization, allowing copper films up to 1.5μ thick to be grown on TiN. For SiO2, films containing H2O, especially from PECVD, only blanket deposition was observed. However, by a utilizing simple thermal predeposition dehydration some of these SiO2 films were conditioned to give selective deposition.

Laser-Induced Selective Copper Deposition on Polyimides and Semiconductors

1992 ◽  
Vol 282 ◽  
Author(s):  
Seong-Don Hwang ◽  
S. S. Kher ◽  
J. T. Spencer ◽  
P. A. Dowben
Keyword(s):  
Gas Phase ◽  
Copper Chloride ◽  
Copper Deposition ◽  
Copper Films ◽  
Liquid Phase Deposition ◽  
Metal Thin Films ◽  
Selective Area ◽  
Phase Cluster ◽  
Photolytic Decomposition ◽  
Area Deposition

ABSTRACTIt has been demonstrated that copper can be selectively deposited on a variety of substrates including Teflon (polytetrafluroethylene or PTFE), Kapton (polyimide resin), silicon and gallium arsnide from solution by photo-assisted initiated deposition. A copper containing solution was prepared from a mixture of copper(I) chloride (Cu2Ci2) and decaborane (B10H14) in diethyl ether and/or THF (tetrahydrofuran). The copper films were fabricated by ultraviolet photolytic decomposition of copper chloride and polyhedral borane clusters. This liquid phase deposition has a gas-phase cluster analog that also results in copper deposition via pyrolysis. The approach of depositing metal thin films selectively by pholysis from solution is a novel and an underutilized approach to selective area deposition.

ChemInform Abstract: Selective Deposition of Thin Copper Films onto Silicon with Improved Adhesion.

ChemInform ◽  
2001 ◽  
Vol 32 (17) ◽  
pp. no-no
Author(s):  
L. Magagnin ◽  
R. Maboudian ◽  
C. Carraro
Keyword(s):  
Copper Films ◽  
Selective Deposition

scholarly journals Selective deposition of silver and copper films by condensation coefficient modulation

2020 ◽  
Vol 7 (1) ◽  
pp. 143-148 ◽  
Author(s):  
Silvia Varagnolo ◽  
Jaemin Lee ◽  
Houari Amari ◽  
Ross A. Hatton
Keyword(s):  
Metal Removal ◽  
Copper Films ◽  
Condensation Coefficient ◽  
Selective Deposition ◽  
Metal Vapour ◽  
Vapour Condensation

Patterning evaporated silver and copper films without metal removal using extremely thin printed organofluorine films to modulate metal vapour condensation.

Effects of Seeding Layers on Electroless Copper Deposition

1999 ◽  
Vol 564 ◽  
Author(s):  
Kai Yu Liu ◽  
Man Siu Tse ◽  
Wang Ling Goh
Keyword(s):  
Crystal Orientation ◽  
Copper Deposition ◽  
Complexing Agent ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Seeding Layer ◽  
Initial Nucleation ◽  
Electroless Copper ◽  
Key Factor ◽  
Al Metallization

AbstractCopper has been actively pursued as the most promising candidate for replacing the current Al metallization for ULSI interconnection because of its higher electrical conductivity and resistance to electromigration. In this work, we present our experimental results on electroless copper deposition on various seeding layers from a formaldehyde-based solution with EDTA as a complexing agent. For electroless plating, a seeding layer is essential for the initiation of copper deposition. X-ray diffraction analysis revealed a variation in the crystallographic orientation of the electroless deposited copper with different underlying seeding layers. The seeding layer is the key factor affecting copper nucleation and grain growth. The initial nucleation behaviors of electroless copper deposition on palladium and copper seeding layers were investigated. The microstructure of electroless deposited copper blanket films was studied using both SEM and AFM, and the crystallinity was analyzed using XRD. The crystal orientation and surface texture of the electroless deposited copper films could be modified by thermal annealing in vacuum (10E-6 Torr) for 30 min at temperatures ranging from 200°C to 300°C. The ratio of crystal orientation, I(111)/I(200) increased with higher annealing temperature, indicating enhanced growth of the (111) crystal structure.

