Effects of Confinement on Plastic Deformation in Passivated Al Films

1993 ◽  
Vol 309 ◽  
Author(s):  
S.G.H. Anderson ◽  
I.-S. Yeo ◽  
P.S. Ho ◽  
S. Ramaswami ◽  
R. Cheung

AbstractWafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AISiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AISiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.

1993 ◽  
Vol 308 ◽  
Author(s):  
S.G.H. Anderson ◽  
I.-S. Yeo ◽  
P.S. Ho ◽  
S. Ramaswami ◽  
R. Cheung

ABSTRACTWafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AlSiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AlSiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.


1999 ◽  
Vol 594 ◽  
Author(s):  
V. Weihnacht ◽  
W. Brückner

AbstractPlastic deformation in thin Cu films was studied by stress measurements with the wafercurvature technique during thermal cycling and in combination with four-point bending. The results from 0.5 ¼m and 1 ¼m thick Cu films are compared. In thermal cycling experiments, strengthening during cooling and a Bauschinger-like effect during reheating were observed. The stress-strain behavior investigated by four-point bending showed to be asymmetric regarding tension and compression at lower temperatures. These phenomenons are explained by a dislocation arrangement at the film-substrate interface which has formed during a previous thermal cycle.


2004 ◽  
Vol 76 (1-4) ◽  
pp. 219-226 ◽  
Author(s):  
J. Laconte ◽  
F. Iker ◽  
S. Jorez ◽  
N. André ◽  
J. Proost ◽  
...  

1986 ◽  
Vol 1 (6) ◽  
pp. 845-851 ◽  
Author(s):  
M.F. Doerner ◽  
D.S. Gardner ◽  
W.D. Nix

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness.


1985 ◽  
Vol 47 ◽  
Author(s):  
P. H. Townsend ◽  
H. A. Vander Plas

ABSTRACTStress measurement in thin film systems is discussed and applied to Al-2%Cu filns on SiO2/Si substrates during thermal cycling. Plastic deformation obscrved during compressive stress relaxation is correlated with the formation of hillocks on the metal films. The effect of secondary layers of 10%Ti-90%W on the thermo-mcchanical response of Al films is examined.


2021 ◽  
Vol 130 (13) ◽  
pp. 135304
Author(s):  
Zhaoxia Rao ◽  
Sarah Berman ◽  
Peilin Yang ◽  
Diederik Depla ◽  
Eric Chason

1990 ◽  
Vol 195 ◽  
Author(s):  
T.E. Schlesinger ◽  
A. Gavrin ◽  
R.C. Cammarata ◽  
C.-L. Chien

ABSTRACTThe mechanical properties of sputtered Ni-Al2O3 granular thin films were investigated by low load microharaness testing. It was found that the microhardness of these films displayed a percolation threshold at a nickel volume fraction of about 0.6, below which the hardness is greatly enhanced. This behavior is qualitatively similar to the electrical and magnetic properties of these types of films. A percolation threshold in hardness can be understood as due to a change in the mechanism for plastic deformation.


2013 ◽  
Vol 18 (1) ◽  
pp. 235-248 ◽  
Author(s):  
Z. Śloderbach ◽  
J. Pająk

The paper presents an aproximate analytic method for determination of the stored energy of plastic deformation during cold bending of metal tubes at bending machines. Calculations were performed for outer points of the tube layers subjected to tension and compression (the points of maximum strains). The percentage of stored energy related to the plastic strain work was determined and the results were presented in graphs. The influence and importance of the stored energy of plastic deformation on the service life of pipeline bends are discussed.


2009 ◽  
Vol 42 (13) ◽  
pp. 4651-4660 ◽  
Author(s):  
Siddharth Joshi ◽  
Patrick Pingel ◽  
Souren Grigorian ◽  
Tobias Panzner ◽  
Ullrich Pietsch ◽  
...  

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