Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Y. Ma ◽  
T. YAsuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

Nitrogen-Atom Bonding at SiO2/Si Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 300 ◽  
Author(s):  
Y. Ma ◽  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

Cobalt-Germanium Contacts to n-Type GaAs Electrical and Metallurgical Aspects

1988 ◽  
Vol 144 ◽  
Author(s):  
M. Genut ◽  
M. Eizenberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Properties ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Schottky Barrier Height ◽  
Microstructural Analysis ◽  
Transmission Electron ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe correlation between the microstructure and phase formation, and the electrical properties for the Co/GaAs, Co/Ge/GaAs and Ge/Co/GaAs systems have been studied. The microstructural analysis was carried out by transmission electron microscopy, and the component redistribution was determined by Auger electron spectroscopy. The electrical properties (Schottky barrier height and contact resistivity) were studied by means of current-voltage and capacitance-voltage measurements.

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

1992 ◽  
Vol 19 (1-4) ◽  
pp. 657-660
Author(s):  
M. Severi ◽  
G. Mattei ◽  
L. Dori ◽  
P. Maccagnani ◽  
G.L. Baldini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Sio2 Films

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
I. Khlebnikov ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Electrical Properties ◽  
Effective Charge ◽  
High Frequency ◽  
Breakdown Field ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Thermal Oxide ◽  
Capacitance Voltage

ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

THE OXIDATION AND THE ELECTRICAL PROPERTIES OF Ni–Cr THIN FILM AFTER RAPID THERMAL ANNEALING

2007 ◽  
Vol 21 (26) ◽  
pp. 4561-4574 ◽  
Author(s):  
JIANWU YAN ◽  
JICHENG ZHOU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Electron Spectroscopy ◽  
Thermal Process ◽  
Auger Electron ◽  
Rapid Thermal Process ◽  
X Ray ◽  
Sputtering Power ◽  
Resistance Stability

By controlling the sputtering power, rotational speed of the substrate and sputtering time, Ni – Cr thin films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The homogeneity and oxidation of Ni – Cr thin film has been studied by Auger electron spectroscopy (AES). The structures of Ni – Cr thin films were determined by an X-ray diffractometer (XRD). The oxidation and the resistance stability of the Ni – Cr thin film after rapid thermal process (RTP) have been studied. The relations between TCR and RTP techniques of Ni – Cr thin films were discussed.

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

2010 ◽  
Vol 645-648 ◽  
pp. 689-692 ◽  
Author(s):  
Fernanda Chiarello Stedile ◽  
Silma Alberton Corrêa ◽  
Cláudio Radtke ◽  
Leonardo Miotti ◽  
Israel J.R. Baumvol ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Interfacial Layer ◽  
Dielectric Films ◽  
Thermal Treatments ◽  
X Ray ◽  
Nitrogen Incorporation ◽  
Capacitance Voltage

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

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