Si(100) Surface Corrosion by NH4F Studied Using High Spatial Resolution Secondary Electron Imaging in a UHV - STEM

1993 ◽  
Vol 315 ◽  
Author(s):  
Jeff Drucker ◽  
A. Bandari ◽  
V.V. Burrows
1992 ◽  
Vol 295 ◽  
Author(s):  
M. R. Scheinfein ◽  
J. S. Drucker ◽  
J. Liu ◽  
J. K. Weiss ◽  
G. G. Hembree ◽  
...  

AbstractThe secondary electron generation process is studied in an ultra-high vacuum scanning transmission electron microscope using electron coincidence spectroscopy. Production pathways for secondary electrons are determined by analyzing coincidences between secondary electrons and individual excitation events. The ultimate spatial resolution available in scanning electron microscopy is limited by the delocalization of the secondary electron generation process. This delocalization is studied using momentum resolved coincidence electron spectroscopy. The fraction of secondary electrons resulting from localized excitations can explain the high spatial resolution observed in secondary electron microscopy images.


2010 ◽  
Vol 16 (S2) ◽  
pp. 610-611
Author(s):  
H Inada ◽  
D Su ◽  
M Konno ◽  
K Nakamura ◽  
RF Egerton ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


Author(s):  
K. Przybylski ◽  
A. J. Garratt-Reed ◽  
G. J. Yurek

The addition of so-called “reactive” elements such as yttrium to alloys is known to enhance the protective nature of Cr2O3 or Al2O3 scales. However, the mechanism by which this enhancement is achieved remains unclear. An A.E.M. study has been performed of scales grown at 1000°C for 25 hr. in pure O2 on Co-45%Cr implanted at 70 keV with 2x1016 atoms/cm2 of yttrium. In the unoxidized alloys it was calculated that the maximum concentration of Y was 13.9 wt% at a depth of about 17 nm. SIMS results showed that in the scale the yttrium remained near the outer surface.


Author(s):  
D. R. Liu ◽  
D. B. Williams

The secondary electron imaging technique in a scanning electron microscope (SEM) has been used first by Millman et al. in 1987 to distinguish between the superconducting phase and the non-superconducting phase of the YBa2Cu3O7-x superconductors. They observed that, if the sample was cooled down below the transition temperature Tc and imaged with secondary electrons, some regions in the image would show dark contrast whereas others show bright contrast. In general, the contrast variation of a SEM image is the variation of the secondary electron yield over a specimen, which in turn results from the change of topography and conductivity over the specimen. Nevertheless, Millman et al. were able to demonstrate with their experimental results that the dominant contrast mechanism should be the conductivity variation and that the regions of dark contrast were the superconducting phase whereas the regions of bright contrast were the non-superconducting phase, because the latter was a poor conductor and consequently, the charge building-up resulted in high secondary electron emission. This observation has since aroused much interest amoung the people in electron microscopy and high Tc superconductivity. The present paper is the preliminary report of our attempt to carry out the secondary electron imaging of this material in a scanning transmission electron microscope (STEM) rather than in a SEM. The advantage of performing secondary electron imaging in a TEM is obvious that, in a TEM, the spatial resolution is higher and many more complementary techniques, e.g, diffraction contrast imaging, phase contrast imaging, electron diffraction and various microanalysis techniques, are available.


Author(s):  
E. G. Rightor

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.


Author(s):  
Mohan Krishnamurthy ◽  
Jeff S. Drucker ◽  
John A. Venablest

Secondary Electron Imaging (SEI) has become a useful mode of studying surfaces in SEM[1] and STEM[2,3] instruments. Samples have been biassed (b-SEI) to provide increased sensitivity to topographic and thin film deposits in ultra high vacuum (UHV)-SEM[1,4]; but this has not generally been done in previous STEM studies. The recently developed UHV-STEM ( codenamed MIDAS) at ASU has efficient collection of secondary electrons using a 'parallelizer' and full sample preparation system[5]. Here we report in-situ deposition and annealing studies on the Ge/Si(100) epitaxial system, and the observation of surface steps on vicinal Si(100) using b-SEI under UHV conditions in MIDAS.Epitaxial crystal growth has previously been studied using SEM and SAM based experiments [4]. The influence of surface defects such as steps on epitaxial growth requires study with high spatial resolution, which we report for the Ge/Si(100) system. Ge grows on Si(100) in the Stranski-Krastonov growth mode wherein it forms pseudomorphic layers for the first 3-4 ML (critical thickness) and beyond which it clusters into islands[6]. In the present experiment, Ge was deposited onto clean Si(100) substrates misoriented 1° and 5° toward <110>. This was done using a mini MBE Knudsen cell at base pressure ~ 5×10-11 mbar and at typical rates of 0.1ML/min (1ML =0.14nm). Depositions just above the critical thickness were done for substrates kept at room temperature, 375°C and 525°C. The R T deposits were annealed at 375°C and 525°C for various times. Detailed studies were done of the initial stages of clustering into very fine (∼1nm) Ge islands and their subsequent coarsening and facetting with longer anneals. From the particle size distributions as a function of time and temperature, useful film growth parameters have been obtained. Fig. 1 shows a b-SE image of Ge island size distribution for a R T deposit and anneal at 525°C. Fig.2(a) shows the distribution for a deposition at 375°C and Fig.2(b) shows at a higher magnification a large facetted island of Ge. Fig.3 shows a distribution of very fine islands from a 525°C deposition. A strong contrast is obtained from these islands which are at most a few ML thick and mottled structure can be seen in the background between the islands, especially in Fig.2(a) and Fig.3.


Author(s):  
Kosuke Nomura ◽  
Ryutaro Oi ◽  
Takanori Senoh ◽  
Taiichiro Kurita ◽  
Takayuki Hamamoto

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