Thin films stress extraction using micromachined structures and wafer curvature measurements

2004 ◽  
Vol 76 (1-4) ◽  
pp. 219-226 ◽  
Author(s):  
J. Laconte ◽  
F. Iker ◽  
S. Jorez ◽  
N. André ◽  
J. Proost ◽  
...  
Keyword(s):  
Thin Films ◽  
Wafer Curvature ◽  
Curvature Measurements

Effects of Confinement on Plastic Deformation in Passivated AL Films

1993 ◽  
Vol 308 ◽  
Author(s):  
S.G.H. Anderson ◽  
I.-S. Yeo ◽  
P.S. Ho ◽  
S. Ramaswami ◽  
R. Cheung
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Thermal Cycling ◽  
Temperature Behavior ◽  
Weighted Sum ◽  
Wafer Curvature ◽  
Tension And Compression ◽  
Curvature Measurements

ABSTRACTWafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AlSiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AlSiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.

Effects of Confinement on Plastic Deformation in Passivated Al Films

1993 ◽  
Vol 309 ◽  
Author(s):  
S.G.H. Anderson ◽  
I.-S. Yeo ◽  
P.S. Ho ◽  
S. Ramaswami ◽  
R. Cheung
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Thermal Cycling ◽  
Temperature Behavior ◽  
Weighted Sum ◽  
Wafer Curvature ◽  
Tension And Compression ◽  
Curvature Measurements

AbstractWafer curvature measurements of a trilayer (SiO2 / AlSiCu / Si) structure are compared to that predicted by a weighted sum of individual measurements of SiO2 and AISiCu films on Si, and significant differences are found to exist for temperatures above 200°C. A straightforward analysis of the stresses in each layer has been modeled using an extension of a model by Feng et al. which assumes uniform plastic deformation throughout the Al. The modeling results suggest a straightforeward method for determining stresses in deformable thin films that are confined by elastic overlayers. A comparison of the stress-temperature behavior for unpassivated and passivated AISiCu films reveals that the confined films exhibit less plastic deformation and both higher tension and compression during thermal cycling.

Understanding residual stress in thin films: Analyzing wafer curvature measurements for Ag, Cu, Ni, Fe, Ti, and Cr with a kinetic model

2021 ◽  
Vol 130 (13) ◽  
pp. 135304
Author(s):  
Zhaoxia Rao ◽  
Sarah Berman ◽  
Peilin Yang ◽  
Diederik Depla ◽  
Eric Chason
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Kinetic Model ◽  
Wafer Curvature ◽  
Curvature Measurements

Observation of Glass Transition Temperatures in Polymeric Thin Films by Wafer Curvature Measurements

1991 ◽  
Vol 239 ◽  
Author(s):  
P. H. Townsend ◽  
B. S. Huber ◽  
D. S. Wang
Keyword(s):  
Thin Films ◽  
Glass Transition ◽  
Transition Temperature ◽  
Polymer Network ◽  
Cross Linking ◽  
Positional Isomers ◽  
Glass Transition Temperatures ◽  
Thin Coatings ◽  
Polymeric Thin Films ◽  
Curvature Measurements

ABSTRACTWafer bending measurements have been used to study the glass transition temperature, Tg, of thin coatings of polystyrene and polycarbonate on Si wafers. The observed values of Tg agree with DSC and TMA measurements on bulk samples. The evolution of the substrate curvature has been used to examine the behavior of Tg in thin epoxy films and coatings derived from divinylsiloxane bisbenzocyclobutene, mixed stereo and positional isomers of 1, 3-bis(2-bicyclo[4.2.0]octa-1, 3, 5-trien-3-ylethenyl)-1, 1, 3, 3-tetramethyl disitoxane (CAS 117732–87–3). The dependence of the Tg of the epoxide coatings is studied as a function of the cross-linking. The evolution of the Tg in the benzocyclobutene coating is found to be a monotonie function of the level of conversion of the polymer network.

Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature

1991 ◽  
Vol 20 (7) ◽  
pp. 833-837 ◽  
Author(s):  
C. A. Volkert ◽  
E. A. Fitzgerald ◽  
R. Hull ◽  
Y. H. Xie ◽  
Y. J. Mii
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
Wafer Curvature

Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements

2018 ◽  
Vol 20 (43) ◽  
pp. 27350-27360 ◽  
Author(s):  
Yuxi Ma ◽  
Jason D. Nicholas
Keyword(s):  
Electrochemical Properties ◽  
Material Properties ◽  
Current Collector ◽  
Doped Ceria ◽  
Wafer Curvature ◽  
Curvature Measurements ◽  
Exchange Material ◽  
First Time ◽  
Electrochemical Oxygen

This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ, current-collector-free wafer curvature measurements.

Misfit Strain Relief Beyond the Critical Thickness Using Curvature Measurements and in Situ Characterization of the Magneto-Optic Kerr Effect

1994 ◽  
Vol 356 ◽  
Author(s):  
H. E. Inglefield ◽  
G. Bochi ◽  
C. A. Ballentine ◽  
R. C. O’Handley ◽  
C. V. Thompson
Keyword(s):  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Kerr Effect ◽  
Critical Thickness ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Wafer Curvature ◽  
Curvature Measurements ◽  
Magneto Optic

AbstractEpitaxial misfit has been characterized in Ni/Cu/Si (100) as a function of Ni film thickness using wafer curvature measurements. This strain can be related to measurements of magnetic anisotropy made in the deposition system using the magneto-optic Kerr effect. Films were deposited using molecular beam epitaxy (MBE) with varying Ni epilayer thickness between 10 and 1000Å. The change in wafer curvature due to misfit strain was measured using optical interferometry and the strain was calculated using Stoney’s equation. Transmission electron microscopy was used to characterize misfit dislocations at the Ni/Cu interface. It has been determined that misfit strain can have a very strong effect on magnetic anisotropy, particularly in the regime between the critical thickness and complete misfit accommodation, where strain has been found to decrease significantly as a function of film thickness. A critical strain has been determined at which a transition in the direction of magnetization easy axis from perpendicular to the film to in the film plane occurs. This discovery allows the use of Kerr effect measurements to characterize misfit strain in situ.

scholarly journals Determination of Stresses in Incrementally Deposited Films From Wafer-Curvature Measurements

2020 ◽  
Vol 87 (10) ◽  
Author(s):  
Zhaoxia Rao ◽  
Hanxun Jin ◽  
Alison Engwall ◽  
Eric Chason ◽  
Kyung-Suk Kim
Keyword(s):  
Residual Stress ◽  
Finite Thickness ◽  
Deposition Process ◽  
Wafer Curvature ◽  
Curvature Measurement ◽  
Stressed Layer ◽  
Relaxation Stress ◽  
Curvature Measurements ◽  
Deposited Films

Abstract We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses.

Correlation between the wafer curvature and fluorescence of pulsed laser deposited ruby thin films stressed to ∼2 GPa

2019 ◽  
Vol 125 (24) ◽  
pp. 245904
Author(s):  
Eric M. Straley ◽  
Susannah M. Dorfman ◽  
Jason D. Nicholas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Wafer Curvature
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