Pulsed Laser Deposition of Thin Silicon Nitride Films

1992 ◽  
Vol 285 ◽  
Author(s):  
Xiangqun Xu ◽  
Kanekazu Seki ◽  
Naiqun Chen ◽  
Hideo Okabe ◽  
Joan M. Frye ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Absorption Characteristic ◽  
Silicon Nitride Films ◽  
Ft Ir ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTABSTRACTPulsed laser deposition of compressed Si3N4 powder has been used to grow thin SiNx films on a variety of substrates at substrate temperatures ranging from room temperature to 350°C. Film composition was analyzed by Auger electron spectroscopy. The SiN0.33 films have a band gap of 5.60 eV as measured by UV absorption. The FT-IR spectrum shows an absorption characteristic of Si-N. The Si/N ratio in the deposited films corresponding to various substrate temperatures has also been determined.

EFFECT OF SUBSTRATE TEMPERATURE ON THE GROWTH OF COPPER OXIDE THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE

2018 ◽  
Vol 25 (02) ◽  
pp. 1850053 ◽  
Author(s):  
MUHAMMAD KAIF SHABBIR ◽  
SHAZIA BASHIR ◽  
QAZI SALMAN AHMED ◽  
NAZISH YASEEN ◽  
SOHAIL ABDUL JALIL ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Growth Temperature ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Oxide Thin Films ◽  
Vis Spectroscopy ◽  
Substrate Temperatures ◽  
Deposited Films

The effect of substrate temperature on growth of pulsed laser deposited copper oxide thin films has been investigated by employing Nd: YAG laser (532[Formula: see text]nm, 6[Formula: see text]ns, 10[Formula: see text]Hz) irradiation at a fluence of 8.2[Formula: see text]J/cm2. XRD analysis reveals that copper oxide films deposited at room temperature are amorphous in nature, whereas films deposited at higher substrate temperatures are polycrystalline in nature. SEM and AFM analyses revealed that films deposited at substrate temperatures, ranging from room temperature to 300[Formula: see text]C are comprised of large sized clusters, islands and particulates, whereas uniform films with an appearance of granular morphology and distinct bump formation are grown at higher substrate temperatures of 400[Formula: see text]C and 500[Formula: see text]C. The optical bandgap of deposited films is evaluated by UV-VIS spectroscopy and shows a decreasing trend with increasing substrate temperature. Four point probe analysis reveals that electrical conductivity of the deposited films increases with increase in the substrate temperature, and is maximum for highest growth temperature of 500[Formula: see text]C. It is revealed that growth temperature plays a significant role for structure, texture, optical and electrical behavior of copper oxide thin films. The surface and structural properties of the deposited films are well correlated with their electrical and optical response.

Pulsed Laser Deposition of Piezoelectric Films for Micro-Fluidic Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
W.J. Kim ◽  
J.C. Rife ◽  
J.S. Horwitz ◽  
R.C.Y. Auyeung ◽  
D.B. Chrisey ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Single Phase ◽  
Piezoelectric Materials ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Microchannel Plates ◽  
Acoustic Transducer ◽  
Substrate Temperatures

AbtractThick films of piezoelectric materials have been grown by pulsed laser deposition (PLD) for use in the development of a programmable micro-fluidic controller. ZnO and BaTiO3 (BTO) films were deposited onto various substrates, including Au/Cr coated Si, Pt/Ti coated Si, and Au/Pd coated glass microchannel plates, at substrate temperatures from room temperature to 800 °C in a background pressure of O2 from 3 to 350 mTorr. ZnO films (∼5 µm thick) were single phase and (001) oriented. BTO films, 33 µm thick, on Pt/Ti/Si were single phase and polycrystalline. To fabricate piezoelectric acoustic transducer, an array of 2 × 4 gold electrodes was deposited onto the thick BTO films through a shadow mask by PLD. The transducers were attached to a simple fluidic circuit with a 1.6 × 1.6 mm cross section and used to generate a flow velocity of 1 mm/s at an operating frequency of 50 MHz.

The Effects of High Temperature Annealing and Composition on the Dielectric Properties of Thin Films of BaxSrzTiO3

1997 ◽  
Vol 493 ◽  
Author(s):  
Adriaan C. Carter ◽  
James S. Horwitz ◽  
Douglas B. Chrisey ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Dc Bias ◽  
Deposited Films ◽  
Deposition Conditions

ABSTRACTSingle phase, (100) oriented Ba0.5Sr0.5TiO3 films have been deposited by pulsed laser deposition onto (100) LaAIO3, SrTiO3, MgO substrates. The dielectric properties of these films were measured using interdigitated capacitors as a function of DC bias and temperature at 1 MHz and as a function of DC bias at 1 to 20 GHz at room temperature. Deposited films were annealed over a temperature range of 900 to 1350 C for 1 to 8 hours to observe its effect on dielectric properties. Chemical analysis on films deposited from stoichiometric targets showed the films to be up to 6% deficient in Ba and Sr under typical PLD deposition conditions. Optimal annealing conditions and target stoichiometries for minimizing dielectric loss and maximizing tuning are discussed.

Study of Amorphous MoS2 Films Grown by Pulsed Laser Deposition

1998 ◽  
Vol 52 (9) ◽  
pp. 1160-1164 ◽  
Author(s):  
N. T. McDevitt ◽  
J. E. Bultman ◽  
J. S. Zabinski
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Initial Study ◽  
Amorphous Structure ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Sulfur ◽  
Deposited Films

The amorphous structure of MoS2 lms prepared by pulsed laser deposition (PLD) has been evaluated with the use of Raman and X-ray photoelectron spectroscopy (XPS). The initial study of the room-temperature deposited films indicated a featureless Raman spectrum. On closer examination, however, four weak reproducible bands were observed. There has been some confusion in the literature as to the nature of this spectrum—whether it represents an amorphous MoS3 structure or a mixture of MoS2 and sulfur. Our interpretation of the Raman and XPS data indicates that the laser-deposited films represent a mixture of small domains of MoS2 and amorphous sulfur.

INFLUENCE OF SUBSTRATE TEMPERATURE ON TRANSFORMATION OF PREFERRED ORIENTATIONS IN AlN FILMS

2005 ◽  
Vol 19 (30) ◽  
pp. 1775-1782 ◽  
Author(s):  
HONG-YU LIU ◽  
XUE-MING MA ◽  
WANG-ZHOU SHI
Keyword(s):  
Acoustic Wave ◽  
Substrate Temperature ◽  
Surface Acoustic Wave ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Saw Devices ◽  
Influence Of Substrate ◽  
Substrate Temperatures

Polycrystalline aluminium nitride (AlN) films were deposited on silicon substrates by pulsed laser deposition (PLD) at a substrate temperature in the range room temperature (RT)-800° C . Films grown on Si (111) substrates feature (002) and (110) preferred orientations at substrate temperatures below 400°C and above 600°C, respectively. Films morphology is good enough for surface acoustic wave (SAW) devices. The mechanism for formation and transformation of different preferred orientations in AlN films is discussed.

scholarly journals Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Annealing Conditions ◽  
Vacuum Atmosphere

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser deposition

2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Pulsed Laser ◽  
Laser Deposition
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