Mocvd of Copper from the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)

1998 ◽  
Vol 514 ◽  
Author(s):  
H.-K. Shin ◽  
Y.-H. Cho ◽  
D.-J. Yoo ◽  
H.-J. Shin ◽  
E.-S. Lee
Keyword(s):  
Surface Morphology ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Pure Copper ◽  
Copper Films ◽  
Vapor Pressures ◽  
Dynamic Vacuum ◽  
Liquid Precursor ◽  
Temperature Range

ABSTRACTIn an attempt to increase the deposition rate, new Cu (I) compounds, (hfac)Cu(1-pentene)(1) and (hfac)Cu(VTMOS)(2) have been synthesized. These species are chartreuse liquids and exhibit sufficient vapor pressures to allow high transport rates.In order to avoid the premature decomposition of the copper precursors during CVD processes, the 50% of free 1-pentene, and VTMOS was added to the compounds 1 and 2 respectively. These mixtures 1 and 2 were used in this study. Approximately 2gm of precursor was used for each experiment. No premature decomposition of the precursor in the source reservoir was observed during CVD processes. It is a sufficiently important result to expect the use of these mixtures in copper CVD to achieve the reproducible deposition.The copper films using these mixtures were deposited in a hot-wall pyrex reactor at a pressure of approximately 10–2 torr under dynamic vacuum. The films deposited at 100°C, 150°C and 200°C from the mixture 1. Pure copper films were deposited from these species. The resistivities 1.8 ∼ 2.1 μΩcm were obtained in the deposition temperature range. SEM revealed that the surface morphology of the films grown in these depositon temperature range was composed of dense film and grains were well connected. The deposition rate at 200°C was 3,500 Å/min.

Organic Solution Deposition of Copper Seed Layers onto Barrier Metals

2000 ◽  
Vol 612 ◽  
Author(s):  
H. Gu ◽  
R. Fang ◽  
T. J. O'Keefe ◽  
M. J. O'Keefe ◽  
W.-S. Shih ◽  
...  
Keyword(s):  
Thin Films ◽  
Seed Layer ◽  
Copper Deposition ◽  
Copper Films ◽  
Exchange Reactions ◽  
Organic Solution ◽  
Spontaneous Deposition ◽  
Electroless Copper ◽  
Barrier Metal ◽  
Seed Layers

AbstractSpontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated. Based on electrochemically driven cementation exchange reactions, the process was used to produce adherent, selectively deposited copper metal particulate films on blanket and patterned barrier metal thin films on silicon substrates. The organic solution deposited copper films were capable of acting as seed layers for subsequent electrolytic and electroless copper deposition processes using standard plating baths. Electroless and electrolytic copper films from 0.1µm to 1.0µm thick were produced on a variety of samples on which the organic solution copper acted as the initial catalytic seed layer. The feasibility of using organic solution deposited palladium as a seed layer followed by electroless copper deposition has also been demonstrated. In addition, experiments conducted on patterned barrier metal samples with exposed areas of dielectric such as polyimide indicated that no organic solution copper or palladium deposition occurred on the insulating materials.

scholarly journals N-Heterocyclic carbene and thiol micropatterns enable the selective deposition and transfer of copper films

2020 ◽  
Vol 56 (8) ◽  
pp. 1275-1278 ◽  
Author(s):  
Zhe She ◽  
Mina R. Narouz ◽  
Christene A. Smith ◽  
Amy MacLean ◽  
Hans-Peter Loock ◽  
...  
Keyword(s):  
Copper Films ◽  
Selective Deposition ◽  
Micro Structures ◽  
Electrochemical Fabrication

Creating N-heterocyclic carbene and thiol micropatterns for electrochemical fabrication of copper micro-structures.

Initial Stage of Cvd Copper Deposition on Teos Oxide

1995 ◽  
Vol 403 ◽  
Author(s):  
Tue Nguyen ◽  
Shusheng He ◽  
Lawrence J. Charnesky
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fourier Transform Infrared ◽  
Copper Deposition ◽  
Selective Deposition ◽  
Initial Stage

AbstractSelective deposition of copper on metal (such as TiN) versus dielectric (such as oxide) requires understanding of the mechanism of chemical-vapor-deposition copper deposition. This work studies the initial stage of CVD copper deposition with hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (Cu-hfac-tmvs) precursor on tetraethylorthosilicate (TEOS) oxide using Fourier transform infrared spectroscopy (FTIR).

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